Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPN04N60S5
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 600 V;
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
.8 A
.95 ohm
METAL-OXIDE SEMICONDUCTOR
TO-261AA
R-PDSO-G4
e0
1
4
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
1.8 W
3 A
Not Qualified
FET General Purpose Power
YES
TIN LEAD
GULL WING
DUAL
SILICON
NTB75N06LT4
Onsemi
NTB75N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 214W Pdiss, 175 °C Temp Rating, and EAS of 844mJ. Package: PLASTIC/EPOXY, GULL WING Terminals, ENHANCEMENT MODE operation.
844 mJ
60 V
75 A
.011 ohm
R-PSSO-G2
2
175 Cel
235
214 W
225 A
SINGLE
SWITCHING
NTB75N06L
The Onsemi NTB75N06L is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 225A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.011 ohm RDS(on), and 214W Pdiss. Suitable for surface mount designs in power electronics up to 175 °C operating temp.
NTD20N03L27
NTD20N03L27 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60A IDM, and 0.031 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it ideal for high-power switching circuits.
AVALANCHE RATED
288 mJ
30 V
20 A
.031 ohm
1.75 W
60 A
NTD20N06T4
NTD20N06T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max power dissipation of 60W, making it ideal for high-power switching circuits.
170 mJ
.046 ohm
60 W
NTD3055-094
NTD3055-094 by Onsemi is a Power FET with N-CHANNEL configuration and built-in diode, ideal for switching applications. It features a 60V DS breakdown voltage, 45A pulsed drain current, and 0.094 ohm max on-resistance. With a small outline package style and operating temp of 175 °C, it's suitable for various electronic designs.
61 mJ
12 A
.094 ohm
1.5 W
45 A
NTD3055L104
NTD3055L104 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). With a max power dissipation of 48W and operating temperature range of -55 to 175 °C, it is ideal for various electronic designs requiring high-performance transistors.
.104 ohm
-55 Cel
48 W
NTMD6N02R2
NTMD6N02R2 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 30A IDM, 0.035 ohm RDS(on), and 360mJ EAS for high-performance requirements. With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150 °C making it suitable for various industrial uses.
LOGIC LEVEL COMPATIBLE
360 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.92 A
.035 ohm
R-PDSO-G8
8
.73 W
30 A
Tin/Lead (Sn/Pb)
30
NTB45N06LT4
NTB45N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.028 ohm On Resistance, and 150A Pulsed Drain Current. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
240 mJ
.028 ohm
2.4 W
150 A
NTB60N06LT4
NTB60N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
454 mJ
.016 ohm
150 W
180 A
NTB60N06L
NTB60N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power circuit designs requiring efficient switching capabilities.
NTD32N06L
NTD32N06L by Onsemi is a Power FET with 60V DS Breakdown Voltage, 32A Drain Current, and 0.028 ohm On Resistance. It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is PLASTIC/EPOXY with GULL WING terminals, suitable for surface mount assembly.
313 mJ
32 A
90 A
NTD32N06
NTD32N06 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 32A Drain Current, and 0.026 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 93.75W and can handle up to 90A pulsed drain current.
.026 ohm
93.75 W
FET General Purpose Powers
NTD4302T4
NTD4302T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE and has a max temperature rating of 150 °C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
722 mJ
8.4 A
.01 ohm
1.04 W
28 A
NTD4302
NTD4302 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 28A Pulsed Drain Current, and 0.01 ohm Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max temperature of 150 °C.
STS5PF30L
STMicroelectronics
STS5PF30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage, 20A IDM, and 0.075 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates at up to 150°C.
LOW THRESHOLD
5 A
.075 ohm
e4
260
P-CHANNEL
2.5 W
Other Transistors
NICKEL PALLADIUM GOLD
40
BSO4410
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 11.1 A; Transistor Element Material: SILICON;
126 mJ
11.1 A
.013 ohm
e3
44.5 A
MATTE TIN
BSO4420
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
230 mJ
13 A
.0078 ohm
52 A
BSO4804
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
90 mJ
8 A
.02 ohm
3
2 W
BSO4822
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
165 mJ
12.7 A
51 A
BSP615S2L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
55 V
2.8 A
.15 ohm
11 A
IPD20N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Operating Temperature: 175 Cel; Minimum DS Breakdown Voltage: 30 V;
15 mJ
TO-252AA
255
42 W
120 A
SPB100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
810 mJ
100 A
.003 ohm
TO-263AB
300 W
400 A
SPB100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 175 Cel;
.0034 ohm
SPB42N03S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
110 mJ
42 A
.0196 ohm
220
64 W
248 A
SPB77N06S2-12
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain-Source On Resistance: .012 ohm; Minimum DS Breakdown Voltage: 55 V;
280 mJ
77 A
80 A
.012 ohm
140 W
320 A
SPB80N04S2-H4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
660 mJ
40 V
.004 ohm
250 W
SPB80N04S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AA; Operating Mode: ENHANCEMENT MODE;
.0042 ohm
TO-263AA
SPB80N06S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Minimum DS Breakdown Voltage: 55 V; Maximum Operating Temperature: 175 Cel;
530 mJ
.0066 ohm
SPB80N06S2-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; JEDEC-95 Code: TO-263AB; Package Body Material: PLASTIC/EPOXY;
370 mJ
.0091 ohm
190 W
SPB80N06S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Terminals: 2; Maximum Drain Current (ID): 80 A;
.0084 ohm
SPB80N06S2L-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Avalanche Energy Rating (EAS): 370 mJ; No. of Terminals: 2;
.0113 ohm
SPB80N06S2L-11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 80 A; JEDEC-95 Code: TO-263AB;
.0147 ohm
SPD14N06S2-80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Additional Features: AVALANCHE RATED;
43 mJ
14 A
17 A
.08 ohm
TO-252
30 W
68 A
SPD15N06S2L-64
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
15 A
19 A
.085 ohm
76 A
SPD26N06S2L-35
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 26 A;
80 mJ
26 A
.047 ohm
50 W
SPD30N03S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
250 mJ
.0098 ohm
125 W
SPD30N03S2L-10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 82 W; Maximum Drain Current (Abs) (ID): 30 A; No. of Elements: 1;
150 mJ
.0146 ohm
82 W
SPD30N03S2L-20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Package Style (Meter): SMALL OUTLINE;
70 mJ
SPD30N06S2-23
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
.023 ohm
83 W
FDS2170N7
Fairchild Semiconductor
FDS2170N7 by Fairchild Semiconductor is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current and 0.128 ohm Max Drain-Source On Resistance. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE at up to 150°C.
400 mJ
200 V
.128 ohm
3 W
STS2DPFS20V
STS2DPFS20V by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a max drain current of 2.5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact SO8 package ensures easy surface mounting in various electronic devices.
SO-8
2 A
2.5 A
.25 ohm
10 A
NTB13N10
NTB13N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 39A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.165 ohm RDS(on), and 175 °C max operating temp. Perfect for high-power switching circuits in various electronic devices.
85 mJ
100 V
.165 ohm
64.7 W
39 A
NTB18N06LT4
NTB18N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Max Pulsed Drain Current and 61mJ Avalanche Energy Rating. With a compact RECTANGULAR package and ENHANCEMENT MODE operation, it offers efficient power management in various electronic devices.
.1 ohm
48.4 W
NTB18N06L
NTB18N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, suitable for SWITCHING applications. It features a max IDM of 45A and EAS of 61mJ, making it ideal for high-power requirements. With a low 0.1 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, offering reliable performance in various electronic systems.
NTB22N06LT4
NTB22N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications due to its 175 °C Max Temp and 72mJ EAS rating. Features GULL WING terminals in a SMALL OUTLINE package style.
72 mJ
22 A
.065 ohm
66 A
NTB22N06T4
NTB22N06T4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max power dissipation of 60W and can withstand temperatures up to 175 °C.
.06 ohm
NTB30N06LT4
NTB30N06LT4 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A Drain Current, and 0.046 ohm On Resistance. Ideal for SWITCHING applications, it features a 90A Pulsed Drain Current and 101mJ Avalanche Energy Rating. The PLASTIC/EPOXY package with GULL WING terminals operates in ENHANCEMENT MODE up to 175 °C.
101 mJ
88.2 W
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