Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSC042N03SG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-30 Code: R-PDSO-F8; Maximum Drain Current (ID): 20 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
280 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
95 A
20 A
.0065 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F8
e3
3
1
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
62.5 W
200 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
FLAT
DUAL
SWITCHING
SILICON
NTD95N02RT4
Onsemi
NTD95N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 32A ID, and 0.005 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has an EAS of 84mJ, making it ideal for high-power switching circuits.
84 mJ
24 V
32 A
.005 ohm
R-PSSO-G2
e0
2
235
TIN LEAD
GULL WING
SINGLE
NTD95N02R
NTD95N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 32A ID, and 0.005 ohm Drain-Source Resistance. This MOSFET in GULL WING package style is designed for ENHANCEMENT MODE operation in various electronic circuits.
STB12NM50N
STMicroelectronics
STB12NM50N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 11A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
350 mJ
500 V
11 A
.38 ohm
245
100 W
44 A
Matte Tin (Sn) - annealed
30
STB200NF04L
STB200NF04L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for power management in compact designs.
1400 mJ
40 V
120 A
.0046 ohm
175 Cel
300 W
480 A
STB25NM50N
STB25NM50N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 22A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
22 A
.14 ohm
160 W
88 A
STB25NM60N
STB25NM60N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 21A max drain current, and built-in diode for enhanced performance. Ideal for compact power management solutions in electronics.
850 mJ
600 V
21 A
.16 ohm
TO-263AB
84 A
STD12NM50N
STD12NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 11A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
TO-252AA
BSC020N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Moisture Sensitivity Level (MSL): 3; Package Style (Meter): SMALL OUTLINE;
AVALANCHE RATED
800 mJ
25 V
100 A
29 A
.0031 ohm
104 W
IPB09N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 50 A;
LOGIC LEVEL COMPATIBLE
75 mJ
50 A
.0151 ohm
63 W
350 A
IPB100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
2390 mJ
55 V
.003 ohm
400 A
IPB100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
690 mJ
.0043 ohm
TO-263
IPB14N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 25 V;
60 mJ
30 A
.0136 ohm
46 W
210 A
IPB25N06S3-25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Avalanche Energy Rating (EAS): 60 mJ; JESD-30 Code: R-PSSO-G2;
25 A
.0251 ohm
48 W
IPB80N06S3L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Additional Features: LOGIC LEVEL COMPATIBLE; Package Body Material: PLASTIC/EPOXY;
250 mJ
80 A
.0056 ohm
136 W
320 A
IPDH6N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 350 A;
150 mJ
.006 ohm
71 W
IPFH6N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Maximum Drain Current (ID): 50 A; Additional Features: LOGIC LEVEL COMPATIBLE;
.0062 ohm
TO-252
R-PSSO-G3
NTB30N06G
The Onsemi NTB30N06G is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM and 0.042 ohm RDS(ON), operating in ENHANCEMENT MODE. With a max power dissipation of 88.2W, this transistor is suitable for high-power electronic devices.
101 mJ
60 V
27 A
.042 ohm
88.2 W
TIN
NTB30N06T4G
NTB30N06T4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Max Pulsed Drain Current, 0.042 ohm Max RDS(on), and 101mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE, has a max temp of 175 °C, and comes in a SMALL OUTLINE package style.
NTB52N10G
NTB52N10G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 52A, 0.03 ohm On Resistance, and 178W Power Dissipation. The transistor operates in ENHANCEMENT MODE and has a peak reflow temperature of 260 °C.
100 V
52 A
.03 ohm
178 W
156 A
NTB5605PG
NTB5605PG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage and 55A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.14 ohm RDS(on), and 150°C max operating temp.
338 mJ
17 A
18.5 A
P-CHANNEL
73.5 W
55 A
Other Transistors
NTB75N03L09T4G
NTB75N03L09T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications due to its 225A Pulsed Drain Current capability. Package: PLASTIC/EPOXY, Surface Mountable GULL WING with 125W Power Dissipation.
1500 mJ
75 A
.008 ohm
125 W
225 A
NTB75N06LG
NTB75N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 225A and EAS of 844mJ, suitable for high-power operations. With 0.011 ohm RDS(on) and 214W Pdiss, it ensures efficient performance in ENHANCEMENT MODE at up to 175 °C.
844 mJ
.011 ohm
214 W
NTB75N06LT4G
NTB75N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 225A and EAS of 844mJ, suitable for high-power operations. With 0.011 ohm RDS(on) and 214W Pdiss, it offers efficient performance in ENHANCEMENT MODE operation.
NTD12N10G
NTD12N10G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 36A IDM, and 0.165 ohm Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 56.6W at 175 °C temperature.
12 A
.165 ohm
NOT SPECIFIED
56.6 W
36 A
Tin (Sn)
DMN3112SSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 30 V; Maximum Pulsed Drain Current (IDM): 24 A;
HIGH RELIABILITY
6 A
.057 ohm
R-PDSO-G8
24 A
NTD5804NT4G
NTD5804NT4G by Onsemi is an N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 125A and EAS of 195mJ, making it suitable for high-power operations. With a compact SMALL OUTLINE package and low 0.0085 ohm RDS(on), it offers efficient performance in various electronic designs.
195 mJ
69 A
.0085 ohm
125 A
NTD5805NT4G
NTD5805NT4G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 85A IDM, and 0.0095 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 47W and can withstand temperatures up to 175 °C.
80 mJ
51 A
.0095 ohm
47 W
85 A
NTD5806NT4G
NTD5806NT4G by Onsemi is an N-channel Power FET with 40V DS breakdown voltage, 65A IDM, and 0.019 ohm RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode, this MOSFET has a max power dissipation of 40W at 175 °C.
38 mJ
33 A
.019 ohm
40 W
65 A
NTB18N06G
NTB18N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features GULL WING terminals in a SMALL OUTLINE package style for surface mount assembly.
61 mJ
15 A
.09 ohm
48.4 W
45 A
NTB18N06T4G
NTB18N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.09 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and 175 °C Max Temp make it suitable for various power electronics designs.
NTB30N20G
The Onsemi NTB30N20G is a N-CHANNEL FET with 200V DS Breakdown Voltage, 90A IDM, and 0.081 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 214W.
450 mJ
200 V
.081 ohm
90 A
NTD24N06G
NTD24N06G by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 60V DS Breakdown Voltage, 80A IDM, and 0.042 ohm RDS(on). With a max power dissipation of 62.5W and operating temperature up to 175 °C, it is suitable for high-power electronic devices.
162 mJ
MLD2N06CLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
58 V
2 A
.4 ohm
40
MMDF1N05ER2G
MMDF1N05ER2G by Onsemi is a N-CHANNEL Power FET with 50V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
300 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
50 V
.3 ohm
-55 Cel
2 W
10 A
MMDF2C03HDR2G
MMDF2C03HDR2G by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configuration, ideal for switching applications. It features 30V DS breakdown voltage, 21A max pulsed drain current, and 0.07 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150 °C, it's suitable for various power management tasks.
324 mJ
4.1 A
.07 ohm
N-CHANNEL AND P-CHANNEL
MMDF2N02ER2G
MMDF2N02ER2G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 18A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C.
245 mJ
3.6 A
.1 ohm
18 A
MMDF3N02HDR2G
MMDF3N02HDR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 19A IDM, and 0.09 ohm RDS. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150 °C.
405 mJ
20 V
3.8 A
19 A
MMSF3P02HDR2G
The Onsemi MMSF3P02HDR2G is a P-CHANNEL FET with 20V DS Breakdown Voltage, 30A IDM, and 0.075 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.5W. Suitable for surface mount designs, it has a temperature range of -55 to 150 °C.
567 mJ
5.6 A
.075 ohm
2.5 W
MTB2P50ET4G
MTB2P50ET4G by Onsemi is a P-CHANNEL FET with 500V DS Breakdown Voltage, 6A IDM, and 80mJ EAS. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
6 ohm
75 W
MTB50P03HDLG
MTB50P03HDLG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 150A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor features a built-in DIODE and operates at up to 150°C.
1250 mJ
.025 ohm
1.75 W
150 A
NID9N05CLG
NID9N05CLG by Onsemi is a N-CHANNEL FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
ESD PROTECTED
160 mJ
52 V
9 A
.181 ohm
28.8 W
35 A
NIF9N05CLT1G
NIF9N05CLT1G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 10A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package is RECTANGULAR with GULL WING terminals, suitable for ENHANCEMENT MODE operation at up to 150 °C.
110 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.6 A
.125 ohm
TO-261AA
R-PDSO-G4
4
1.69 W
NIF9N05CLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.69 W; Avalanche Energy Rating (EAS): 110 mJ; Package Style (Meter): SMALL OUTLINE;
NTB125N02RG
NTB125N02RG by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 250A IDM, and 0.0062 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 113.6W and operates at up to 150 °C.
120 mJ
113.6 W
250 A
NTB125N02RT4G
NTB125N02RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 250A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.0062 ohm RDS(on), and 120mJ EAS rating. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.
TO-220AB
NTB13N10G
NTB13N10G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 39A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.165 ohm RDS(on), and 175 °C max operating temp.
85 mJ
13 A
64.7 W
39 A
FET General Purpose Powers
NTB13N10T4G
NTB13N10T4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 39A IDM, and 0.165 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
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