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NTB30N06T4G

Onsemi

NTB30N06T4G by Onsemi

NTB30N06T4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A Max Pulsed Drain Current, 0.042 ohm Max RDS(on), and 101mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE, has a max temp of 175 °C, and comes in a SMALL OUTLINE package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,996 parts In-Stock

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Digiode

USA . 1,368 parts In-Stock

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AZTECH Wire

Italy . 562 parts In-Stock

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$19.820

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 7,525 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 6,848 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,715 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 2,236 parts In-Stock

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Corphita

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Corohmni

South Africa . 256 parts In-Stock

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UHIMA Technologies

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Overview

Power up your electronics with the NTB30N06T4G by Onsemi! This high-quality Power FET offers enhanced performance and reliability for your switching applications. Onsemi's reputation for excellence in semiconductor technology ensures that you're getting a product that meets the highest standards. With its N-channel configuration, built-in diode, and impressive power dissipation capabilities, this transistor is perfect for a wide range of electronic projects. Say goodbye to overheating and hello to efficient power management with the NTB30N06T4G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance and lower on-resistance compared to P-channel FETs, making them a preferred choice in many scenarios.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and improves efficiency by allowing for reverse current flow protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage for reliable operation in demanding conditions.

Maximum Pulsed Drain Current (IDM): 80 A

Capable of handling high current pulses, suitable for power applications.

Maximum Power Dissipation (Abs): 88.2 W

High power dissipation capability for handling heavy loads without overheating.

Maximum Operating Temperature: 175 °C

Wide operating temperature range for versatility in different environments.

Maximum Drain-Source On Resistance: 0.042 ohm

Low on-resistance for efficient power transfer and minimal heat generation.

Technical Specifications

Power Field Effect Transistors (FET) NTB30N06T4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

101 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

27 A

Maximum Drain Current (ID):

27 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTB30N06T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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