Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
2SK3050TL
ROHM
ROHM 2SK3050TL is a N-CHANNEL FET with 600V DS breakdown voltage and 6A IDM. Ideal for switching applications, it features a built-in diode, 5.5ohm RDS(on), and operates in enhancement mode at up to 150°C.
21 mJ
SINGLE WITH BUILT-IN DIODE
600 V
2 A
5.5 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e2
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
20 W
6 A
Not Qualified
FET General Purpose Power
YES
TIN COPPER
GULL WING
SINGLE
10
SWITCHING
SILICON
IPB77N06S3-09
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; No. of Elements: 1;
AVALANCHE RATED
170 mJ
DRAIN
55 V
77 A
.0088 ohm
TO-263AB
e3
175 Cel
245
107 W
308 A
MATTE TIN
STD95NH02LT4
STMicroelectronics
STD95NH02LT4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
LOW THRESHOLD
600 mJ
24 V
80 A
.009 ohm
TO-252
100 W
320 A
STSJ50NH3LL
STSJ50NH3LL by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 50 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management solutions in various electronic devices.
150 mJ
30 V
50 A
12 A
.013 ohm
R-PDSO-G8
e4
8
50 W
48 A
NICKEL PALLADIUM GOLD
DUAL
STB40N20
STB40N20 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, breakdown voltage of 200 V, and power dissipation up to 160 W. Ideal for high-performance power management in compact designs.
230 mJ
200 V
40 A
.045 ohm
160 W
160 A
Matte Tin (Sn)
STB60NF10T4
STB60NF10T4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-performance power management in compact designs.
485 mJ
100 V
.023 ohm
300 W
Matte Tin (Sn) - annealed
30
STL100NH3LL
STL100NH3LL by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 100A IDM, and 0.005 ohm RDS(on). Suitable for surface mount with built-in diode, it operates in enhancement mode up to 150°C.
100 A
25 A
.005 ohm
R-XDSO-N5
3
5
UNSPECIFIED
80 W
NO LEAD
STS3DPF60L
STS3DPF60L by STMicroelectronics is a P-channel MOSFET designed for efficient switching applications. It features a 60V breakdown voltage, 12A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
3 A
.16 ohm
P-CHANNEL
2 W
Other Transistors
STS4C3F60L
STS4C3F60L by STMicroelectronics is a versatile N/P-channel FET designed for efficient switching applications. It features a 60V breakdown voltage, max drain current of 4A, and operates at up to 150 °C. Ideal for compact power management in electronics.
4 A
.065 ohm
N-CHANNEL AND P-CHANNEL
16 A
FDS4141_F085
Fairchild Semiconductor
FDS4141_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.013 ohm Drain-Source On Resistance and can handle up to 1.6W power dissipation at 150°C.
229 mJ
40 V
10.8 A
1.6 W
36 A
IRF6646TR1PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0095 ohm; Minimum DS Breakdown Voltage: 80 V; JESD-609 Code: e4;
80 V
.0095 ohm
R-XDSO-G2
96 A
SILVER NICKEL
SP8K2TB
ROHM SP8K2TB is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 0.047ohm RDS(on), and 150°C max operating temp. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
.047 ohm
24 A
RSQ045N03TR
ROHM's RSQ045N03TR is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 4.5A ID, 0.056ohm RDS(on), and 1.25W Power Dissipation in a SMALL OUTLINE package. Operating at up to 150°C, it suits ENHANCEMENT MODE requirements with GULL WING terminals for surface mount assembly.
4.5 A
.056 ohm
R-PDSO-G6
e1
6
1.25 W
18 A
TIN SILVER COPPER
STD2NK70ZT4
STD2NK70ZT4 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 700V breakdown voltage, 6.4A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
110 mJ
700 V
1.6 A
7 ohm
TO-252AA
45 W
6.4 A
STD5NK52ZD
STD5NK52ZD by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.4 A, a breakdown voltage of 520 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
520 V
4.4 A
1.5 ohm
70 W
17.6 A
STB75N20
STB75N20 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 75 A, breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in compact designs.
205 mJ
75 A
.034 ohm
190 W
300 A
STB8NM60D
STB8NM60D by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 32A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
200 mJ
8 A
1 ohm
32 A
STD4NK50ZD
STD4NK50ZD by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 12A pulsed drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
120 mJ
500 V
2.7 ohm
NTD4804NT4G
Onsemi
NTD4804NT4G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 230A and EAS of 450mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and low 0.0055 ohm RDS(on), it offers high power dissipation up to 93.75W at 175°C.
450 mJ
117 A
14.5 A
.0055 ohm
93.75 W
230 A
NTD5406NG
NTD5406NG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 150A IDM, and 0.01 ohm RDS(on). With a max power dissipation of 100W and operating temperature of 175 °C, it is ideal for high-power switching circuits in various electronic devices.
70 A
.01 ohm
150 A
TIN
NTD5406NT4G
NTD5406NT4G by Onsemi is an N-channel power FET with a 40V DS breakdown voltage and 150A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.01 ohm max RDS(on), and operates in enhancement mode.
12.2 A
300 pF
-55 Cel
NTD5407NG
NTD5407NG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 75A IDM, and 0.026 ohm Drain-Source Resistance. With a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in small outline packages.
38 A
.026 ohm
NTD5407NT4G
NTD5407NT4G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 38A Drain Current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and a low on-resistance of 0.026 ohm.
80 pF
75 W
NTD78N03G
NTD78N03G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 210A IDM, and 0.006 ohm Max RDS(on). The transistor is in ENHANCEMENT MODE and comes in a PLASTIC/EPOXY package with GULL WING terminals.
722.5 mJ
25 V
11.4 A
.006 ohm
210 A
NTHD3100CT3G
NTHD3100CT3G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 3.2A, on-resistance of 0.08 ohm, and max power dissipation of 1.1W. Operating at up to 150 °C, it's a surface-mount transistor in small outline package suitable for various electronic designs.
20 V
3.2 A
2.9 A
.08 ohm
R-XDSO-C8
1.1 W
C BEND
NTHD3100CT3
NTHD3100CT3 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, 20V DS Breakdown Voltage, and 0.08 ohm Drain-Source Resistance. This small outline transistor has a max power dissipation of 1.1W and operates at up to 150 °C temperature.
e0
235
TIN LEAD
NTHD3101FT3G
NTHD3101FT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A IDM, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has DUAL terminals and a built-in diode for efficient power management.
13 A
NTMSD6N303R2SG
NTMSD6N303R2SG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Suitable for surface mount with GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE up to 150 °C.
325 mJ
.032 ohm
30 A
NTQD6968N
NTQD6968N by Onsemi is an N-CHANNEL FET with 20V DS breakdown voltage and 6.2A max drain current. Commonly used for switching applications, it features a common drain configuration, 2 elements with built-in diode, and operates in enhancement mode. The transistor has a 0.03 ohm max on resistance and can handle up to 18A pulsed drain current.
LOGIC LEVEL COMPATIBLE
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.03 ohm
NTB5404NT4G
NTB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 258A IDM, and 0.0045 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages with 175 °C max operating temp.
1000 mJ
136 A
.0045 ohm
167 W
258 A
NTB5405NG
The Onsemi NTB5405NG is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 116A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 280A Pulsed Drain Current, and 0.0058 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
800 mJ
116 A
.0058 ohm
150 W
280 A
NTD25P03LRLG
NTD25P03LRLG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has a max power dissipation of 75W.
NTD4805NT4G
NTD4805NT4G by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 175A, and max operating temperature of 175°C. This MOSFET has a low on-resistance of 0.0074 ohm and can handle a max drain current of 12.6A efficiently in small outline packages.
288 mJ
95 A
12.6 A
.0074 ohm
79 W
175 A
NTD4808NT4G
NTD4808NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 126A and EAS of 144.5mJ, making it suitable for high-power operations. With a 0.0124 ohm Drain-Source On Resistance, this MOSFET can handle up to 9.8A ID efficiently in a SMALL OUTLINE package.
144.5 mJ
63 A
9.8 A
.0124 ohm
54.6 W
126 A
NTD4810NT4G
NTD4810NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 120A and EAS of 98mJ, suitable for high-power operations. With a 0.0157 ohm RDS(ON) and 50W Pdiss, it offers efficient performance in a small outline package.
98 mJ
54 A
8.6 A
.0157 ohm
120 A
NTD4813NT4G
NTD4813NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 90A IDM, and 0.024 ohm RDS(ON). This METAL-OXIDE SEMICONDUCTOR FET comes in a PLASTIC/EPOXY package with GULL WING terminals, ideal for high-current switching circuits.
72 mJ
7.6 A
.024 ohm
90 A
NTMFS4744NT1G
NTMFS4744NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 47.2W and can withstand up to 150 °C operating temperature.
286 mJ
53 A
7 A
.014 ohm
R-PDSO-F5
47.2 W
106 A
Tin (Sn)
FLAT
40
NTMFS4744NT3G
NTMFS4744NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W Power Dissipation, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
NTLGF3402PT1G
NTLGF3402PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 11A IDM, and 0.14 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor operates b/w -55 to 150 °C and features a METAL-OXIDE SEMICONDUCTOR technology.
2.3 A
.14 ohm
S-PDSO-N6
11 A
NTLJS4159NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 30 V; Terminal Form: C BEND;
3.6 A
S-XDSO-C6
SQUARE
28 A
STD36NH02L
STD36NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for compact power management in electronic devices.
STD90N02L
STD90N02L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
360 mJ
60 A
240 A
STK850
STK850 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
1400 mJ
SOURCE
.0035 ohm
R-XDSO-N4
4
5.2 W
STL60NH3LL
STL60NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
.0105 ohm
60 W
64 A
STK800
STK800 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
20 A
.0098 ohm
NILMS4501NR2G
NILMS4501NR2G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 14A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it has a 175 °C Max Operating Temp and 50mJ EAS rating.
50 mJ
CURRENT MIRROR WITH BUILT-IN DIODE
9.5 A
.016 ohm
R-PBCC-N4
CHIP CARRIER
2.7 W
14 A
BOTTOM
NTD4905NT4G
NTD4905NT4G by Onsemi is an N-CHANNEL Power FET with a 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 264A and 0.007 ohm RDS(ON), suitable for high-power operations. This METAL-OXIDE SEMICONDUCTOR FET comes in a PLASTIC/EPOXY package with GULL WING terminals, designed for surface mount installations.
61 mJ
.007 ohm
264 A
NTD4906NT4G
NTD4906NT4G by Onsemi is an N-channel Power FET with a 30V DS breakdown voltage and 223A pulsed drain current, ideal for switching applications. It features a built-in diode, 0.008 ohm max on-resistance, and operates in enhancement mode. The small outline package with gull wing terminals ensures efficient heat dissipation up to 175 °C.
48 mJ
.008 ohm
37.5 W
223 A
FET General Purpose Powers
© 2023 All rights reserved
