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SUD23N06-31L-E3

Vishay Intertechnology

SUD23N06-31L-E3 by Vishay Intertechnology

Vishay Intertechnology's SUD23N06-31L-E3 is a N-channel FET with 60V DS breakdown voltage and 50A IDM. Ideal for switching applications, it features a built-in diode, 0.031 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this transistor has a max power dissipation of 100W and can withstand temperatures from -55 to 175°C.

Median Price

$1,393.920

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 67 parts In-Stock

1+ parts

$1,393.920

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67

$1,393.920

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Vyrian

USA . 7,907 parts In-Stock

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7,907

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Euro-Tech

UK . 925 parts In-Stock

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925

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Kiltronic GmbH

Germany . 254 parts In-Stock

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254

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ABC Electronics Ltd.

UK . 48 parts In-Stock

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 56 parts In-Stock

1+ parts

$0.743

100+ parts

$0.676

1k+ parts

$0.609

10k+ parts

-

56

$0.743

$0.676

$0.609

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Ampacity Inc.

Singapore . 924 parts In-Stock

1+ parts

$12.050

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924

$12.050

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AZTECH Wire

Italy . 562 parts In-Stock

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$19.741

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562

$19.741

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Continental Prestige Electronics

USA . 4,955 parts In-Stock

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$1,393.920

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$1,366.042

4,955

$1,393.920

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$1,366.042

Argo Parts USA

USA . 2,775 parts In-Stock

1+ parts

$1,393.920

100+ parts

$1,379.981

1k+ parts

$1,366.042

10k+ parts

$1,352.102

2,775

$1,393.920

$1,379.981

$1,366.042

$1,352.102

Perfect Parts

USA . 25,159 parts In-Stock

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25,159

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Upgrade your power management solutions with the SUD23N06-31L-E3 by Vishay Intertechnology. Crafted with precision and expertise, this N-channel Power Field Effect Transistor (FET) offers reliable performance in switching applications. With a maximum pulsing drain current of 50A and a low on-resistance of 0.031 ohm, this transistor ensures efficiency and durability. Whether you're looking to enhance your circuit designs or optimize power distribution, the SUD23N06-31L-E3 delivers superior quality and value for your projects. Choose Vishay Intertechnology for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used for high power applications and offer better performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for circuit protection and efficiency.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and efficient operation.

Surface Mount: YES

Easy to install and suitable for miniaturized designs.

Minimum DS Breakdown Voltage: 60 V

Suitable for handling higher voltages, making it versatile for different circuits.

Maximum Pulsed Drain Current (IDM): 50 A

Capable of handling high currents for robust performance.

Maximum Power Dissipation (Abs): 100 W

Can handle high power dissipation, making it reliable in demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers good performance and efficiency in power applications.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) SUD23N06-31L-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

20 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

23 A

Maximum Drain Current (ID):

23 A

Maximum Drain-Source On Resistance:

.031 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

50 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUD23N06-31L-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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