Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTD15N06LT4
Onsemi
NTD15N06LT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 1.5W.
LOGIC LEVEL COMPATIBLE
61 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
15 A
.1 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e0
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL
1.5 W
45 A
Not Qualified
FET General Purpose Power
YES
TIN LEAD
GULL WING
SINGLE
SWITCHING
SILICON
STD35NF3LLT4
STMicroelectronics
STD35NF3LLT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 35 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
300 mJ
30 V
35 A
.0215 ohm
TO-252AA
e3
260
50 W
140 A
MATTE TIN
30
STS4DNFS30L
STS4DNFS30L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
4 A
.065 ohm
R-PDSO-G8
e4
8
150 Cel
2 W
16 A
NICKEL PALLADIUM GOLD
DUAL
NTD30N02T4
NTD30N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V Min DS Breakdown Voltage, 100A Max Pulsed Drain Current, and 0.0145 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
50 mJ
24 V
30 A
.0145 ohm
75 W
100 A
NTD80N02T4
NTD80N02T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W, making it ideal for high-power switching applications.
733 mJ
80 A
.0058 ohm
200 A
NTD80N02
NTD80N02 by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a max drain current of 80A, min DS breakdown voltage of 24V, and max pulsed drain current of 200A. With a package style of small outline and operating temperature up to 150 °C, it offers efficient performance in various electronic devices.
STB20NM60T4
STB20NM60T4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 80A max pulsed drain current, 650mJ avalanche energy rating, and 0.29 ohm max drain-source resistance. Operating in enhancement mode, it has a max power dissipation of 192W and can withstand up to 150°C.
650 mJ
600 V
20 A
.29 ohm
TO-263AB
245
192 W
Matte Tin (Sn) - annealed
STB85NF55LT4
STB85NF55LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
980 mJ
55 V
.01 ohm
300 W
320 A
SPB10N10
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
AVALANCHE RATED
60 mJ
100 V
10.3 A
.17 ohm
220
41.2 A
SPB21N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
130 mJ
21 A
.08 ohm
90 W
84 A
SPD100N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: MATTE TIN;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
325 mJ
.0063 ohm
TO-252
R-PSSO-G4
4
150 W
400 A
SPD11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .17 ohm;
10.5 A
3
SPD35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
245 mJ
.044 ohm
STC5NF20V
STC5NF20V by STMicroelectronics is a versatile N-channel MOSFET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5 A
.045 ohm
1.6 W
STS4NF100
STS4NF100 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
.07 ohm
2.5 W
SPB35N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 2; No. of Elements: 1;
SPD22N08S2L-50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 175 Cel; Case Connection: DRAIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
94 mJ
75 V
22 A
18 A
58 W
STD30NF06
STD30NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 28 A, a breakdown voltage of 60 V, and low on-resistance of 0.028 Ω. Ideal for efficient power management in compact designs.
230 mJ
28 A
.028 ohm
NOT SPECIFIED
112 A
STB12NM50FDT4
STB12NM50FDT4 from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
400 mJ
500 V
12 A
.4 ohm
160 W
48 A
STB9NK70ZT4
STB9NK70ZT4 by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 700V breakdown voltage, 30A pulsed drain current, and operates at up to 150 °C. Ideal for compact power management solutions in various electronics.
700 V
7.5 A
1.2 ohm
115 W
STS17NF3LL
STS17NF3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in electronic devices.
17 A
.007 ohm
3.2 W
68 A
STS25NH3LL
STS25NH3LL by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 25 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Ideal for power management in compact devices, it ensures reliable performance with low on-resistance.
1300 mJ
25 A
.005 ohm
-55 Cel
40
STD2NM60T4
STD2NM60T4 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 8A max pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient performance in various electronic circuits.
250 mJ
2 A
3.2 ohm
46 W
8 A
STB160NF3LLT4
STB160NF3LLT4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, breakdown voltage of 30 V, and low on-resistance of 0.004 Ω. Ideal for high-performance power management in compact designs.
1200 mJ
160 A
.004 ohm
640 A
Matte Tin (Sn)
STT2PF60L
STT2PF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 2A max drain current, and operates at up to 150 °C. Its compact SO-6 package ensures easy surface mounting in various electronic devices.
.3 ohm
R-PDSO-G6
6
P-CHANNEL
Other Transistors
STS4DPF30L
STS4DPF30L by STMicroelectronics is a P-channel FET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact SO package ensures easy surface mounting in various electronic devices.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
225
NTB90N02
NTB90N02 by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features 0.0058 ohm RDS(on) and 733mJ EAS rating. The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.
90 A
85 W
FQD17P06TF
Fairchild Semiconductor
FQD17P06TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 48A Max Pulsed Drain Current and 0.135 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W and can withstand temperatures up to 150°C.
.135 ohm
44 W
FQB13N10TM
FQB13N10TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 51.2A IDM, 95mJ EAS, and 0.18 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 65W at 175°C.
95 mJ
12.8 A
.18 ohm
65 W
51.2 A
FQB14N30TM
FQB14N30TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 14.4A, Max Power Dissipation of 147W, and an Operating Temperature up to 150°C. This SINGLE configuration transistor in PLASTIC/EPOXY package is designed for high-performance ENHANCEMENT MODE operation.
600 mJ
300 V
14.4 A
147 W
57.6 A
FQD19N10LTF
FQD19N10LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62.4A Max Pulsed Drain Current, 220mJ Avalanche Energy Rating, and 0.11 ohm Max Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
220 mJ
15.6 A
.11 ohm
62.4 A
FQD2N80TF
FQD2N80TF by Fairchild Semiconductor is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. This MOSFET has a max IDM of 7.2A and EAS of 180mJ, making it ideal for high-power operations in small outline packages.
180 mJ
800 V
1.8 A
6.3 ohm
7.2 A
FQD30N06LTM
FQD30N06LTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 96A IDM and 0.047 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 150°C.
24 A
.047 ohm
96 A
FQD5P10TF
FQD5P10TF by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 14.4A IDM, and 1.05 ohm RDS(on). With a max power dissipation of 25W and operating temperature up to 150°C, it's ideal for high-power switching circuits in various electronic devices.
55 mJ
3.6 A
1.05 ohm
25 W
FQD7P20TF
FQD7P20TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a 0.69 ohm RDS(on) and can handle up to 55W power dissipation.
570 mJ
200 V
5.7 A
.69 ohm
55 W
22.8 A
SFM9014TF
SFM9014TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max IDM of 14A and EAS of 8.3mJ, it offers high performance in a small outline package suitable for various power management needs.
8.3 mJ
.5 ohm
R-PDSO-G4
2.8 W
14 A
SFR9024TM
Fairchild Semiconductor's SFR9024TM is a P-CHANNEL FET for switching applications. It features a 60V DS breakdown voltage, 31A IDM, and 0.28 ohm RDS(on). With a max power dissipation of 32W, it operates in enhancement mode at up to 150°C.
104 mJ
7.8 A
.28 ohm
32 W
31 A
FQD11P06TF
FQD11P06TF by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 37.6A Max IDM, 160mJ EAS, and 0.185 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 38W at 150°C.
160 mJ
9.4 A
.185 ohm
38 W
37.6 A
FQD12N20LTF
FQD12N20LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 55W Pdiss and -55 to 150°C operating temp.
210 mJ
9 A
.32 ohm
36 A
NTB18N06LT4G
NTB18N06LT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at 175 °C max temp, it offers high power dissipation of 48.4W in a SMALL OUTLINE package.
48.4 W
TIN
STB15NK50ZT4
STB15NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
HIGH VOLTAGE
.34 ohm
56 A
STS4DNF30L
STS4DNF30L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
.06 ohm
STB9NK50ZT4
STB9NK50ZT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 7.2A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
190 mJ
.85 ohm
110 W
28.8 A
STC6NF30V
STC6NF30V by STMicroelectronics is a versatile N-channel FET designed for switching applications. It features a max drain current of 6 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
6 A
.03 ohm
1.25 W
STD30PF03LT4
STD30PF03LT4 by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 24 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in surface mount designs.
850 mJ
.04 ohm
70 W
STD38NH02LT4
STD38NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 38 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronics.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
38 A
.0135 ohm
40 W
152 A
STD5NK60ZT4
STD5NK60ZT4 by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 5A and Max Power Dissipation of 90W. This ENHANCEMENT MODE transistor operates at up to 150°C and has a built-in diode in a small outline package.
1.6 ohm
STD90NH02LT4
STD90NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
60 A
.006 ohm
95 W
240 A
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