Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTD4913NT4G
Onsemi
NTD4913NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 132A and 0.015 ohm Drain-Source Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
22 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
7.7 A
.015 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
132 A
Not Qualified
YES
TIN
GULL WING
SINGLE
SWITCHING
SILICON
NTMFS4833NT1G
NTMFS4833NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). Operating at 150°C max temp, it has a power dissipation of 125W in a small outline package.
612.5 mJ
191 A
16 A
.003 ohm
R-PDSO-F5
5
150 Cel
260
125 W
288 A
FET General Purpose Power
MATTE TIN
FLAT
DUAL
30
NTMFS4833NT3G
NTMFS4833NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). With a max power dissipation of 125W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
NTMFS4837NT1G
NTMFS4837NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 148A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W power dissipation and ENHANCEMENT MODE operation at up to 150 °C.
242 mJ
74 A
10 A
.0075 ohm
R-PDSO-F6
6
47.2 W
148 A
Tin (Sn)
40
BSB017N03LX3G
Infineon Technologies
Infineon's BSB017N03LX3G is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 225mJ EAS, and 0.0017 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 57W and operates b/w -40 to 150 °C.
225 mJ
147 A
.0017 ohm
R-MBCC-N3
3
-40 Cel
METAL
CHIP CARRIER
57 W
400 A
NO LEAD
BOTTOM
BSC091N03MSCG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V;
10 mJ
12 A
.0091 ohm
R-PDSO-F8
8
176 A
BSC119N03MSCG
BSC119N03MSCG by Infineon Technologies is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. It features a max IDM of 156A and 0.0119 ohm Drain-Source On Resistance, suitable for SWITCHING applications. This MOSFET operates in ENHANCEMENT MODE, with an EAS of 10mJ and can handle up to 11A Drain Current at a max temp of 150°C.
11 A
.0119 ohm
156 A
FQD12P10TM_F085
Fairchild Semiconductor
FQD12P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 37.6A and EAS of 370mJ, suitable for SWITCHING applications in ENHANCEMENT MODE operation. This transistor features a 0.29 ohm Drain-Source On Resistance and operates at up to 150°C temperature.
370 mJ
100 V
9.4 A
.29 ohm
P-CHANNEL
50 W
37.6 A
AEC-Q101
Other Transistors
Matte Tin (Sn)
IRF7749L2TR1PBF
International Rectifier
IRF7749L2TR1PBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage. It has a max IDM of 800A, making it suitable for SWITCHING applications. With an EAS of 260mJ and 0.0015 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175°C.
260 mJ
60 V
375 A
33 A
.0015 ohm
R-XBCC-N9
e1
9
UNSPECIFIED
800 A
FET General Purpose Powers
TIN SILVER COPPER
NCV8440STT1G
NCV8440STT1G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 10A IDM, and 0.95 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is RECTANGULAR with GULL WING terminals, suitable for surface mount installation.
110 mJ
52 V
2.6 A
.95 ohm
TO-261AA
R-PDSO-G3
NCV8440STT3G
NCV8440STT3G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 10A, and max operating temperature of 150 °C. This MOSFET has a package style of small outline and terminal finish in matte tin, suitable for power management systems.
NTB6411ANG
NTB6411ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). It is used in applications requiring high power dissipation up to 217W, such as power supplies and motor control systems.
470 mJ
77 A
72 A
.014 ohm
217 W
285 A
NTB6411ANT4G
NTB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package.
NTB6412ANT4G
NTB6412ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). It is used in applications requiring high power dissipation up to 167W, such as power supplies and motor control systems.
300 mJ
58 A
.0182 ohm
167 W
240 A
NTB6448ANG
NTB6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.
500 mJ
76 A
.013 ohm
188 W
305 A
NTB6448ANT4G
NTB6448ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 305A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include built-in diode, 0.013 ohm RDS(on), and 175 °C max operating temp.
SQ2319ES-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SQ2319ES-T1-GE3 is a P-channel FET with 40V DS breakdown voltage, 30A IDM, and 0.082 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 175°C, it offers high power dissipation of 3W.
1.8 mJ
40 V
3.3 A
.082 ohm
TO-236
3 W
30 A
STB76NF75
STMicroelectronics
STB76NF75 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. The transistor has a built-in diode, GULL WING terminals, and can handle up to 80A drain current.
700 mJ
75 V
80 A
.011 ohm
TO-263AB
245
300 W
320 A
STB76NF80
STB76NF80 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features an 80V breakdown voltage, 320A pulsed drain current, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
80 V
STD70NS04ZL
STD70NS04ZL by STMicroelectronics is a N-CHANNEL Power FET with 33V DS Breakdown Voltage and 280A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 110W and can handle up to 70A ID.
650 mJ
33 V
70 A
.0125 ohm
TO-252
110 W
280 A
Matte Tin (Sn) - annealed
STL23NM60ND
STL23NM60ND by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 78A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
600 V
19.5 A
.18 ohm
S-XDSO-N4
4
SQUARE
150 W
78 A
STL60N32N3LL
STL60N32N3LL by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.
SERIES, 2 ELEMENTS
60 A
32 A
.12 ohm
R-PDSO-N4
48 A
STS15N4LLF5
STS15N4LLF5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 15 A, a breakdown voltage of 40 V, and low on-resistance of 0.0083 Ω. Ideal for compact power management in electronics.
1090 mJ
15 A
.0083 ohm
R-PDSO-G8
e4
63.6 A
NICKEL PALLADIUM GOLD
STS1DN45K3
STS1DN45K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 450V breakdown voltage, 2A max pulsed drain current, and operates at up to 150 °C. Ideal for compact power management in electronic devices.
SEPARATE, 2 ELEMENTS
450 V
.5 A
3.8 ohm
1.7 W
2 A
STB13NM60N
STB13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.36 ohm RDS(on) and 90W Pdiss. Suitable for surface mount, it has a max operating temperature of 150°C.
200 mJ
.36 ohm
90 W
44 A
STB95N3LLH6
STB95N3LLH6 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
150 mJ
.007 ohm
70 W
STD120N4F6
STD120N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 110W and can withstand temperatures up to 175°C.
394 mJ
.004 ohm
STD27N3LH5
STD27N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 27 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact surface mount design ensures versatility in various electronic circuits.
50 mJ
27 A
.028 ohm
30 W
108 A
STS12N3LLH5
STS12N3LLH5 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 12 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact design ensures efficient performance in surface mount configurations.
.0097 ohm
2.7 W
STS20N3LLH6
STS20N3LLH6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 20 A, a breakdown voltage of 30 V, and low on-resistance of 0.0075 Ω. Ideal for compact power management in electronics.
ULTRA-LOW RESISTANCE
20 A
STS5N15F3
STS5N15F3 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.057 ohm RDS(on), and operates in ENHANCEMENT MODE up to 150°C.
150 V
5 A
.057 ohm
2.5 W
CSD16322Q5C
Texas Instruments
CSD16322Q5C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE.
AVALANCHE RATED
125 mJ
25 V
97 A
R-PDSO-N8
-55 Cel
3.1 W
136 A
SI4890BDY-T1-GE3
SI4890BDY-T1-GE3 by Vishay Intertechnology is a N-channel Power FET with 30V DS breakdown voltage and 16A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max pulsed drain current of 60A. Suitable for surface mount with Gull Wing terminals, this MOSFET has an operating temperature of up to 150°C.
20 mJ
.012 ohm
SQD50N04-09H-GE3
Vishay Intertechnology's SQD50N04-09H-GE3 is a N-channel Power FET with 40V DS breakdown voltage and 50A max drain current. Ideal for applications requiring high power dissipation, such as in power supplies or motor control systems. Features include built-in diode, small outline package style, and matte tin terminal finish.
76 mJ
50 A
.009 ohm
83.3 W
100 A
STB50N25M5
STB50N25M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 28 A, a breakdown voltage of 250 V, and operates at up to 150 °C. Ideal for efficient power management in compact designs.
350 mJ
250 V
28 A
.065 ohm
112 A
STB70N10F4
STB70N10F4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 65 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
120 mJ
65 A
.0195 ohm
260 A
STD55N4F5
STD55N4F5 by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
100 mJ
55 A
.0085 ohm
NOT SPECIFIED
60 W
220 A
STD78N75F4
STD78N75F4 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
185 mJ
STL17N3LLH6
STL17N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 17 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs with its no-lead surface mount package.
17 A
.0073 ohm
S-XDSO-N8
68 A
STL25N15F4
STL25N15F4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 6 A, a breakdown voltage of 150 V, and operates at temperatures up to 150 °C. Ideal for compact designs, it comes in a small outline package with built-in diode functionality.
6 A
.063 ohm
R-PDSO-N5
80 W
24 A
STL90N3LLH6
STL90N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 96A IDM, and 0.0073 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 60W power dissipation. This RECTANGULAR package has DUAL terminals and can withstand up to 150°C operating temperature.
90 A
R-XDSO-N5
96 A
STS11N3LLH5
STS11N3LLH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 11 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
.019 ohm
Nickel/Palladium/Gold (Ni/Pd/Au)
SUD45P03-09-GE3
Vishay Intertechnology's SUD45P03-09-GE3 is a P-channel Power FET with 30V DS breakdown voltage and 45A max drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 41.7W and operating temperature up to 150°C, this MOSFET offers high performance in a small outline package.
61 mJ
45 A
.0087 ohm
41.7 W
DMG4435SSS-13
Diodes Incorporated
DMG4435SSS-13 by Diodes Incorporated is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 0.016 ohm RDS(on), and operates in ENHANCEMENT MODE. With a max temp of 150°C, this transistor is surface mountable and has a small outline package style.
7.3 A
.016 ohm
1.3 W
DMG4710SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .0125 ohm; Maximum Drain Current (Abs) (ID): 12.7 A;
HIGH RELIABILITY
12.7 A
8.8 A
1.5 W
DMG4712SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.55 W; Maximum Drain-Source On Resistance: .014 ohm; No. of Terminals: 8;
11.2 A
1.55 W
63 A
DMG8880LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.43 W; Minimum DS Breakdown Voltage: 30 V; Maximum Pulsed Drain Current (IDM): 80 A;
11.6 A
.01 ohm
1.43 W
IPD60R950C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
46 mJ
4.4 A
37 W
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