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NVMFS5C410NAFT1G

Onsemi

NVMFS5C410NAFT1G by Onsemi

NVMFS5C410NAFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 166W max power dissipation and AEC-Q101 reference standard compliance.

Median Price

$4.280

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,480 parts In-Stock

1+ parts

$4.280

100+ parts

$2.910

1k+ parts

$2.210

10k+ parts

$2.000

1,480

$4.280

$2.910

$2.210

$2.000

DigiKey

USA . 1,438 parts In-Stock

1+ parts

$4.290

100+ parts

$2.914

1k+ parts

$2.590

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1,438

$4.290

$2.914

$2.590

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Future Electronics

Canada . 81,000 parts In-Stock

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$2.040

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$2.040

Distributors (In-Stock)

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Nova Conductors

Japan . 200 parts In-Stock

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$2.698

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200

$2.698

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Digiode

USA . 84 parts In-Stock

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$4.066

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84

$4.066

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NAC Semi

USA . 165,000 parts In-Stock

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$3.270

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$3.270

Flip Electronics

USA . 96,000 parts In-Stock

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Vyrian

USA . 27,742 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.420

100+ parts

$0.382

1k+ parts

$0.344

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3,000

$0.420

$0.382

$0.344

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Aztec Data Supply Inc.

USA . 2,176 parts In-Stock

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$1.420

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2,176

$1.420

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Ampacity Inc.

Singapore . 27,567 parts In-Stock

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$1.730

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$1.730

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Semicontronic

India . 27,555 parts In-Stock

1+ parts

$1.730

100+ parts

$1.687

1k+ parts

$1.678

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27,555

$1.730

$1.687

$1.678

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Corohmni

South Africa . 410 parts In-Stock

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$2.040

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410

$2.040

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Continental Prestige Electronics

USA . 5,471 parts In-Stock

1+ parts

$2.600

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$2.548

5,471

$2.600

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$2.548

Argo Parts USA

USA . 407 parts In-Stock

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$2.600

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$2.600

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Bastille Electronics

Australia . 100 parts In-Stock

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$2.698

100+ parts

$2.563

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$2.435

10k+ parts

$2.401

100

$2.698

$2.563

$2.435

$2.401

Corphita

USA . 1,207 parts In-Stock

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$3.852

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Microchip USA

USA . 3,616 parts In-Stock

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$15.461

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Lixinc

USA . 9,690 parts In-Stock

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TANS Electronics

Latvia . 8,362 parts In-Stock

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Kulean Microsystems

USA . 7,774 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Perfect Parts

USA . 4,893 parts In-Stock

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Problanco Electronics

Mexico . 2,497 parts In-Stock

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SupplyDigital Components

Austria . 1,004 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Overview

Unleash the power of innovation with the NVMFS5C410NAFT1G by Onsemi. Crafted with precision and expertise, this Power Field Effect Transistor offers unmatched performance and reliability. Ideal for a variety of applications, this N-CHANNEL transistor features a built-in diode and operates in enhancement mode for maximum efficiency. With a high breakdown voltage and low on-resistance, this transistor delivers exceptional power handling capabilities. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and empowers your designs to reach new heights. Elevate your projects with the NVMFS5C410NAFT1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high power efficiency, making this FET a suitable option for power management systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient current flow and reliable performance in power circuit designs.

Surface Mount: YES

This FET's surface mount capability enables easy and space-efficient integration onto circuit boards.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this FET offers robust protection against voltage surges in power applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design that helps in space-constrained applications.

Terminal Form: FLAT

The flat terminal form ensures secure connections and ease of soldering during installation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the transistor's conductivity, enhancing overall system performance.

Maximum Pulsed Drain Current (IDM): 900 A

The high pulsed drain current capacity makes this FET ideal for applications requiring power handling capabilities.

Avalanche Energy Rating (EAS): 578 mJ

The high avalanche energy rating ensures reliable performance in harsh voltage spike conditions.

Maximum Drain Current (Abs) (ID): 300 A

The high drain current rating allows for efficient power handling and enables the FET to operate in high current applications.

No. of Terminals: 5

The multiple terminals offer flexibility in circuit design and enable various connectivity options.

Maximum Power Dissipation (Abs): 166 W

The high power dissipation capability ensures efficient heat management, making it suitable for high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the board and allows for higher component density in a circuit design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high-speed switching capabilities and low power consumption, making it an efficient choice for power management systems.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range ensures reliable performance in a variety of environmental conditions.

Transistor Element Material: SILICON

Silicon-based transistor elements offer stability and consistent performance over a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows for reliable operation in cold environments, making it suitable for various temperature conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and ensures reliable electrical connections in the long term.

Maximum Drain Current (ID): 300 A

The high drain current rating allows for efficient power handling and operation in high current applications.

Maximum Drain-Source On Resistance: 0.00092 ohm

The low drain-source on resistance ensures minimal power loss and efficient operation in power circuit applications.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options, enhancing the flexibility of the FET in circuit design.

Case Connection: DRAIN

The drain case connection provides enhanced thermal management and reliable grounding in power circuit applications.

Maximum Time At Peak Reflow Temperature (s): 30

The specified time at peak reflow temperature ensures proper soldering and component reliability during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering during the manufacturing process.

Maximum Feedback Capacitance (Crss): 70 pF

The low feedback capacitance minimizes signal distortion and interference in high-frequency applications.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high-quality performance and reliability for automotive and industrial applications.

Technical Specifications

Power Field Effect Transistors (FET) NVMFS5C410NAFT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

578 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

300 A

Maximum Drain Current (ID):

300 A

Maximum Drain-Source On Resistance:

.00092 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

70 pF

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

900 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NVMFS5C410NAFT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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