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NTB35N15G

Onsemi

NTB35N15G by Onsemi

NTB35N15G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 111A Pulsed Drain Current, and 0.05 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 178W in a small outline package.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 7,278 parts In-Stock

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Digiode

USA . 1,479 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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AZTECH Wire

Italy . 1,184 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Problanco Electronics

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SupplyDigital Components

Austria . 5,976 parts In-Stock

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Kulean Microsystems

USA . 3,631 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 969 parts In-Stock

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UHIMA Technologies

Türkiye . 238 parts In-Stock

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Overview

Get ready to experience top-notch performance with the NTB35N15G by Onsemi. As a leader in power Field Effect Transistors (FET), Onsemi delivers unparalleled quality and reliability. This N-CHANNEL transistor with a built-in diode is perfect for switching applications, offering enhanced efficiency and power handling capabilities. With a maximum drain current of 37A and a low on-resistance of 0.05 ohms, this transistor provides exceptional value and benefits to customers. Trust Onsemi for all your power FET needs and take your applications to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the power FET, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have better performance and lower resistance compared to P-Channel FETs, making this product more efficient in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for better control and protection against reverse currents, enhancing the reliability of the switching operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this power FET is optimized for fast switching speeds and low on-resistance, ideal for efficient power management.

Surface Mount: YES

Being surface mountable makes installation and circuit board assembly much easier and more compact, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 150 V

With a high minimum breakdown voltage, this power FET can handle higher voltages and provide better reliability in high-power applications.

Maximum Pulsed Drain Current (IDM): 111 A

The high pulsed drain current rating allows for handling of short-term peak loads, making this power FET suitable for applications with varying power demands.

Maximum Power Dissipation (Abs): 178 W

The high power dissipation rating ensures that the power FET can handle high power levels without overheating, improving overall performance and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching characteristics, making this power FET suitable for demanding switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this power FET can operate effectively in high-temperature environments without sacrificing performance or reliability.

Technical Specifications

Power Field Effect Transistors (FET) NTB35N15G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

700 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

37 A

Maximum Drain Current (ID):

37 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

111 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTB35N15G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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