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BSP92PH6327XTSA1

Infineon Technologies

BSP92PH6327XTSA1 by Infineon Technologies

Infineon's BSP92PH6327XTSA1 is a P-CHANNEL FET with 250V DS Breakdown Voltage, 1.04A IDM, and 12 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance and built-in diode for efficient power management in small outline packages.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 310 parts In-Stock

1+ parts

$0.531

100+ parts

$0.297

1k+ parts

$0.201

10k+ parts

-

310

$0.531

$0.297

$0.201

-

Distrelec

Netherlands . 2,950 parts In-Stock

1+ parts

$0.789

100+ parts

$0.573

1k+ parts

$0.368

10k+ parts

-

2,950

$0.789

$0.573

$0.368

-

Arrow

USA . 19,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.219

10k+ parts

$0.173

19,000

-

-

$0.219

$0.173

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.186

10k+ parts

$0.168

4,000

-

-

$0.186

$0.168

Chip1Stop

Japan . 2,740 parts In-Stock

1+ parts

-

100+ parts

$0.340

1k+ parts

-

10k+ parts

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2,740

-

$0.340

-

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Newark

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.290

10k+ parts

$0.242

1,000

-

-

$0.290

$0.242

Element14

Singapore . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.180

10k+ parts

$0.180

1,000

-

-

$0.180

$0.180

Rochester

USA . 545 parts In-Stock

1+ parts

-

100+ parts

$0.216

1k+ parts

$0.180

10k+ parts

$0.160

545

-

$0.216

$0.180

$0.160

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 813 parts In-Stock

1+ parts

$0.168

100+ parts

-

1k+ parts

-

10k+ parts

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813

$0.168

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.332

100+ parts

-

1k+ parts

-

10k+ parts

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550

$0.332

-

-

-

TME

Poland . 2,296 parts In-Stock

1+ parts

$0.790

100+ parts

$0.331

1k+ parts

$0.219

10k+ parts

$0.150

2,296

$0.790

$0.331

$0.219

$0.150

Chip Stock

USA . 53,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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53,500

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-

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Vyrian

USA . 5,339 parts In-Stock

1+ parts

-

100+ parts

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5,339

-

-

-

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.749

10k+ parts

$0.674

5,000

-

-

$0.749

$0.674

Rutronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.196

10k+ parts

$0.157

1,000

-

-

$0.196

$0.157

VNN

France . 934 parts In-Stock

1+ parts

-

100+ parts

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934

-

-

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Next Level Components, LLC

USA . 656 parts In-Stock

1+ parts

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100+ parts

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656

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EMSNET

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,304 parts In-Stock

1+ parts

$0.150

100+ parts

$0.146

1k+ parts

$0.146

10k+ parts

-

5,304

$0.150

$0.146

$0.146

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Corphita

USA . 486 parts In-Stock

1+ parts

$0.159

100+ parts

-

1k+ parts

-

10k+ parts

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486

$0.159

-

-

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Corohmni

South Africa . 450 parts In-Stock

1+ parts

$0.303

100+ parts

-

1k+ parts

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450

$0.303

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.325

100+ parts

-

1k+ parts

$0.312

10k+ parts

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2,000

$0.325

-

$0.312

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Ampacity Inc.

Singapore . 5,550 parts In-Stock

1+ parts

$0.327

100+ parts

-

1k+ parts

-

10k+ parts

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5,550

$0.327

-

-

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Argo Parts USA

USA . 2,950 parts In-Stock

1+ parts

$0.332

100+ parts

-

1k+ parts

-

10k+ parts

$0.322

2,950

$0.332

-

-

$0.322

Modulus Dynamics

Lithuania . 13,799 parts In-Stock

1+ parts

$0.500

100+ parts

$0.480

1k+ parts

$0.460

10k+ parts

-

13,799

$0.500

$0.480

$0.460

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Advanced Electronics

New Zealand . 27 parts In-Stock

1+ parts

$0.519

100+ parts

$0.493

1k+ parts

$0.493

10k+ parts

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27

$0.519

$0.493

$0.493

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Aztec Data Supply Inc.

USA . 7,700 parts In-Stock

1+ parts

$0.580

100+ parts

-

1k+ parts

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10k+ parts

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7,700

$0.580

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-

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Metaverse IC Inc.

Canada . 60,000 parts In-Stock

1+ parts

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100+ parts

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60,000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,675 parts In-Stock

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26,675

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Perfect Parts

USA . 20,429 parts In-Stock

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20,429

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

-

-

-

-

Continental Prestige Electronics

USA . 4,330 parts In-Stock

1+ parts

-

100+ parts

$0.356

1k+ parts

$0.225

10k+ parts

$0.211

4,330

-

$0.356

$0.225

$0.211

GreenTree Electronics

Israel . 680 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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680

-

-

-

-

Overview

Experience the power of innovation with the BSP92PH6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Power Field Effect Transistors (FET) that provide reliable performance and enhanced efficiency. Whether you're looking to enhance your electronic devices or optimize power management systems, this P-CHANNEL transistor with built-in diode offers unparalleled value and benefits. Trust in the expertise of Infineon Technologies to take your applications to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for easy integration into circuits that require P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, reducing the need for additional components.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort.

Minimum DS Breakdown Voltage: 250 V

Provides a high level of voltage protection, suitable for high-power applications.

Package Shape: RECTANGULAR

Allows for efficient use of space on the PCB.

Terminal Form: GULL WING

Facilitates easy soldering and component placement during assembly.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the FET's operation for optimal performance.

Maximum Pulsed Drain Current (IDM): 1.04 A

Supports reliable operation under peak load conditions.

No. of Terminals: 4

Provides the necessary connections for the FET to function effectively in the circuit.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB, allowing for denser circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and reliability in switching applications.

Transistor Element Material: SILICON

Provides good thermal conductivity and performance characteristics.

Terminal Finish: TIN

Ensures reliable electrical connections for optimal FET performance.

Maximum Drain Current (ID): 0.26 A

Suitable for low to medium power applications, ensuring efficient operation.

Maximum Drain-Source On Resistance: 12 ohm

Offers low resistance for improved efficiency and reduced power losses.

Terminal Position: DUAL

Allows for versatile installation and compatibility with various circuit layouts.

Case Connection: DRAIN

Provides easy access to the drain terminal for connection to external components.

Maximum Time At Peak Reflow Temperature (s): 40

Ensures proper soldering and connection reliability during assembly.

Peak Reflow Temperature °C: 260

Meets industry standards for reflow soldering processes.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability.

Technical Specifications

Power Field Effect Transistors (FET) BSP92PH6327XTSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

.26 A

Maximum Drain-Source On Resistance:

12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

1.04 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

BSP92PH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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