Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STD7N52DK3
STMicroelectronics
STD7N52DK3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 6.2A, a breakdown voltage of 525V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
ULTRA-LOW RESISTANCE
100 mJ
SINGLE WITH BUILT-IN DIODE
525 V
6.2 A
6 A
1.15 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
90 W
24 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
STL80N3LLH6
STL80N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
DRAIN
30 V
80 A
21 A
.0076 ohm
R-PDSO-N5
5
60 W
84 A
NO LEAD
DUAL
SQS401EN-T1_GE3
Vishay Intertechnology
Vishay Intertechnology's SQS401EN-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 30A IDM, and 0.029 ohm RDS(on). Ideal for power applications requiring high drain current handling in small outline packages. Operating in enhancement mode, it offers a max temperature of 175°C and an EAS of 9.8 mJ.
9.8 mJ
40 V
12 A
.029 ohm
S-XDSO-C5
175 Cel
UNSPECIFIED
SQUARE
240
P-CHANNEL
30 A
C BEND
40
NTGD4161PT1G
Onsemi
NTGD4161PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and 0.16 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.1W and can handle up to 10A pulsed drain current.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
2.1 A
1.5 A
.16 ohm
R-PDSO-G6
6
1.1 W
10 A
Other Transistors
Tin (Sn)
NTD4809NHT4G
NTD4809NHT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and 52W Power Dissipation in a small outline package.
112.5 mJ
58 A
9 A
.0125 ohm
52 W
130 A
TIN
IPB06CN10NG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Peak Reflow Temperature (C): 245; Maximum Drain Current (ID): 100 A;
480 mJ
100 V
100 A
.0062 ohm
TO-263AB
245
214 W
400 A
IPB080N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Terminal Position: SINGLE; Peak Reflow Temperature (C): 245;
AVALANCHE RATED
448 mJ
60 V
.0077 ohm
320 A
BUZ31H3045A
Infineon's BUZ31H3045A is a N-CHANNEL FET with 200V DS Breakdown Voltage, 58A IDM, and 0.2 ohm RDS. Ideal for power applications requiring up to 95W dissipation in enhancement mode operation. Package style is small outline with gull wing terminals for surface mount assembly at max temp of 150°C.
200 mJ
200 V
14.5 A
.2 ohm
95 W
STB190NF04T4
STB190NF04T4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
860 mJ
120 A
.0043 ohm
310 W
480 A
NTD4960NT4G
NTD4960NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 137A and EAS of 51.2mJ, suitable for high-power operations. With a low 0.0127 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C temperature.
51.2 mJ
8.9 A
.0127 ohm
137 A
NTD4963NT4G
NTD4963NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 132A Pulsed Drain Current, and 0.016 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
33.8 mJ
44 A
8.1 A
.016 ohm
35.7 W
132 A
FET General Purpose Powers
STD11NM60N
STD11NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for efficient power management in compact electronic devices.
600 V
.45 ohm
100 W
40 A
Matte Tin (Sn) - annealed
STD65NF06
STD65NF06 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
390 mJ
60 A
.014 ohm
110 W
240 A
FDD8580
Fairchild Semiconductor
FDD8580 by Fairchild Semiconductor is a N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 153A and EAS of 66mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a RECTANGULAR shape, GULL WING terminals, and 0.009 ohm Drain-Source On Resistance.
66 mJ
20 V
35 A
.009 ohm
49.5 W
153 A
NTLJF3118NTAG
NTLJF3118NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A IDM, and 0.065 ohm RDS(on). This SMALL OUTLINE transistor has a SQUARE package shape and C BEND terminals.
2.6 A
.065 ohm
S-XDSO-C6
18 A
STS17NH3LL
STS17NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
LOW THRESHOLD
150 mJ
17 A
.0075 ohm
R-PDSO-G8
e4
8
2.7 W
68 A
NICKEL PALLADIUM GOLD
BSB012NE2LX
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Avalanche Energy Rating (EAS): 285 mJ; Maximum Drain Current (Abs) (ID): 170 A;
285 mJ
25 V
170 A
39 A
.0012 ohm
R-MBCC-N2
METAL
CHIP CARRIER
NOT SPECIFIED
57 W
BOTTOM
IRLH5030TR2PBF
International Rectifier
IRLH5030TR2PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 230mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and 0.0099 ohm RDS(on), it ensures efficient performance in various electronic devices.
230 mJ
13 A
.0099 ohm
250 W
IRF7901D1TRPBF
IRF7901D1TRPBF by International Rectifier is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Pulsed Drain Current of 24A, 0.038 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE for SWITCHING applications. This small outline transistor can handle up to 150°C operating temperature.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
.038 ohm
MS-012AA
2 W
IRF7220-TRPBF
IRF7220-TRPBF by International Rectifier is a P-CHANNEL FET with 14V DS Breakdown Voltage and 88A IDM. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150°C.
110 mJ
14 V
11 A
14 A
.012 ohm
2.5 W
88 A
Matte Tin (Sn)
FDB3652-F085
FDB3652-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 61A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low 0.016 ohm On Resistance.
182 mJ
61 A
150 W
HUFA76429D3ST-F085
HUFA76429D3ST-F085 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.029 ohm On Resistance. Ideal for applications requiring high power dissipation up to 110W in small outline packages.
20 A
TO-252AA
FDD3672-F085
FDD3672-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 44A Drain Current, and 0.028 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 144W Power Dissipation, -55 to 175 °C Operating Temperature range, and ENHANCEMENT MODE operation.
73 mJ
.028 ohm
-55 Cel
144 W
AEC-Q101
FQD2N60CTM-WS
FQD2N60CTM-WS by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 7.6A IDM, and 4.7 ohm RDS(on). It is used for switching applications in enhancement mode with a built-in diode, suitable for surface mount technology.
120 mJ
1.9 A
4.7 ohm
7.6 A
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
4.5 A
.055 ohm
FDS8958A-F085
FDS8958A-F085 by Onsemi is a Power FET with N-Channel and P-Channel types. It features 30V DS Breakdown Voltage, 20A IDM, and 0.028 ohm RDS(on). Ideal for switching applications, this MOSFET has a max operating temperature of 150°C and comes in an 8-terminal Gull Wing package.
54 mJ
7 A
N-CHANNEL AND P-CHANNEL
FDD8896-F085
FDD8896-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 94A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 168mJ. Perfect for high-power circuit designs requiring efficient switching capabilities.
168 mJ
94 A
.0068 ohm
.08 W
FDB045AN08A0-F085
FDB045AN08A0-F085 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 19A Drain Current, 0.0045 ohm On Resistance, and 310W Power Dissipation in a RECTANGULAR package. Operating at up to 175°C, it uses METAL-OXIDE SEMICONDUCTOR technology for high performance.
600 mJ
75 V
19 A
.0045 ohm
FDD8445-F085
FDD8445-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 79W.
144 mJ
50 A
.0087 ohm
270 pF
79 W
53 ns
138 ns
HUF76639S3ST-F085
HUF76639S3ST-F085 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 51A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style.
ULTRA LOW RESISTANCE
51 A
.026 ohm
180 W
FDB42AN15A0-F085
FDB42AN15A0-F085 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 35A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.042 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power requirements in automotive and industrial electronics.
78 mJ
150 V
.042 ohm
FDMS9408-F085
FDMS9408-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 80A Drain Current, and 0.0018 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 214W and fast turn-on/off times of 51ns/79ns.
143 mJ
.0018 ohm
R-PDSO-F5
FLAT
79 ns
51 ns
FDD10AN06A0-F085
Onsemi's FDD10AN06A0-F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 50A Drain Current, 0.0105 ohm On Resistance, and 135W Power Dissipation, it operates in ENHANCEMENT MODE. With a temperature range of -55 to 175 °C, this MOSFET is suitable for automotive (AEC-Q101) and industrial use.
429 mJ
.0105 ohm
135 W
FQB34P10TM-F085
FQB34P10TM-F085 by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 134A and EAS of 2200mJ, making it suitable for high-power operations. With 0.06 ohm RDS(on) and 155W Max Power Dissipation, this MOSFET offers efficient performance in various electronic designs.
2200 mJ
33.5 A
.06 ohm
155 W
134 A
FQD4P25TM-WS
FQD4P25TM-WS by Onsemi is a P-CHANNEL Power FET with 250V DS Breakdown Voltage, 12.4A IDM, and 2.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 45W. Suitable for surface mount with a temperature range of -55 to 150°C.
280 mJ
250 V
3.1 A
2.1 ohm
45 W
12.4 A
FQD3N60CTM-WS
FQD3N60CTM-WS by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Max Pulsed Drain Current, 150mJ Avalanche Energy Rating, and 50W Max Power Dissipation. Suitable for ENHANCEMENT MODE operation in various electronic devices.
2.4 A
3.4 ohm
50 W
9.6 A
FDD120AN15A0-F085
FDD120AN15A0-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 14A. This surface mount transistor operates in enhancement mode and has a max power dissipation of 65W.
122 mJ
.12 ohm
65 W
FDD2572-F085
FDD2572-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 29A. This surface mount transistor has a small outline package style and operates in an enhancement mode.
36 mJ
29 A
4 A
.054 ohm
FDD3682-F085
FDD3682-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 95W.
55 mJ
32 A
5.5 A
.036 ohm
FDB8832-F085
FDB8832-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 34A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 300W.
1246 mJ
34 A
.0022 ohm
300 W
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
121 mJ
.027 ohm
205 pF
69 W
81 ns
43 ns
DMN2040UVT-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 1; Terminal Form: GULL WING;
6.7 A
.024 ohm
83 pF
1.6 W
MIL-STD-202
DMP2075UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
3.8 A
.075 ohm
87 pF
25 A
DMT2004UFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 24 V;
24 V
70 A
.01 ohm
559 pF
S-PDSO-F8
2.3 W
90 A
DMT3009LFVWQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35.7 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .011 ohm;
HIGH RELIABILITY
19 mJ
.011 ohm
52 pF
AEC-Q101; MIL-STD-202
DMT6005LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Reference Standard: MIL-STD-202; JESD-609 Code: e3;
171 mJ
.007 ohm
69 pF
S-PDSO-N8
62.5 W
DMT615MLFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34.72 W; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 150 Cel;
ESD PROTECTED
18.05 mJ
38 A
34.72 W
DMTH3004LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;
15 A
.0055 ohm
240 pF
3
250 A
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