Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDS4465_F085
Fairchild Semiconductor
FDS4465_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage and 13.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 175°C.
DRAIN
SINGLE WITH BUILT-IN DIODE
20 V
13.5 A
.0085 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
8
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
2.5 W
50 A
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
30
SWITCHING
SILICON
NTMFS4852NT1G
Onsemi
NTMFS4852NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 310A IDM, and 0.0033 ohm RDS(on). Ideal for SWITCHING applications due to its 155A ID, 360mJ EAS rating, and ENHANCEMENT MODE operation. Suitable for high-power systems requiring efficient power dissipation in a SMALL OUTLINE package.
360 mJ
30 V
155 A
16 A
.0033 ohm
R-PDSO-F6
6
150 Cel
UNSPECIFIED
N-CHANNEL
86.2 W
310 A
FET General Purpose Power
FLAT
NTMFS4852NT3G
NTMFS4852NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 310A and EAS of 360mJ, making it suitable for high-power operations. With 0.0033 ohm RDS(on) and 86.2W Pd, this MOSFET offers efficient performance in a small outline package.
TIN
NTMFS4898NFT3G
NTMFS4898NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 234A and 0.0048 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This MOSFET has a built-in diode, surface mount design, and is suitable for high-current circuitry.
228 mJ
13.2 A
.0048 ohm
R-XDSO-F5
5
NOT SPECIFIED
234 A
Tin (Sn)
NTMFS4899NFT1G
NTMFS4899NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 188A Pulsed Drain Current, and 0.0075 ohm Drain-Source On Resistance. With a max power dissipation of 48W, it operates in temperatures ranging from -55 to 150 °C.
84 mJ
75 A
10.4 A
.0075 ohm
165 pF
R-PDSO-F5
-55 Cel
48 W
188 A
NVD5803NT4G
NVD5803NT4G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. Features include 40V DS Breakdown Voltage, 228A Pulsed Drain Current, and 0.0057 ohm Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
240 mJ
40 V
85 A
.0057 ohm
R-PSSO-G2
2
83 W
228 A
SINGLE
STD10NM50N
STMicroelectronics
STD10NM50N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
143 mJ
500 V
7 A
.63 ohm
TO-252
70 W
28 A
Matte Tin (Sn) - annealed
STH270N4F3-6
STH270N4F3-6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 180A ID, and 0.0017 ohm RDS(on). Ideal for SWITCHING applications, it has a max power dissipation of 300W in a small outline package.
1000 mJ
180 A
.0017 ohm
R-PSSO-G6
245
300 W
720 A
NDD03N60ZT4G
NDD03N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 10A IDM, and 3.6 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in power supplies, motor control, and industrial equipment due to its robust design and performance.
100 mJ
600 V
2.6 A
3.6 ohm
61 W
10 A
FET General Purpose Powers
NDD04N60ZT4G
NDD04N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 20A IDM, and 120mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies or motor control systems.
120 mJ
4.1 A
2 ohm
20 A
NDD05N50ZT4G
NDD05N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 19A IDM, and 130mJ EAS. It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and current capabilities.
130 mJ
3 A
4.7 A
1.5 ohm
19 A
IPB06N03LAG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 25 V; Maximum Drain-Source On Resistance: .0095 ohm;
LOGIC LEVEL COMPATIBLE
225 mJ
25 V
.0095 ohm
TO-263AB
3
350 A
NTLJF3117PTAG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 20 A;
3.3 A
2.3 A
.135 ohm
S-PDSO-N6
1.5 W
NO LEAD
NTMFS4839NT1G
NTMFS4839NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 132A IDM, and 0.0095 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates in SMALL OUTLINE package style.
180.5 mJ
9.5 A
132 A
40
DMG4932LSD-13
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.19 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.015 ohm
1.19 W
40 A
BSC037N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Position: DUAL; JESD-609 Code: e3;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
350 mJ
100 A
21 A
.006 ohm
R-PDSO-F8
69 W
200 A
BSC106N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;
80 mJ
30 A
13 A
.0106 ohm
43 W
120 A
IPB085N06LG
Infineon Technologies' IPB085N06LG is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 320A, and max power dissipation of 188W. This transistor is commonly used for switching applications in various industries.
370 mJ
60 V
80 A
.0082 ohm
188 W
320 A
IPB110N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
280 mJ
78 A
.011 ohm
158 W
312 A
IPB120N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Avalanche Energy Rating (EAS): 280 mJ; No. of Terminals: 2;
AVALANCHE RATED
.0117 ohm
300 A
IPD64CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Operating Temperature: 175 Cel; Transistor Application: SWITCHING;
34 mJ
100 V
17 A
.064 ohm
TO-252AA
44 W
68 A
IPB051NE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
826 mJ
85 V
.0051 ohm
400 A
IPB05CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .0051 ohm; Maximum Pulsed Drain Current (IDM): 400 A;
IPB065N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Qualification: Not Qualified; JESD-609 Code: e3;
530 mJ
.0062 ohm
250 W
IPB08CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .0082 ohm;
262 mJ
95 A
167 W
380 A
IPB08CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Avalanche Energy Rating (EAS): 262 mJ; Maximum Drain Current (Abs) (ID): 95 A;
IPB12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
FAST SWITCHING
154 mJ
67 A
.0126 ohm
125 W
268 A
IPB12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
.0129 ohm
IPB16CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Peak Reflow Temperature (C): 245; Maximum Pulsed Drain Current (IDM): 212 A;
107 mJ
53 A
.0165 ohm
100 W
212 A
IPD12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .0124 ohm; Maximum Drain Current (Abs) (ID): 67 A;
.0124 ohm
IPD16CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Avalanche Energy Rating (EAS): 107 mJ; Package Style (Meter): SMALL OUTLINE;
.016 ohm
IPD25CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Transistor Application: SWITCHING; Case Connection: DRAIN;
65 mJ
35 A
.025 ohm
71 W
140 A
IPD49CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 20 A;
29 mJ
.049 ohm
BSC024N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; No. of Terminals: 8; No. of Elements: 1;
800 mJ
27 A
.0037 ohm
89 W
BSC048N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 200 A;
185 mJ
89 A
63 W
BSC072N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Case Connection: DRAIN; Terminal Form: FLAT;
160 mJ
15 A
.0072 ohm
60 W
160 A
BSC085N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Case Connection: DRAIN; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
14 A
52 W
STD70N03L
STD70N03L by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
LOW THRESHOLD
300 mJ
70 A
.013 ohm
280 A
DMG4812SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Minimum DS Breakdown Voltage: 30 V; Terminal Position: DUAL;
8 A
1.54 W
45 A
DMG8880LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
16.5 A
11 A
.0093 ohm
4.1 W
48 A
DMN3005LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Maximum Drain Current (ID): 14.5 A; Maximum Operating Temperature: 150 Cel;
22 A
14.5 A
.0065 ohm
SQ7415AEN-T1_GE3
Vishay Intertechnology
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 64 A; JESD-30 Code: S-XDSO-C5; Transistor Element Material: SILICON;
26 mJ
.065 ohm
S-XDSO-C5
SQUARE
64 A
C BEND
STB18NM60N
STB18NM60N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
.285 ohm
110 W
52 A
STB200N6F3
STB200N6F3 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
ULTRA-LOW RESISTANCE
918 mJ
.0035 ohm
330 W
480 A
STD12N65M5
STD12N65M5 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for efficient power management in compact designs.
150 mJ
650 V
8.5 A
.43 ohm
34 A
STD14NM50N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Qualification: Not Qualified; Terminal Form: GULL WING;
18 mJ
12 A
.32 ohm
90 W
STD35N3LH5
STD35N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 35 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for compact power management in electronics.
.02 ohm
35 W
STD65N55LF3
STD65N55LF3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with low on-resistance.
55 V
.012 ohm
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