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DMG4407SSS-13

Diodes Incorporated

DMG4407SSS-13 by Diodes Incorporated

DMG4407SSS-13 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features 0.011 ohm RDS(ON), 8.2A ID, and operates at up to 155°C.

Median Price

$0.544

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,270 parts In-Stock

1+ parts

$0.698

100+ parts

$0.283

1k+ parts

$0.196

10k+ parts

$0.159

1,270

$0.698

$0.283

$0.196

$0.159

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.180

20,000

-

-

-

$0.180

Element14

Singapore . 30 parts In-Stock

1+ parts

-

100+ parts

$0.544

1k+ parts

$0.323

10k+ parts

$0.318

30

-

$0.544

$0.323

$0.318

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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20,000

-

-

-

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Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

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1k+ parts

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750

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 12,819 parts In-Stock

1+ parts

$0.153

100+ parts

$0.149

1k+ parts

$0.148

10k+ parts

-

12,819

$0.153

$0.149

$0.148

-

Ampacity Inc.

Singapore . 12,436 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

-

12,436

$0.153

-

-

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Corohmni

South Africa . 19 parts In-Stock

1+ parts

$0.270

100+ parts

-

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-

19

$0.270

-

-

-

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.578

100+ parts

$0.526

1k+ parts

$0.474

10k+ parts

-

200

$0.578

$0.526

$0.474

-

Kepictronics

USA . 27,500 parts In-Stock

1+ parts

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27,500

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Perfect Parts

USA . 5,667 parts In-Stock

1+ parts

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5,667

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Continental Prestige Electronics

USA . 3,406 parts In-Stock

1+ parts

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3,406

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Eastek

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.240

10k+ parts

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2,500

-

-

$0.240

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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Argo Parts USA

USA . 247 parts In-Stock

1+ parts

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247

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Overview

Enhance your power switching applications with the DMG4407SSS-13 by Diodes Incorporated. This high-quality P-Channel Power FET offers customers exceptional value and performance, thanks to its single configuration with built-in diode and enhancement mode operation. Perfect for a wide range of switching tasks, this transistor boasts a maximum drain current of 9.9A and a low on-resistance of just 0.011 ohms. Trust in Diodes Incorporated for reliable, efficient solutions that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for internal components, ensuring reliability and durability.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a negative voltage is required for proper operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and can help reduce component count and overall cost.

Transistor Application: SWITCHING

Optimized for efficient switching operations, making it suitable for power management applications.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

Allows for a wide range of voltage applications, ensuring versatility in usage.

Package Shape: RECTANGULAR

Facilitates easy integration into various circuit layouts and designs.

Terminal Form: GULL WING

Provides strong mechanical support for stable connections and enhanced reliability.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the transistor's conductivity, allowing for efficient power management.

Maximum Pulsed Drain Current (IDM): 80 A

Capable of handling high current loads, making it suitable for demanding applications.

Maximum Drain Current (Abs) (ID): 9.9 A

Provides a high continuous current rating for reliable performance under heavy loads.

No. of Terminals: 8

Offers multiple connection points for enhanced flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 1.82 W

Efficiently dissipates heat to prevent overheating and ensure long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact design helps save space on the circuit board and facilitates dense layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance with low power consumption, making it energy-efficient.

Maximum Operating Temperature: 155 °C

Can operate reliably at elevated temperatures, suitable for industrial applications.

Transistor Element Material: SILICON

Provides good electrical conductivity and reliability for consistent performance.

Terminal Finish: MATTE TIN

Ensures good solderability and corrosion resistance for long-lasting connections.

Maximum Drain Current (ID): 8.2 A

Suitable for applications requiring moderate current handling capabilities.

Maximum Drain-Source On Resistance: 0.011 ohm

Offers low resistance for efficient power transfer and minimal heat generation.

Terminal Position: DUAL

Provides multiple connection options for versatile circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for proper soldering and assembly.

Peak Reflow Temperature °C: 260

Suitable for high-temperature assembly processes, ensuring reliable solder joints.

Technical Specifications

Power Field Effect Transistors (FET) DMG4407SSS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

9.9 A

Maximum Drain Current (ID):

8.2 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

155 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

80 A

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG4407SSS-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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