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SQ7415AENW-T1_GE3

Vishay Intertechnology

SQ7415AENW-T1_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQ7415AENW-T1_GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 64A IDM, and 26mJ EAS. Ideal for power applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 53W and small outline package style.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 55,440 parts In-Stock

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$0.363

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$0.363

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Nova Conductors

Japan . 870 parts In-Stock

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$0.602

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$0.602

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Vyrian

USA . 18,747 parts In-Stock

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Sensible Micro Corp

USA . 193 parts In-Stock

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Bristol Electronics

USA . 105 parts In-Stock

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$0.323

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Prism Electronics

USA . 20 parts In-Stock

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Continental Prestige Electronics

USA . 2,405 parts In-Stock

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$0.248

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Ampacity Inc.

Singapore . 18,452 parts In-Stock

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$0.309

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Netroflash

USA . 1,000 parts In-Stock

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$0.602

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$0.572

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$0.560

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$0.602

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$0.560

Advanced Electronics

New Zealand . 10 parts In-Stock

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$1.123

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$1.112

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$1.067

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10

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Andel Nordic

Denmark . 606 parts In-Stock

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$1.621

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$1.556

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$1.556

606

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RC Electronics

USA . 71,110 parts In-Stock

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Futuretech Components

Singapore . 24,000 parts In-Stock

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Perfect Parts

USA . 23,520 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,608 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 1,841 parts In-Stock

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Metaverse IC Inc.

Canada . 1,401 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Overview

Discover the Vishay Intertechnology SQ7415AENW-T1_GE3 Power FET, a top-of-the-line P-CHANNEL transistor with a built-in diode for superior performance. With a small outline package and high power dissipation, this enhancement mode FET is perfect for a wide range of applications. Trust in Vishay's renowned quality and innovation to deliver reliable, efficient solutions. Upgrade your project with the SQ7415AENW-T1_GE3 and experience enhanced power management like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good mechanical strength and thermal properties for enhanced durability and performance.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their lower conduction losses and higher efficiency, making them suitable for various power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow.

Surface Mount: YES

Surface mount technology allows for easy and compact assembly on printed circuit boards.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage ensures reliable operation in applications with varying voltage levels.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor with low power consumption.

Maximum Pulsed Drain Current (IDM): 64 A

High pulsed drain current rating enables the transistor to handle sudden power surges without damage.

Avalanche Energy Rating (EAS): 26 mJ

The high avalanche energy rating ensures protection against voltage spikes and transient events.

Maximum Power Dissipation (Abs): 53 W

High power dissipation capability allows the transistor to handle high power applications without overheating.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes this FET suitable for use in harsh environmental conditions.

Technical Specifications

Power Field Effect Transistors (FET) SQ7415AENW-T1_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

26 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

16 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

105 pF

JESD-30 Code:

S-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

64 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

68 ns

Maximum Turn On Time (ton):

28 ns

Trade Compliance

SQ7415AENW-T1_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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