Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STB18NM60N by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
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$1.213
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IDEA Electronic Components Group
$1.073
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Component Stockers USA
$1.520
$1.450
MKK Technologies
$2.017
DigiPath Technology Company
AZTECH Wire
$12.260
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
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Alle Elektronik GmbH
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RC Electronics
Corphita
Kepictronics
Perfect Parts
Parana Technologies
$1.283
The use of plastic/epoxy provides good dielectric strength and durability, making this FET suitable for various applications.
N-channel configuration typically offers lower on-resistance and higher switching speeds, enhancing overall performance in switching applications.
The built-in diode feature allows for better circuit design flexibility and protection against voltage spikes.
Designed for switching applications, this FET can efficiently handle on/off operations in circuits, making it ideal for power management.
Surface mount technology allows for compact designs, facilitating easier integration into modern electronic devices.
With a high breakdown voltage, this FET is suitable for applications involving high voltage and ensures reliability under stress.
The rectangular shape aids in efficient space utilization on PCBs, making it versatile for various layout designs.
Gull wing terminals provide a stable and reliable connection to the PCB without any additional mounting hardware.
Enhancement mode operation ensures that the transistor remains off until a threshold voltage is applied, improving control over the device.
This high pulsed drain current rating allows the FET to handle intensive, short-duration load conditions without damage.
A good avalanche energy rating signifies that the FET can withstand high energy transients, enhancing durability and reliability.
A maximum drain current of 13 A provides ample capacity for many applications without overheating.
Fewer terminals simplify the PCB design and reduce potential failure points.
High power dissipation capability allows for efficient heat management in high-performance applications.
A small outline package reduces space requirements on the PCB, making it useful for compact devices.
MOSFET technology ensures fast switching speeds and low power loss, making it efficient for various electronic applications.
Operating at a high temperature range allows for reliable performance in demanding environments.
Silicon is widely used in FETs, providing excellent conductivity and proven reliability in electronic applications.
Matte tin terminal finish improves solderability and corrosion resistance, ensuring reliable connections.
A repeat of this spec reinforces the capacity to handle a variety of load conditions efficiently.
Low on-resistance translates to lower heat generation and higher efficiency during operation.
Single terminal position simplifies circuit design and integration into various applications.
A higher temperature tolerance during reflow soldering indicates robust construction that can withstand manufacturing processes.
This peak temperature indicates compatibility with modern surface mount soldering techniques, ensuring easy integration into production.
Power Field Effect Transistors (FET) STB18NM60N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
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STB18NM60N Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Power MOSFET Transistors 29/Jul/2013
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
2N7002
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
LL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
AH180-WG-7
Diodes Incorporated
AH180-WG-7 by Diodes Inc. is a magnetic field sensor with 1.5mT hysteresis, 0.30V output range, and 9mA max operating current. Ideal for applications requiring non-inverting analog voltage output in a compact rectangular package suitable for surface mount installations.
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
BAV99
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Bkc Semiconductors
Vishay Intertechnology
Vishay Intertechnology's LL4148 diode features a max reverse recovery time of 0.004 us, forward voltage of 1 V, and output current of 0.15 A. Ideal for rectification applications in electronics due to its high efficiency and low power dissipation capabilities.
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
ZXMP10A18GTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
FQD11P06TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
SUM70101EL-GE3
Vishay Intertechnology's SUM70101EL-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 240A pulsed drain current. Operating in enhancement mode, it has a max operating temperature of 175°C and low on-resistance of 0.0101 ohm.
FDPF10N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
FDB2710
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; JESD-30 Code: R-XSSO-G2; Package Shape: RECTANGULAR;
IRF7410TRPBF
Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.
FDMS86300DC
FDMS86300DC by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM Pulsed Drain Current, 0.0031 ohm RDS(ON), and 240mJ EAS Avalanche Energy Rating. With a max power dissipation of 125W and operating temperature up to 150°C, it is suitable for high-power switching circuits in various electronic devices.
BSP129H6327XTSA1
Infineon's BSP129H6327XTSA1 is a N-CHANNEL FET with 240V DS Breakdown Voltage and 1.4A IDM. Ideal for DEPLETION MODE operation, it features a built-in diode and 20 ohm Drain-Source On Resistance. Widely used in automotive applications due to AEC-Q101 compliance.
BSC100N06LS3GATMA1
Infineon's BSC100N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a 0.01 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
IRFZ44NSTRL
International Rectifier
IRFZ44NSTRL by International Rectifier is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
BSP315P
BSP315P by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 4.68A and EAS of 24mJ, operating in ENHANCEMENT MODE at up to 150°C. This SMALL OUTLINE transistor has 0.8 ohm RDS(on) and DUAL terminal position for efficient power dissipation.
IRF540PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
IRF7507TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
NDT2955_NL
Fairchild Semiconductor's NDT2955_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 174mJ EAS, and 0.3 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and comes in a SMALL OUTLINE package.
BSC014N04LSIATMA1
Infineon BSC014N04LSIATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 780A IDM, and 0.002 ohm RDS(ON). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in various electronic devices due to its small outline package and high power dissipation capability.
STW11NK100Z
STW11NK100Z by STMicroelectronics is a N-CHANNEL power FET with 1000V DS breakdown voltage. It is used for switching applications, with max drain current of 8.3A and on-resistance of 1.38 ohm.
IPD50P04P4L11ATMA2
Infineon's IPD50P04P4L11ATMA2 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 200A IDM, and 0.0106 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and 58W power dissipation.
IRLR024NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FQP30N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; JESD-609 Code: e3;
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STB11NM80T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 205 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
STB120NF10T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 312 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 120 A;
STB100N10F7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
STB140NF55T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 55 V;
STB18N65M5
STB18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60A IDM, 0.22 ohm RDS(on), and 210mJ EAS. Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for various power electronics designs.
STB11NM60T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
STB13N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G2; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STB12NM50T4
STB12NM50T4 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 48A IDM, and 0.35 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 160W max power dissipation. Suitable for surface mount assembly, it has a max operating temperature of 150°C.
STB19NF20
STB19NF20 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It has a 200V DS Breakdown Voltage, 60A IDM, and 0.16 ohm RDS(on). Operating in ENHANCEMENT MODE, it can handle up to 90W power dissipation. Ideal for high-power switching circuits requiring efficient performance.
STB15N80K5
STB15N80K5 by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has 56A IDM and 14A ID, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.375 ohm Drain-Source On Resistance and can handle up to 190W power dissipation.
STB11N65M5
STB11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 36A IDM, and 0.48 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 85W max power dissipation. Suitable for surface mount design with GULL WING terminals, it can withstand temperatures from -55 to 150 °C.
STB160N75F3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Transistor Application: SWITCHING; No. of Elements: 1;
STB12NK80ZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Maximum Drain Current (ID): 10.5 A; Package Body Material: PLASTIC/EPOXY;
STB10N95K5
STB10N95K5 by STMicroelectronics is a N-CHANNEL FET with 950V DS Breakdown Voltage, 32A IDM, and 0.8 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 122mJ EAS rating.
STB18N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-263AB;
STB13N80K5
STB13N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, 48A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor's package is small outline with gull wing terminals and can handle peak reflow temperatures up to 245°C.
STB100NF03L-03-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): 100 A;
STB18N60DM2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .295 ohm;
STB13NK60ZT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Drain-Source On Resistance: .55 ohm; No. of Terminals: 2;
STB18NM80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
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