Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVMFS6B14NLWFT3G
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3; No. of Elements: 1;
29 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
.019 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
140 A
AEC-Q101
YES
MATTE TIN
FLAT
DUAL
30
SILICON
NVMFS6B14NT1G
NVMFS6B14NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 100V DS breakdown voltage, and 140A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics and industrial control systems.
55 A
11 A
.015 ohm
175 Cel
-55 Cel
94 W
NVMFS6B14NT3G
NVMFS6B14NT3G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS6B14NWFT1G
NVMFS6B14NWFT1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
NVMFS6B14NWFT3G
NVMFS6B14NWFT3G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 140A IDM, and 0.015 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
STL20NF06LAG
STMicroelectronics
STL20NF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at temperatures from -55 °C to 175 °C. Ideal for power management in compact designs.
210 mJ
60 V
20 A
.05 ohm
NOT SPECIFIED
75 W
80 A
SWITCHING
STL58N3LLH5
STL58N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 64 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for automotive and industrial uses, it ensures reliable performance under extreme temperatures.
150 mJ
30 V
64 A
.0112 ohm
62.5 W
224 A
VNV35N07-E
VNV35N07-E by STMicroelectronics is a robust N-channel FET designed for high-efficiency applications. It features a max drain current of 35 A, breakdown voltage of 60 V, and low on-resistance of 0.035 Ω. Ideal for power management in automotive and industrial systems.
COMPLEX
35 A
.035 ohm
R-PDSO-G10
10
125 W
GULL WING
1350 ns
800 ns
NVMFS5C670NLT3G
NVMFS5C670NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 0.0088 ohm RDS(on), and 440A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in diode.
166 mJ
.0088 ohm
440 A
Matte Tin (Sn) - annealed
NVMFS5C670NLWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 166 mJ; Minimum DS Breakdown Voltage: 60 V; Case Connection: DRAIN;
NVMFS5C670NLWFT3G
NVMFS5C670NLWFT3G by Onsemi is a N-channel Power FET with 60V DS Breakdown Voltage, 0.0088 ohm RDS(on), and 440A IDM. Ideal for automotive applications due to AEC-Q101 compliance and high EAS of 166mJ. Features single configuration with built-in diode in small outline package.
STL20DNF06LAG
STL20DNF06LAG by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and low on-resistance of 0.05 Ω. Ideal for automotive and power management systems, it ensures reliable performance in compact designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-PDSO-F6
2
6
NVATS5A106PLZT4G
NVATS5A106PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 30mJ, suitable for high-power operations. With an operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.
30 mJ
40 V
33 A
.025 ohm
R-PSSO-G2
e6
P-CHANNEL
48 W
100 A
TIN BISMUTH
SINGLE
NVATS5A112PLZT4G
NVATS5A112PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 81A IDM, 50mJ EAS, and 0.043 ohm RDS(ON). Package: PLASTIC/EPOXY, GULL WING terminals, AEC-Q101 compliant.
50 mJ
27 A
.043 ohm
81 A
NVMFS5C423NLT1G
NVMFS5C423NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 900A Max Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive systems or industrial equipment.
280 mJ
150 A
.003 ohm
83 W
900 A
NVMFS5C423NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain-Source On Resistance: .003 ohm; Package Body Material: PLASTIC/EPOXY;
NVMFS5C423NLWFT1G
NVMFS5C423NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics meeting AEC-Q101 standards.
NVMFS5C423NLWFT3G
NVMFS5C423NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.003 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance and 175 °C max operating temp.
STD19N3LLH6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum Operating Temperature: -55 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
130 mJ
10 A
TO-252
30 W
40 A
STH290N4F6-2AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
180 A
.0017 ohm
720 A
STH290N4F6-6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Minimum Operating Temperature: -55 Cel;
R-PSSO-G6
300 W
STL120N4LF6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 96 W; Maximum Feedback Capacitance (Crss): 373 pF; Maximum Drain Current (ID): 55 A;
BULK: 3000
200 mJ
.0045 ohm
373 pF
R-PDSO-F8
8
96 W
220 A
FDMS86380_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDMS86380_F085 is a N-CHANNEL Power FET for SWITCHING applications. With 80V DS Breakdown Voltage, it offers 50A Drain Current and 75W Power Dissipation. Ideal for ENHANCEMENT MODE operations in various electronic devices.
AVALANCHE ENERGY RATED
16 mJ
80 V
50 A
13.4 ohm
14 pF
R-PDSO-N5
NO LEAD
30 ns
31 ns
FDB86569_F085
Fairchild Semiconductor's FDB86569_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 94W Power Dissipation, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has an Avalanche Energy Rating of 41mJ and withstands temperatures up to 175°C.
41 mJ
.0056 ohm
TO-263AB
245
45 ns
53 ns
NTMFS5H400NLT1G
NTMFS5H400NLT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0011 ohm RDS(on). Ideal for power applications due to its 160W Pdiss, -55 to 150°C operating temp range, and DUAL terminal position.
360 mJ
330 A
.0011 ohm
87 pF
150 Cel
160 W
NVATS5A304PLZT4G
NVATS5A304PLZT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 480A IDM, 656mJ EAS, and 0.0089 ohm Drain-Source On Resistance. With a max power dissipation of 108W and operating temperature range from -55 to 175 °C, it is suitable for high-power switching applications in automotive electronics.
656 mJ
120 A
.0089 ohm
108 W
480 A
CSD16415Q5T
Texas Instruments
CSD16415Q5T by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0018 ohm Drain-Source On Resistance. Suitable for high-power electronics requiring efficient switching capabilities.
AVALANCHE RATED
500 mJ
25 V
38 A
.0018 ohm
230 pF
200 A
CSD18535KTTT
CSD18535KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
616 mJ
.0029 ohm
31 pF
R-PSSO-G3
3
400 A
CSD18535KTT
CSD18535KTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 175°C temperature making it suitable for high-power electronic devices.
CSD18536KTTT
CSD18536KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0022 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
819 mJ
.0022 ohm
51 pF
CSD18542KTTT
CSD18542KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
281 mJ
.0051 ohm
CSD19505KTTT
CSD19505KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a DS Breakdown Voltage of 80V, IDM of 400A, and EAS of 510mJ. With an operating range from -55 to 175 °C, it features a Drain connection and 0.0038 ohm On Resistance.
510 mJ
.0038 ohm
34 pF
SI4880DY-T1-GE3
Vishay Intertechnology
SI4880DY-T1-GE3 by Vishay Intertechnology is a N-channel Power FET with 30V DS breakdown voltage and 13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode.
13 A
.0085 ohm
R-PDSO-G8
2.5 W
FET General Purpose Powers
SUM90140E-GE3
Vishay Intertechnology's SUM90140E-GE3 is a N-channel FET with 200V DS breakdown voltage and 240A max pulsed drain current. Ideal for switching applications, it features 0.018 ohm max RDS(on) and 180mJ EAS rating. The transistor operates in enhancement mode, has a gull wing terminal form, and comes in a small outline package style.
180 mJ
200 V
90 A
.018 ohm
240 A
HP8S36TB
ROHM
ROHM HP8S36TB is a N-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 48A and 0.0133 ohm RDS(on). With a small outline package style, it operates in enhancement mode at peak reflow temp of 260°C.
5.3 mJ
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
12 A
.0133 ohm
48 A
CSD19538Q3A
CSD19538Q3A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 37A Pulsed Drain Current, and 0.072 ohm Drain-Source On Resistance. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and comes in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
8.1 mJ
4.9 A
.072 ohm
16.4 pF
37 A
IPD70R2K0CEAUMA1
Infineon Technologies
IPD70R2K0CEAUMA1 by Infineon Technologies is a N-CHANNEL FET with 700V DS breakdown voltage, 6.3A IDM, and 2 ohm RDS(on). It is used for switching applications in enhancement mode with built-in diode. The transistor features a gull wing terminal form, operates in avalanche energy rating of 11mJ, and has a small outline package style.
11 mJ
700 V
2 ohm
6.3 A
TIN
STH272N6F7-6AG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 333 W; Maximum Drain-Source On Resistance: .0015 ohm; JESD-30 Code: R-PSSO-G6;
1900 mJ
.0015 ohm
333 W
STS9P3LLH6
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 9 A;
9 A
.0225 ohm
2.7 W
36 A
STH410N4F7-6AG
STH410N4F7-6AG by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 200 A, a breakdown voltage of 40 V, and operates at temperatures up to 175 °C. Ideal for power management in automotive and industrial systems.
BULK: 1000
390 pF
365 W
800 A
NTMFS4C020NT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 161 W; No. of Elements: 1; No. of Terminals: 5;
862 mJ
370 A
.00095 ohm
350 pF
161 W
NTMFS4C022NT3G
NTMFS4C022NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 352A Pulsed Drain Current. Ideal for applications requiring high power efficiency, such as power supplies and motor control systems. Operating in Enhancement Mode, it offers low 0.0024 ohm Drain-Source Resistance for improved performance.
549 mJ
136 A
.0024 ohm
67 pF
352 A
TPCA8051-H(T2L1,VM
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .0098 ohm; Transistor Application: SWITCHING;
255 mJ
28 A
.0098 ohm
S-PDSO-F5
SQUARE
84 A
SIR871DP-T1-GE3
Vishay Intertechnology's SIR871DP-T1-GE3 is a P-CHANNEL FET with 100V DS Breakdown Voltage and 300A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.02 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE.
61 mJ
.02 ohm
300 A
AUIRFR2607ZTRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Reference Standard: AEC-Q101; Case Connection: DRAIN;
ULTRA LOW RESISTANCE
96 mJ
75 V
42 A
.022 ohm
TO-252AA
IRFH7885TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0039 ohm; Minimum DS Breakdown Voltage: 80 V;
202 mJ
22 A
.0039 ohm
250 A
IRFH7187TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 100 V; Package Shape: RECTANGULAR;
493 mJ
18 A
.006 ohm
210 A
AUIRFS4127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Reference Standard: AEC-Q101; Minimum Operating Temperature: -55 Cel;
FAST SWITCHING, ULTRA-LOW RESISTANCE
250 mJ
72 A
375 W
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