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SQ7415AEN-T1_GE3

Vishay Intertechnology

SQ7415AEN-T1_GE3 by Vishay Intertechnology

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 64 A; JESD-30 Code: S-XDSO-C5; Transistor Element Material: SILICON;

Median Price

$0.555

Lifecycle Status

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17

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Arrow

USA . 751 parts In-Stock

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Farnell

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Avnet

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Elektronika Sales Private Limited

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TTI Europe

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Verical

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Element14

Singapore . 1 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Flip Electronics

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Cyclops Electronics Ltd

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Vyrian

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Rebound Electronics

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J2 Sourcing AB

Sweden . 5,920 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

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Prism Electronics

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Semicontronic

India . 8,397 parts In-Stock

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$0.292

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$0.285

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Ampacity Inc.

Singapore . 4,131 parts In-Stock

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Argo Parts USA

USA . 1,318 parts In-Stock

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Modulus Dynamics

Lithuania . 14,702 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,105 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Continental Prestige Electronics

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

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Corohmni

South Africa . 136 parts In-Stock

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Andel Nordic

Denmark . 147 parts In-Stock

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AZTECH Wire

Italy . 79 parts In-Stock

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GreenTree Electronics

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S.R.D Solutions

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Futuretech Components

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Glotronic Ltd.

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Perfect Parts

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Infinite Electronics LLP (Excess)

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iodParts Technologies Inc.

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Technical Specifications

Power Field Effect Transistors (FET) SQ7415AEN-T1_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

26 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

16 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XDSO-C5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

64 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

SQ7415AEN-T1_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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