Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB200NF04T4
STMicroelectronics
STB200NF04T4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and robust thermal performance.
1300 mJ
SINGLE WITH BUILT-IN DIODE
40 V
120 A
.0037 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
N-CHANNEL
310 W
480 A
Not Qualified
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
GULL WING
SINGLE
30
SWITCHING
SILICON
STD55NH2LLT4
STD55NH2LLT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
600 mJ
DRAIN
24 V
55 A
40 A
.0135 ohm
TO-252AA
60 W
160 A
MATTE TIN
FDD24AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD24AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.019 ohm.
32 mJ
60 V
7.1 A
.019 ohm
-55 Cel
260
75 W
AEC-Q101
FQB22P10TM_F085
FQB22P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W at 175°C.
710 mJ
100 V
22 A
.125 ohm
P-CHANNEL
125 W
88 A
Other Transistors
NTTFS4823NTAG
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32.9 W; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;
31 mJ
30 V
50 A
12.6 A
.0175 ohm
S-PDSO-N5
5
150 Cel
SQUARE
NOT SPECIFIED
32.9 W
150 A
Tin (Sn)
NO LEAD
DUAL
NTD60N02RT4G
NTD60N02RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 48W, making it ideal for high-performance electronic devices.
60 mJ
25 V
32 A
.0105 ohm
48 W
TIN
NTB5605PT4
NTB5605PT4 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 55A IDM, and 0.14 ohm RDS(on). With a max power dissipation of 73.5W and operating temperature up to 150 °C, it's ideal for high-power switching circuits.
338 mJ
17 A
18.5 A
.14 ohm
e0
235
73.5 W
TIN LEAD
NTB5605P
The Onsemi NTB5605P is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 55A and EAS of 338mJ, suitable for high-power operations. With a low 0.14 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C.
STB11NM60FDT4
STB11NM60FDT4 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 160W max power dissipation. Package style is small outline with gull wing terminals, suitable for surface mount assembly at up to 245°C peak reflow temperature.
350 mJ
600 V
11 A
.45 ohm
160 W
44 A
SPN03N60C3
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; JEDEC-95 Code: TO-261AA; Package Style (Meter): SMALL OUTLINE;
.7 A
1.4 ohm
TO-261AA
R-PDSO-G4
4
255
1.8 W
3 A
STB21NK50Z
STB21NK50Z by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
850 mJ
500 V
.27 ohm
TO-263AB
190 W
68 A
STB30NM50N
STB30NM50N from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 27A max drain current. It offers a low on-resistance of 0.115Ω and operates at up to 150 °C. Its compact design suits surface mount configurations.
900 mJ
ISOLATED
27 A
.115 ohm
108 A
STB35N65M5
STB35N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 108A IDM, and 0.098 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 27A ID and 160W Pd. Package style is SMALL OUTLINE, suitable for surface mount with GULL WING terminals.
800 mJ
650 V
.098 ohm
STD150N3LLH6
STD150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A Max Pulsed Drain Current and 0.0045 ohm Max RDS(on), operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and 110W Power Dissipation, it offers high performance in various power management systems.
525 mJ
80 A
.0045 ohm
TO-252
110 W
320 A
STD8NM60ND
STD8NM60ND by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
200 mJ
7 A
.7 ohm
70 W
28 A
NTD3055-094G
NTD3055-094G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 45A Max Pulsed Drain Current, and 0.094 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max operating temperature of 175 °C.
61 mJ
12 A
.094 ohm
1.5 W
45 A
RTQ040P02TR
ROHM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 16 A; Package Body Material: PLASTIC/EPOXY;
20 V
4 A
.055 ohm
R-PDSO-G6
e1
6
1.25 W
16 A
TIN SILVER COPPER
10
BSF045N03MQ3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
30 mJ
63 A
18 A
.0059 ohm
R-MBCC-N2
METAL
CHIP CARRIER
28 W
252 A
BOTTOM
STK30N2LLH5
STK30N2LLH5 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a low on-resistance of 0.0036 Ω, and operates at up to 25 V breakdown voltage. Ideal for compact designs, it comes in a no-lead surface mount package.
30 A
.0036 ohm
R-XDSO-N4
UNSPECIFIED
NTD60N02RG
NTD60N02RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE and has a max power dissipation of 48W.
NTD70N03R-001
Onsemi's NTD70N03R-001 is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. Features include 32A max drain current, 0.013 ohm max on resistance, and 140A pulsed drain current. Ideal for enhancing performance in power management systems.
71.7 mJ
.013 ohm
140 A
NTD70N03RG
NTD70N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 150 °C, and Max Drain Current of 32A. This MOSFET has a low on-resistance of 0.013 ohm and is designed for surface mount installation in various electronic devices.
62.8 A
1.56 W
NTHD3100CT1
NTHD3100CT1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, max drain current of 3.2A, and 0.08 ohm on-resistance. Operating at up to 150 °C, this MOSFET is suitable for various power management tasks in electronics.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3.2 A
2.9 A
.08 ohm
R-XDSO-C8
8
N-CHANNEL AND P-CHANNEL
1.1 W
C BEND
NTHS2101PT1G
NTHS2101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. Ideal for power management in compact devices due to its small outline package and high power dissipation capability of 1.3W.
LOGIC LEVEL COMPATIBLE
8 V
5.4 A
.025 ohm
1.3 W
7.5 A
NTB25P06G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
25 A
27.5 A
.082 ohm
100 W
NTF3055L108T3G
NTF3055L108T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 9A Max Pulsed Drain Current, and 0.12 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 2.1W, making it ideal for high-power switching circuits.
74 mJ
.12 ohm
2.1 W
9 A
NTF3055L108T3LFG
NTF3055L108T3LFG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and dual terminal position.
3
NTF3055L175T1G
NTF3055L175T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 2A Max Drain Current, and 0.175 ohm Max RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A IDM and 65mJ EAS. Package style is SMALL OUTLINE with GULL WING terminals.
65 mJ
2 A
.175 ohm
6 A
NTF3055L175T3G
NTF3055L175T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 6A Max Pulsed Drain Current, and 0.175 ohm Max Drain-Source Resistance. Ideal for use in ENHANCEMENT MODE operations with a max temp of 175 °C.
STB45NF06T4
STB45NF06T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS breakdown voltage, 38A max drain current, and 0.028 ohm RDS(on). Ideal for switching applications, it features a built-in diode, 152A pulsed drain current, and 80W power dissipation in a small outline package.
135 mJ
38 A
.028 ohm
80 W
152 A
STB5NK50ZT4
STB5NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 17.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
130 mJ
4.4 A
1.5 ohm
17.6 A
MTB30P06VT4G
MTB30P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 105A IDM, 450mJ EAS, and 0.08 ohm RDS(on). With a max power dissipation of 125W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
AVALANCHE RATED
450 mJ
105 A
MTD5P06VT4G
MTD5P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 125mJ EAS, and 0.45 ohm RDS(ON). With a max power dissipation of 40W and operating temp of 175°C, it's suitable for various high-power electronic designs.
125 mJ
5 A
40 W
40
MTD6N15T4G
MTD6N15T4G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, 20A IDM, and 0.3 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A ID. The PLASTIC/EPOXY package features GULL WING terminals and can handle up to 20W power dissipation.
150 V
.3 ohm
-65 Cel
20 W
20 A
NID9N05CLT4G
NID9N05CLT4G by Onsemi is a N-CHANNEL FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
ESD PROTECTED
160 mJ
52 V
.181 ohm
28.8 W
35 A
NTB30N20T4G
NTB30N20T4G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 30A Max ID, and 0.081 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 214W at 175 °C.
200 V
.081 ohm
214 W
90 A
NTB52N10T4G
NTB52N10T4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 52A ID, and 0.03 ohm RDS(ON). Ideal for SWITCHING applications, it features a built-in DIODE and can handle up to 156A IDM. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 178W.
52 A
.03 ohm
178 W
156 A
NTB75N03L09G
NTB75N03L09G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 225A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 150W at 150 °C.
1500 mJ
75 A
.008 ohm
150 W
225 A
NTD12N10T4G
NTD12N10T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 36A Max Pulsed Drain Current, and 0.165 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
75 mJ
.165 ohm
56.6 W
36 A
NTD14N03RG
NTD14N03RG by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 11.4A, min DS breakdown voltage of 25V, and max pulsed drain current of 28A. This MOSFET operates in enhancement mode with a max power dissipation of 20.8W and can withstand temperatures up to 150 °C.
11.4 A
.13 ohm
20.8 W
NTD18N06LG
NTD18N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 54A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in diode. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
72 mJ
.065 ohm
54 A
NTD20N03L27G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 20 A;
288 mJ
.031 ohm
1.75 W
60 A
NTD20N06G
NTD20N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Max ID, and 0.046 ohm Max RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 60A IDM.
170 mJ
.046 ohm
NTD23N03RT4G
NTD23N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 3.8A, Max Pulsed Drain Current of 40A, and Min DS Breakdown Voltage of 25V. This transistor operates in ENHANCEMENT MODE and has a max power dissipation of 22.3W, making it ideal for high-power switching circuits.
3.8 A
.06 ohm
22.3 W
NTD3055L104G
NTD3055L104G by Onsemi is an N-channel power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.104 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount designs with a small outline package style.
.104 ohm
NTD3055L170G
NTD3055L170G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 1.5W and can withstand temperatures up to 175 °C.
.17 ohm
NTD3055L170T4G
NTD3055L170T4G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 27A, and max operating temperature of 175°C. This MOSFET has a package style of small outline and terminal finish in matte tin, suitable for high-power circuit designs.
NTD80N02G
NTD80N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 80A, Min DS Breakdown Voltage of 24V, and Max Pulsed Drain Current of 200A. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
733 mJ
.0058 ohm
200 A
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