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NVMFS5113PLWFT1G

Onsemi

NVMFS5113PLWFT1G by Onsemi

NVMFS5113PLWFT1G by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 0.014 ohm RDS(on), and 415A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features a single configuration with built-in diode in a small outline package.

Median Price

$2.704

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,138 parts In-Stock

1+ parts

$4.020

100+ parts

$1.850

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-

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3,138

$4.020

$1.850

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DigiKey

USA . 458 parts In-Stock

1+ parts

$4.020

100+ parts

$1.843

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$1.523

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458

$4.020

$1.843

$1.523

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Verical

USA . 700 parts In-Stock

1+ parts

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$1.387

10k+ parts

$1.313

700

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-

$1.387

$1.313

Rochester

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.110

10k+ parts

$1.050

700

-

$1.240

$1.110

$1.050

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.753

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50

$1.753

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Digiode

USA . 1,181 parts In-Stock

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$2.878

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$2.878

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NAC Semi

USA . 3,000 parts In-Stock

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$3.290

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$3.290

Chip Stock

USA . 2,900 parts In-Stock

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2,900

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Vyrian

USA . 1,637 parts In-Stock

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1,637

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,584 parts In-Stock

1+ parts

$1.370

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4,584

$1.370

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Corohmni

South Africa . 311 parts In-Stock

1+ parts

$1.683

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311

$1.683

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.718

100+ parts

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$1.649

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2,000

$1.718

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$1.649

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Argo Parts USA

USA . 835 parts In-Stock

1+ parts

$1.753

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835

$1.753

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Continental Prestige Electronics

USA . 721 parts In-Stock

1+ parts

$1.753

100+ parts

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$1.718

721

$1.753

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$1.718

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.057

100+ parts

$1.872

1k+ parts

$1.687

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2,500

$2.057

$1.872

$1.687

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Semicontronic

India . 1,388 parts In-Stock

1+ parts

$2.580

100+ parts

$2.516

1k+ parts

$2.503

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1,388

$2.580

$2.516

$2.503

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Ampacity Inc.

Singapore . 1,235 parts In-Stock

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$2.580

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$2.580

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Corphita

USA . 518 parts In-Stock

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$2.727

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518

$2.727

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Microchip USA

USA . 7,302 parts In-Stock

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$9.943

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7,302

$9.943

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Infinite Electronics LLP (Excess)

. 15,007 parts In-Stock

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iodParts Technologies Inc.

India . 8,045 parts In-Stock

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Problanco Electronics

Mexico . 5,197 parts In-Stock

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Kulean Microsystems

USA . 4,109 parts In-Stock

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TANS Electronics

Latvia . 3,510 parts In-Stock

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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SupplyDigital Components

Austria . 441 parts In-Stock

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Overview

Experience unmatched power and efficiency with the NVMFS5113PLWFT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality power field effect transistors designed for a variety of applications. With its P-channel configuration and built-in diode, this transistor offers reliable performance and durability. Whether you're working on automotive electronics, industrial equipment, or consumer electronics, this transistor provides the value and benefits you need for your project. Trust Onsemi to deliver cutting-edge technology that meets your highest standards.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection for the FET, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-Channel FETs are known for their low on-state resistance and high current-carrying capability, making them efficient for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for effective and efficient switching operations, providing protection against reverse voltage and reducing circuit complexity.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle higher voltages, making it suitable for various power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and ease of control, making them ideal for applications where high switching speed and efficiency are required.

Maximum Pulsed Drain Current (IDM): 415 A

High pulsed drain current capability allows this FET to handle large momentary current spikes, ensuring reliable performance in demanding conditions.

Avalanche Energy Rating (EAS): 315 mJ

The high avalanche energy rating indicates the FET's ability to withstand high-energy transients without damage, enhancing overall system robustness.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers low leakage currents, high switching speeds, and excellent thermal stability, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.014 ohm

Low on-resistance minimizes power dissipation and improves efficiency, making this FET suitable for high-current applications where low losses are critical.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality for automotive-grade applications, making this FET a trustworthy choice for automotive power electronics.

Technical Specifications

Power Field Effect Transistors (FET) NVMFS5113PLWFT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

315 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.014 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

415 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NVMFS5113PLWFT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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