Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSP297L6327HTSA1
Infineon Technologies
Infineon's BSP297L6327HTSA1 is a N-CHANNEL FET with 200V DS breakdown voltage and 2.64A IDM. Ideal for automotive applications due to AEC-Q101 standard compliance, it features a built-in diode, small outline package, and low 1.8 ohm RDS(on) for efficient power management.
LOGIC LEVEL COMPATIBLE
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
.66 A
1.8 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G4
1
4
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
2.64 A
AEC-Q101
YES
GULL WING
DUAL
SILICON
BSP298L6327HUSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Form: GULL WING; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
130 mJ
400 V
.5 A
3 ohm
2 A
BSP299L6327HUSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .4 A; No. of Terminals: 4; Package Style (Meter): SMALL OUTLINE;
500 V
.4 A
4 ohm
e3
1.6 A
MATTE TIN
BSP315PL6327HTSA1
Infineon's BSP315PL6327HTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 4.68A IDM, and 0.8 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and built-in diode for efficient power management in compact spaces.
24 mJ
60 V
1.17 A
.8 ohm
P-CHANNEL
4.68 A
BSP317PL6327HTSA1
Infineon Technologies' BSP317PL6327HTSA1 is a P-CHANNEL power FET with a min DS breakdown voltage of 250V. It features a max pulsed drain current of 1.72A and a max drain-source on resistance of 4 ohm. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard compliance.
250 V
.43 A
1.72 A
BSP320SL6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .12 ohm; Maximum Pulsed Drain Current (IDM): 11.6 A; Additional Features: AVALANCHE RATED;
60 mJ
2.9 A
.12 ohm
11.6 A
BSP613PL6327HUSA1
Infineon's BSP613PL6327HUSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.6A IDM, 0.13 ohm RDS(on), and EAS of 150mJ. AEC-Q101 compliant, this MOSFET has GULL WING terminals in a SMALL OUTLINE package.
150 mJ
.13 ohm
SWITCHING
BSP89L6327HTSA1
BSP89L6327HTSA1 by Infineon is a N-CHANNEL Power FET with 240V DS Breakdown Voltage and 6 ohm Drain-Source On Resistance. It features a built-in diode, operates in Enhancement Mode, and has a max IDM of 1.4A. Ideal for automotive applications meeting AEC-Q101 standard.
240 V
.35 A
6 ohm
1.4 A
BSP92PL6327HTSA1
Infineon's BSP92PL6327HTSA1 is a P-CHANNEL FET with 250V DS Breakdown Voltage. It features a built-in diode, 1.04A IDM, and 12Ω RDS(on). Ideal for automotive applications meeting AEC-Q101 standard, it operates in enhancement mode with gull wing terminals in a small outline package.
.26 A
12 ohm
1.04 A
BTS247ZE3062AATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Transistor Application: SWITCHING;
1300 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
55 V
33 A
.028 ohm
R-PSSO-G4
180 A
TIN
SINGLE
BTS282ZE3180AATMA2
BTS282ZE3180AATMA2 by Infineon Technologies is a N-CHANNEL Power FET with 49V DS Breakdown Voltage and 320A IDM. It features a built-in diode, temperature sensor, and operates in enhancement mode for switching applications. This transistor has a max ID of 80A, 0.0095 ohm Drain-Source On Resistance, and is suitable for automotive use (AEC-Q101).
2000 mJ
49 V
80 A
.0095 ohm
R-PSSO-G7
7
320 A
IPB65R065C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 650 V; JESD-30 Code: R-PSSO-G2;
171 mJ
650 V
.065 ohm
TO-263AB
R-PSSO-G2
2
145 A
IPB65R095C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 128 W; Package Shape: RECTANGULAR; Minimum Operating Temperature: -55 Cel;
118 mJ
24 A
.095 ohm
150 Cel
-55 Cel
128 W
100 A
IPD031N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Transistor Element Material: SILICON; No. of Elements: 1;
30 V
90 A
.0044 ohm
TO-252
400 A
IPD040N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 89 A; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
89 A
.0059 ohm
IPD050N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 60 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
50 A
.0073 ohm
350 A
IPD075N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 50 mJ; Maximum Pulsed Drain Current (IDM): 350 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
50 mJ
.0114 ohm
IPD090N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-252; Operating Mode: ENHANCEMENT MODE;
40 mJ
40 A
.0135 ohm
280 A
IPD135N03LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 20 mJ;
20 mJ
30 A
210 A
IPD350N06LGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Additional Features: AVALANCHE RATED; Package Body Material: PLASTIC/EPOXY;
80 mJ
29 A
.035 ohm
116 A
IPD50R380CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 173 mJ; Package Shape: RECTANGULAR;
173 mJ
.38 ohm
32.4 A
IPD50R500CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Terminals: 2; Minimum DS Breakdown Voltage: 500 V;
129 mJ
.5 ohm
IPD50R650CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 102 mJ; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
102 mJ
.65 ohm
19 A
IPD50R800CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; No. of Terminals: 2;
83 mJ
15.5 A
IPD60R520CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 166 mJ; Terminal Form: GULL WING; Terminal Position: SINGLE;
166 mJ
600 V
6.8 A
.52 ohm
17 A
IPD60R750E6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
72 mJ
.75 ohm
15.7 A
IPD65R420CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 227 mJ; JEDEC-95 Code: TO-252;
227 mJ
8.7 A
.42 ohm
27 A
Tin (Sn)
IPD65R660CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
115 mJ
6 A
.66 ohm
IPD90R1K2C3ATMA1
IPD90R1K2C3ATMA1 by Infineon is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 10A IDM, 68mJ EAS, and 1.2 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, AEC-Q101 compliant.
68 mJ
900 V
5.1 A
1.2 ohm
10 A
SPD06N60C3ATMA1
SPD06N60C3ATMA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 600V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 18.6A and a max drain-source on resistance of 0.75 ohm.
HIGH VOLTAGE
200 mJ
6.2 A
TO-252AA
18.6 A
BSP322PL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Pulsed Drain Current (IDM): 4 A; Maximum Operating Temperature: 150 Cel;
57 mJ
100 V
1 A
51 pF
1.8 W
4 A
44.3 ns
13.4 ns
CSD87384MT
Texas Instruments
CSD87384MT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 30V. It is designed for switching applications and has a max pulsed drain current of 95A.
231 mJ
COMPLEX
.0089 ohm
114 pF
R-PBGA-B5
e4
5
GRID ARRAY
260
95 A
Nickel/Palladium/Gold (Ni/Pd/Au)
BUTT
BOTTOM
NTMFS6B05NT3G
Onsemi
NTMFS6B05NT3G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 370A IDM, and 0.008 ohm RDS(on). It is used in power management applications due to its high current handling capability and low on-resistance.
125 mJ
104 A
16 A
.008 ohm
R-PDSO-F5
138 W
370 A
FLAT
30
ZXMP7A17GQTC
Diodes Incorporated
ZXMP7A17GQTC by Diodes Inc. is a P-CHANNEL FET with 70V DS Breakdown Voltage, 9.6A IDM, and 0.16 ohm RDS(ON). Ideal for SWITCHING applications in automotive (AEC-Q101) due to ENHANCEMENT MODE operation and DUAL terminal position.
HIGH RELIABILITY
70 V
2.6 A
.16 ohm
9.6 A
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
.1 ohm
R-PDSO-G6
e6
6
TIN BISMUTH
NTMFS6B14NT3G
NTMFS6B14NT3G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 180A IDM, and 0.015 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Operating from -55 to 150 °C, it's suitable for various enhancement mode power management circuits.
29 mJ
.015 ohm
77 W
HAF1002-90STL-E
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .13 ohm; Minimum DS Breakdown Voltage: 60 V;
15 A
BSB104N08NP3GXUSA1
Infineon BSB104N08NP3GXUSA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 0.0104 ohm RDS(on), and 110mJ EAS rating. Suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology in CHIP CARRIER package style.
110 mJ
80 V
13 A
.0104 ohm
R-MBCC-N3
3
METAL
CHIP CARRIER
200 A
Silver/Nickel (Ag/Ni)
NO LEAD
BSC079N03LSCGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Drain-Source On Resistance: .0127 ohm;
10 mJ
14 A
.0127 ohm
R-PDSO-F8
8
BSC883N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
34 V
.0046 ohm
392 A
BSC889N03LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.009 ohm
BSC889N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; No. of Elements: 1; Maximum Drain Current (ID): 12 A;
12 A
.0091 ohm
R-PDSO-N8
176 A
BSL302SNH6327XTSA1
Infineon Technologies' BSL302SNH6327XTSA1 is a N-CHANNEL Power FET with a min DS Breakdown Voltage of 30V. It has a max Pulsed Drain Current of 28A and an Avalanche Energy Rating of 30mJ. This FET is commonly used in applications requiring high power and efficient switching capabilities.
30 mJ
7.1 A
.025 ohm
28 A
BSO201SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 8;
248 mJ
20 V
14.9 A
R-PDSO-G8
59.6 A
BSO203PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.2 A; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
97 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8.2 A
.021 ohm
32.8 A
BSO203SPNTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 36 A;
9 A
36 A
BSO204PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8; Terminal Form: GULL WING;
63 mJ
7 A
.03 ohm
BSO207PNTMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 44 mJ; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
44 mJ
5.7 A
.045 ohm
22.8 A
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