Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.54 W; Minimum DS Breakdown Voltage: 30 V; Terminal Position: DUAL;
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$13.050
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Power Field Effect Transistors (FET) DMG4812SSS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMG4812SSS-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Devices EOL 05/Feb/2019
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
M39029/56351
Esterline Technologies
CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;
2N2222A
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
LL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
EU2B-YS2J03F
Idec
ROTARY SWITCH;
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
OHN3020U
Tt Electronics Plc
OHN3020U by Tt Electronics Plc is a magnetic field sensor with a max supply voltage of 24V and hysteresis of 5mT. It features an output range of 25mA and operates in temperatures ranging from -20 to 85°C. Ideal for applications requiring precise detection and measurement of magnetic fields, such as automotive sensors or industrial automation systems.
Bkc Semiconductors
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
MBRS360T3G
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
IRF7328TRPBF
Infineon Technologies
Infineon's IRF7328TRPBF is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 32A IDM, and 0.021 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic systems requiring efficient power management in compact designs.
FDD7N25LZTM
FDD7N25LZTM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 6.2A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 56W.
IRF7404TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML2502
IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.
IRFP460
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain Current (ID): 20 A; No. of Terminals: 3;
IRF7493TRPBF-1
Power Field-Effect Transistors;
SIRA01DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
IRLR3110ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
G3R350MT12D
Genesic Semiconductor
G3R350MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features a max IDM of 16A and EAS of 43mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and DRAIN case connection, it offers 0.455 ohm RDS(on) and can handle up to 63W power dissipation.
IRF540NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
BSP170PH6327XTSA1
Infineon's BSP170PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 7.6A IDM, and 0.3 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
BSC028N06NSTATMA1
BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
BSP295H6327XTSA1
BSP295H6327XTSA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 7.2A max pulsed drain current. It is used in enhancement mode applications, featuring a built-in diode, 0.5 ohm max RDS(on), and AEC-Q101 standard compliance for automotive electronics.
IRLML6401TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
STP40NF10L
STMicroelectronics
STP40NF10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.036 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C temperature.
SUD50P04-08-GE3
Vishay Intertechnology's SUD50P04-08-GE3 is a P-channel power FET with 40V DS breakdown voltage and 50A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 73.5W.
FDB3632
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 310 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
IRF540STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
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DMG4800LSD-13
DMG4800LSD-13 by Diodes Inc. is a N-CHANNEL FET with 30V DS breakdown voltage, 42A IDM, and 0.016 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
DMG4466SSSL-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.42 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 10 A;
DMG4466SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.42 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMG4413LSS-13
DMG4413LSS-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10.5A Drain Current, 0.0075 ohm On Resistance, and operates in ENHANCEMENT MODE up to 150°C. This surface-mount transistor has a GULL WING terminal form and comes in an 8-terminal package style.
DMG4800LSDQ-13
DMG4800LSDQ-13 by Diodes Inc. is an N-channel Power FET with 30V DS breakdown voltage and 42A max pulsed drain current. Ideal for switching applications, it features a separate configuration with built-in diode, small outline package style, and operates in enhancement mode up to 150°C.
DMG4435SSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMG4407SSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.82 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
DMG4496SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.42 W; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;
DMG4822SSDQ-13
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMG4496SSSQ-13
DMG4932LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.19 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
DMG4511SK4-7
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.9 W; JEDEC-95 Code: TO-252; Transistor Element Material: SILICON;
DMG4468LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.68 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-252AA;
DMG4822SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.42 W; Transistor Element Material: SILICON; Additional Features: HIGH RELIABILITY;
DMG4413LSSQ-13
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
DMG4406LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
DMG4710SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .0125 ohm; Maximum Drain Current (Abs) (ID): 12.7 A;
DMG4712SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.55 W; Maximum Drain-Source On Resistance: .014 ohm; No. of Terminals: 8;
DMG4800LK3-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.71 W; Additional Features: HIGH RELIABILITY; Case Connection: DRAIN;
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