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NTB30N06G

Onsemi

NTB30N06G by Onsemi

The Onsemi NTB30N06G is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM and 0.042 ohm RDS(ON), operating in ENHANCEMENT MODE. With a max power dissipation of 88.2W, this transistor is suitable for high-power electronic devices.

Median Price

$0.370

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.370

1k+ parts

$0.307

10k+ parts

$0.274

100

-

$0.370

$0.307

$0.274

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 933 parts In-Stock

1+ parts

$0.288

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-

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933

$0.288

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Vyrian

USA . 5,935 parts In-Stock

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5,935

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Distributors (Availability)

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Corphita

USA . 1,910 parts In-Stock

1+ parts

$0.273

100+ parts

-

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1,910

$0.273

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Corohmni

South Africa . 240 parts In-Stock

1+ parts

$0.303

100+ parts

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240

$0.303

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AZTECH Wire

Italy . 1,072 parts In-Stock

1+ parts

$10.220

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1,072

$10.220

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 24,820 parts In-Stock

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24,820

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Kulean Microsystems

USA . 7,491 parts In-Stock

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7,491

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TANS Electronics

Latvia . 5,559 parts In-Stock

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5,559

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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5,500

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SupplyDigital Components

Austria . 3,440 parts In-Stock

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3,440

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Problanco Electronics

Mexico . 2,465 parts In-Stock

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2,465

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UHIMA Technologies

Türkiye . 562 parts In-Stock

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562

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Overview

Unlock the power of innovation with the NTB30N06G by Onsemi, a high-quality Power Field Effect Transistor designed for switching applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this N-CHANNEL transistor offers unmatched reliability and performance. With a maximum pulsing drain current of 80A and a minimum breakdown voltage of 60V, this transistor provides superior efficiency and durability. Ideal for a wide range of applications, this product is a game-changer in the world of electronics, delivering exceptional value and benefits to customers seeking top-notch performance in their designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design and saves space by combining the transistor with a diode in a single package.

Transistor Application: SWITCHING

Optimized for switching applications, making it ideal for use in power supplies, motor control, and other similar applications.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, offering versatility in various applications.

Surface Mount: YES

Easily mountable on circuit boards, making the assembly process more efficient.

Maximum Pulsed Drain Current (IDM): 80 A

Capable of handling high current spikes, ensuring reliable performance in demanding situations.

Maximum Power Dissipation (Abs): 88.2 W

High power dissipation capability allows for continuous operation under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption, making it energy-efficient and suitable for various applications.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without performance degradation, ensuring reliability in harsh environments.

Technical Specifications

Power Field Effect Transistors (FET) NTB30N06G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

101 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

27 A

Maximum Drain Current (ID):

27 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTB30N06G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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