Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SI4542DY-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI4542DY-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL configurations, featuring 30V DS Breakdown Voltage. Ideal for applications requiring high power dissipation up to 2W, it operates in enhancement mode with max drain current of 6.9A. Suitable for surface mount designs due to its small outline package style.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
6.1 A
6.9 A
.025 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
2 W
40 A
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
SILICON
SI4880DY-T1-E3
SI4880DY-T1-E3 by Vishay Intertechnology is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 50A IDM and 0.0085 ohm RDS(on). With a max power dissipation of 2.5W and operating temperature up to 150°C, it's suitable for various electronic designs.
SINGLE WITH BUILT-IN DIODE
13 A
.0085 ohm
N-CHANNEL
2.5 W
50 A
FET General Purpose Powers
SWITCHING
SI7540DP-T1-E3
Vishay Intertechnology's SI7540DP-T1-E3 is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 7.6A and 0.017 ohm on-resistance, it operates in enhancement mode up to 150°C, making it suitable for various power management tasks.
DRAIN
12 V
5.7 A
7.6 A
.017 ohm
R-XDSO-C6
6
UNSPECIFIED
260
3.5 W
20 A
Matte Tin (Sn) - annealed
C BEND
30
SUD23N06-31L-E3
Vishay Intertechnology's SUD23N06-31L-E3 is a N-channel FET with 60V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features a built-in diode, 0.031 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this transistor has a max power dissipation of 100W and can withstand temperatures from -55 to 175°C.
20 mJ
60 V
23 A
.031 ohm
TO-252
R-PSSO-G2
175 Cel
-55 Cel
100 W
FET General Purpose Power
MATTE TIN OVER NICKEL
SINGLE
SUD45P03-10-E3
Vishay Intertechnology's SUD45P03-10-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 15A Drain Current, and 0.018 ohm On Resistance. Ideal for power management applications due to its 100A Pulsed Drain Current capability in a small outline package.
15 A
.018 ohm
P-CHANNEL
4 W
100 A
SUD50P04-15-E3
Vishay Intertechnology's SUD50P04-15-E3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.015 ohm RDS(ON). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 175°C.
40 V
.015 ohm
3 W
150 A
SUM110N04-03-E3
SUM110N04-03-E3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and max drain current of 110A. This transistor is commonly used for switching applications due to its high pulsed drain current and low drain-source on resistance.
110 A
.0028 ohm
TO-263AB
437.5 W
440 A
SUM40N10-30-E3
Vishay Intertechnology's SUM40N10-30-E3 is a N-channel power FET with 100V DS breakdown voltage and 40A max drain current. Ideal for switching applications, it features a built-in diode, 0.03 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 107W at 175°C.
100 V
.03 ohm
107 W
75 A
BSC079N03SG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
120 mJ
14.6 A
.0116 ohm
R-PDSO-F8
3
60 W
160 A
FLAT
BSC094N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Avalanche Energy Rating (EAS): 90 mJ; Moisture Sensitivity Level (MSL): 3;
90 mJ
35 A
.0094 ohm
52 W
140 A
BSC119N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; JESD-30 Code: R-PDSO-F8; Maximum Pulsed Drain Current (IDM): 120 A;
60 mJ
30 A
11.9 A
.0119 ohm
43 W
120 A
IPB11N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 30 A; Qualification: Not Qualified;
LOGIC LEVEL COMPATIBLE
80 mJ
25 V
.0112 ohm
210 A
IPD03N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
240 mJ
90 A
.0049 ohm
TO-252AA
115 W
360 A
IPD05N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
.0048 ohm
94 W
420 A
IPD06N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Pulsed Drain Current (IDM): 200 A; Maximum Operating Temperature: 175 Cel;
160 mJ
.0061 ohm
83 W
200 A
IPD09N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Drain Current (Abs) (ID): 50 A; JESD-30 Code: R-PSSO-G2;
57 mJ
.0142 ohm
58 W
IPD10N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 30 A;
.0104 ohm
IPD10N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 1;
e0
TIN LEAD
IPD12N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
64 mJ
IPF10N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
R-PSSO-G3
SUM110N06-3M9H-E3
Vishay Intertechnology's SUM110N06-3M9H-E3 is a N-channel Power FET with 60V DS breakdown voltage and 440A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it offers 0.0039 ohm max drain-source resistance and 375W power dissipation.
245 mJ
.0039 ohm
375 W
IPD13N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; JESD-30 Code: R-PSSO-G2; Qualification: Not Qualified;
.0128 ohm
46 W
IPF06N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
225 mJ
350 A
IPF13N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 46 W; Peak Reflow Temperature (C): 260; Terminal Position: SINGLE;
IPD04N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 3;
600 mJ
.0057 ohm
IPD09N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
75 mJ
.0148 ohm
63 W
IPF09N03LAG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 3;
STD22NM20NT4
STMicroelectronics
STD22NM20NT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 22 A, breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for power management in compact devices.
380 mJ
200 V
22 A
.105 ohm
88 A
IRLR024ZPBF
International Rectifier
IRLR024ZPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 64A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.058 ohm RDS(on), and 175°C max operating temp. Perfect for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
25 mJ
55 V
16 A
.058 ohm
35 W
64 A
Matte Tin (Sn) - with Nickel (Ni) barrier
IRF7471PBF
IRF7471PBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features a single configuration with built-in diode, ideal for switching applications. With a max IDM of 83A and EAS of 300mJ, it operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.
300 mJ
10 A
.013 ohm
MS-012AA
83 A
IRF7471TRPBF
IRF7471TRPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 83A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 2.5W and can handle up to 10A drain current.
IRF7492PBF
IRF7492PBF by International Rectifier is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 30A IDM and 0.079 ohm RDS(on), it operates in enhancement mode at temperatures ranging from -55 to 150°C.
130 mJ
3.7 A
.079 ohm
IRF7805APBF
IRF7805APBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 13A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, it can handle up to 100A pulsed drain current.
.011 ohm
BSC052N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3;
168 mJ
80 A
18 A
.0082 ohm
54 W
BSC059N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Finish: MATTE TIN; Terminal Position: DUAL;
150 mJ
73 A
17.5 A
.0086 ohm
48 W
NTD65N03RT4G
Onsemi
NTD65N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Min DS Breakdown Voltage of 25V, and Max Pulsed Drain Current of 130A. This MOSFET has a PLASTIC/EPOXY package body material and operates in ENHANCEMENT MODE.
71.7 mJ
32 A
.0146 ohm
130 A
TIN
NTD78N03
NTD78N03 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 210A, min DS breakdown voltage of 25V, and max drain-source on resistance of 0.006 ohm. This MOSFET in small outline package is ideal for high-power enhancement mode operations.
722.5 mJ
11.4 A
.006 ohm
235
BSC022N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
800 mJ
28 A
.0033 ohm
104 W
NTB65N02RG
NTB65N02RG by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 60mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 62.5W and small outline package style, it offers efficient performance up to 150 °C.
65 A
.0105 ohm
62.5 W
NTB65N02RT4G
NTB65N02RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 62.5W.
NTLTD7900ZR2G
NTLTD7900ZR2G by Onsemi is an N-CHANNEL FET with 2 elements, built-in diode and resistor. It has a max pulsed drain current of 30A and min DS breakdown voltage of 20V. Ideal for switching applications, this transistor operates in enhancement mode with a max power dissipation of 3.2W at a max temp of 150 °C.
ESD PROTECTED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
20 V
6 A
.026 ohm
R-XDSO-N8
3.2 W
NO LEAD
STH250N55F3-6
STH250N55F3-6 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 180 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with minimal resistance.
ULTRA-LOW RESISTANCE
1000 mJ
180 A
.0026 ohm
R-PSSO-G6
245
300 W
720 A
IPB03N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;
580 mJ
150 W
320 A
IPB04N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
270 mJ
.0051 ohm
IPB05N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
136 mJ
.005 ohm
IPB06N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
164 mJ
.0063 ohm
IPB10N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Avalanche Energy Rating (EAS): 57 mJ; Terminal Form: GULL WING;
.0096 ohm
BSC032N03SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Maximum Drain-Source On Resistance: .0049 ohm; Maximum Drain Current (ID): 23 A;
550 mJ
78 W
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