Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NVMFS5C410NAFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 166W max power dissipation and AEC-Q101 reference standard compliance.
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The use of plastic/epoxy material offers durability and protection, making it a reliable choice for various applications.
N-channel transistors are known for their high power efficiency, making this FET a suitable option for power management systems.
The built-in diode allows for efficient current flow and reliable performance in power circuit designs.
This FET's surface mount capability enables easy and space-efficient integration onto circuit boards.
With a minimum breakdown voltage of 40V, this FET offers robust protection against voltage surges in power applications.
The rectangular package shape provides a compact design that helps in space-constrained applications.
The flat terminal form ensures secure connections and ease of soldering during installation.
Enhancement mode operation offers precise control over the transistor's conductivity, enhancing overall system performance.
The high pulsed drain current capacity makes this FET ideal for applications requiring power handling capabilities.
The high avalanche energy rating ensures reliable performance in harsh voltage spike conditions.
The high drain current rating allows for efficient power handling and enables the FET to operate in high current applications.
The multiple terminals offer flexibility in circuit design and enable various connectivity options.
The high power dissipation capability ensures efficient heat management, making it suitable for high-power applications.
The small outline package style saves space on the board and allows for higher component density in a circuit design.
MOSFET technology provides high-speed switching capabilities and low power consumption, making it an efficient choice for power management systems.
The high maximum operating temperature range ensures reliable performance in a variety of environmental conditions.
Silicon-based transistor elements offer stability and consistent performance over a wide range of operating conditions.
The low minimum operating temperature allows for reliable operation in cold environments, making it suitable for various temperature conditions.
The matte tin finish provides corrosion resistance and ensures reliable electrical connections in the long term.
The high drain current rating allows for efficient power handling and operation in high current applications.
The low drain-source on resistance ensures minimal power loss and efficient operation in power circuit applications.
The dual terminal position allows for versatile mounting options, enhancing the flexibility of the FET in circuit design.
The drain case connection provides enhanced thermal management and reliable grounding in power circuit applications.
The specified time at peak reflow temperature ensures proper soldering and component reliability during assembly.
The high peak reflow temperature tolerance allows for reliable soldering during the manufacturing process.
The low feedback capacitance minimizes signal distortion and interference in high-frequency applications.
Compliance with the AEC-Q101 standard ensures high-quality performance and reliability for automotive and industrial applications.
Power Field Effect Transistors (FET) NVMFS5C410NAFT1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
NVMFS5C410NAFT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Wafer Fab Chg 8/Jan/2021
PCN Packaging - MPN Label Update 08/Sep/2021 MPN label update 11/Oct/2021
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
SMBJ18CA
Synsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
MMBT2907ALT1G
Onsemi
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
LL4148
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
Daco Semiconductor
Micro Commercial Components
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
Formosa Microsemi
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Continental Device India
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
JANTX2N6796U
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;
IRF3205STRLPBF
Infineon Technologies
Infineon's IRF3205STRLPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With ENHANCEMENT MODE operation and DRAIN connection, it offers high power dissipation of 200W in a SMALL OUTLINE package.
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
IRF7759L2TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; No. of Elements: 1;
IRF7507TRPBF
IRF7507TRPBF by Infineon Technologies is a Power FET with N-CHANNEL and P-CHANNEL configuration. It has a max drain current of 2.4A, on-resistance of 0.14 ohm, and operates in enhancement mode for switching applications. This transistor is designed for surface mount with a package style of small outline, making it suitable for various electronic devices requiring efficient power management.
FDP20N50F
FDP20N50F by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 1110mJ EAS, and 0.26 ohm RDS(on). With a max power dissipation of 250W and operating temperature of 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
BSS138
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
IRFR6215TRPBF
Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
SQM40P10-40L_GE3
Vishay Intertechnology
The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
AO4490L
Alpha & Omega Semiconductor
AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
BSS123
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF540SPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 230 mJ; Maximum Drain-Source On Resistance: .077 ohm;
IRFR4620TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
JANTX2N6796
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
IRLML6401GTRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Minimum DS Breakdown Voltage: 12 V;
BSS138BKS,115
NXP Semiconductors
NXP Semiconductors' BSS138BKS,115 is an N-CHANNEL Power FET with 0.32A max drain current and 0.99W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C.
IRFZ44NS
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
FDS2582
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (Abs) (ID): 4.1 A;
STW11NK100Z
STMicroelectronics
STW11NK100Z by STMicroelectronics is a N-CHANNEL power FET with 1000V DS breakdown voltage. It is used for switching applications, with max drain current of 8.3A and on-resistance of 1.38 ohm.
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NVMFS5C604NLAFT1G
NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5113PLT1G
NVMFS5113PLT1G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 415A and an avalanche energy rating of 315mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of MSL1.
NVMFD5C650NLWFT1G
NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFD6H846NLWFT1G
NVMFD6H846NLWFT1G by Onsemi is an N-CHANNEL Power FET with 80V DS Breakdown Voltage and 114A Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a small outline package style and operates in enhancement mode with -55°C to 175°C temperature range.
NVMFS6H800NT1G
NVMFS6H800NT1G by Onsemi is a Power FET with 80V DS Breakdown Voltage, 203A Drain Current, and 0.0021 ohm On Resistance. It is used in applications requiring high power dissipation and operates in temperatures ranging from -55 to 175 °C. Ideal for automotive and industrial sectors due to AEC-Q101 standard compliance.
NVMFS5C604NLWFAFT1G
NVMFS5C604NLWFAFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance.
NVMFS5A140PLZWFT1G
NVMFS5A140PLZWFT1G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, 560A IDM, and 420mJ EAS. Ideal for power applications in automotive industry due to AEC-Q101 compliance and high drain current capacity.
NVMFS5C404NLAFT1G
NVMFS5C404NLAFT1G by Onsemi is a power FET with N-channel polarity, 40V DS breakdown voltage, and 370A max drain current. It is commonly used in applications requiring high power dissipation and temperature resistance, such as automotive electronics or industrial equipment.
NVMFD5C650NLT1G
NVMFD5C650NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage and 502A max pulsed drain current. It features a separate configuration with built-in diode, suitable for applications requiring high power dissipation such as automotive electronics. Operating in enhancement mode, it offers low on-resistance of 0.0058 ohm and can withstand temperatures from -55 to 175°C.
NVMFD5C466NLT1G
NVMFD5C466NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 198A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
NVMFS5C404NWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Minimum DS Breakdown Voltage: 40 V; Maximum Feedback Capacitance (Crss): 120 pF;
NVMFS5C442NLWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Peak Reflow Temperature (C): 260;
NVMFS5C404NLWFAFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 370 A; JESD-30 Code: R-PDSO-F5;
NVMFD5C446NLT1G
NVMFD5C446NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 644A Max Pulsed Drain Current. Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C Max Operating Temp.
NVMFS5832NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 127 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn) - annealed;
NVMFS6H818NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Avalanche Energy Rating (EAS): 731 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NVMFS5C404NLWFT1G
NVMFS5C404NLWFT1G by Onsemi is a single N-channel power FET with a max drain current of 352A and a max power dissipation of 200W. It utilizes metal-oxide semiconductor technology and can operate at temperatures up to 175°C. This FET is suitable for various applications requiring high power and efficient switching capabilities.
NVMFS3D6N10MCLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; No. of Elements: 1; No. of Terminals: 5;
NVMFS5113PLWFT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; Reference Standard: AEC-Q101;
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