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BSP92PL6327HTSA1

Infineon Technologies

BSP92PL6327HTSA1 by Infineon Technologies

Infineon's BSP92PL6327HTSA1 is a P-CHANNEL FET with 250V DS Breakdown Voltage. It features a built-in diode, 1.04A IDM, and 12Ω RDS(on). Ideal for automotive applications meeting AEC-Q101 standard, it operates in enhancement mode with gull wing terminals in a small outline package.

Median Price

$0.235

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

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Verical

USA . 3,000 parts In-Stock

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$0.235

3,000

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$0.235

Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.149

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700

$0.149

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Digiode

USA . 764 parts In-Stock

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$0.198

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764

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Chip Stock

USA . 49,620 parts In-Stock

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Vyrian

USA . 8,745 parts In-Stock

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VNN

France . 2,396 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 4,006 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

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$0.144

4,006

$0.149

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-

$0.144

Continental Prestige Electronics

USA . 3,043 parts In-Stock

1+ parts

$0.149

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$0.146

3,043

$0.149

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$0.146

Modulus Dynamics

Lithuania . 8,047 parts In-Stock

1+ parts

$0.149

100+ parts

$0.143

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$0.137

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8,047

$0.149

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$0.137

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Corohmni

South Africa . 651 parts In-Stock

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$0.149

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651

$0.149

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Ampacity Inc.

Singapore . 2,982 parts In-Stock

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$0.177

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2,982

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Semicontronic

India . 2,637 parts In-Stock

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$0.177

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$0.173

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$0.172

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2,637

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Corphita

USA . 116 parts In-Stock

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$0.187

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116

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.808

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$0.735

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$0.663

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350

$0.808

$0.735

$0.663

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Aztec Data Supply Inc.

USA . 166 parts In-Stock

1+ parts

$1.070

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166

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AZTECH Wire

Italy . 771 parts In-Stock

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$19.820

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771

$19.820

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Component Stockers USA

USA . 454 parts In-Stock

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$99.990

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Microchip USA

USA . 472 parts In-Stock

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472

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Bastille Electronics

Australia . 450 parts In-Stock

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Robosynatics

Brazil . 250 parts In-Stock

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$1.162

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$1.076

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$1.076

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$1.076

$1.076

Lucentia Tech

USA . 250 parts In-Stock

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$1.162

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$1.076

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$1.076

250

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$1.162

$1.076

$1.076

Overview

Elevate your power management solutions with the BSP92PL6327HTSA1 by Infineon Technologies. Known for their exceptional quality and innovation, Infineon Technologies delivers top-notch Power Field Effect Transistors (FET) like this P-CHANNEL transistor with a built-in diode for added convenience. Ideal for a wide range of applications, this product offers reliability, efficiency, and superior performance. Experience the value and benefits of Infineon Technologies' cutting-edge technology with the BSP92PL6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: P-CHANNEL

Being a P-channel FET allows for low power consumption and efficient operation in certain circuit configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB, making this FET convenient for compact devices.

Surface Mount: YES

With surface mount capability, this FET can be easily mounted onto PCBs, reducing assembly time and costs.

Minimum DS Breakdown Voltage: 250 V

The high breakdown voltage ensures reliability and protection against voltage spikes, making this FET suitable for industrial applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and orientation on the PCB, enhancing the overall design efficiency.

Terminal Form: GULL WING

The gull wing terminals provide secure soldering connections, ensuring reliable performance in various operating conditions.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enables precise control of the FET's conductivity, improving efficiency in power management applications.

Maximum Pulsed Drain Current (IDM): 1.04 A

With a high pulsed drain current rating, this FET can handle sudden surges in power without compromising performance.

No. of Terminals: 4

The 4 terminals offer flexibility in circuit connections and configurations, making this FET versatile for a range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves valuable space on the PCB, making it ideal for compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology provides efficiency and stability in FET operation, ensuring consistent performance over time.

Transistor Element Material: SILICON

The silicon transistor element material offers high conductivity and heat resistance, increasing the FET's longevity and reliability.

Maximum Drain Current (ID): 0.26 A

The high maximum drain current rating allows for continuous power flow, making this FET suitable for power supply applications.

Maximum Drain-Source On Resistance: 12 ohm

With a low on-resistance value, this FET minimizes power loss and heat generation, improving overall energy efficiency.

Terminal Position: DUAL

The dual terminal position provides additional flexibility in circuit layout and connectivity, enhancing the FET's compatibility with various designs.

Case Connection: DRAIN

The drain case connection simplifies circuit connections and enhances heat dissipation, ensuring optimal performance under high loads.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this FET meets stringent quality and reliability requirements, making it suitable for automotive and industrial applications.

Technical Specifications

Power Field Effect Transistors (FET) BSP92PL6327HTSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

.26 A

Maximum Drain-Source On Resistance:

12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1.04 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSP92PL6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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