Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTB18N06LG
Onsemi
NTB18N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 45A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.1 ohm RDS(on), and 48.4W Pdiss in a small outline package.
LOGIC LEVEL COMPATIBLE
61 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
15 A
.1 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
48.4 W
45 A
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
SINGLE
SWITCHING
SILICON
NTB35N15G
NTB35N15G by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 111A Pulsed Drain Current, and 0.05 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 178W in a small outline package.
700 mJ
150 V
37 A
.05 ohm
150 Cel
178 W
111 A
NTB4302T4G
NTB4302T4G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0093 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE at up to 150 °C, it offers high power dissipation of 80W.
722 mJ
30 V
74 A
.0093 ohm
80 W
175 A
30
NTB45N06G
NTB45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 240mJ Avalanche Energy Rating.
240 mJ
.026 ohm
125 W
150 A
NTB45N06T4G
NTB45N06T4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 45A Max ID, and 0.026 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W and can handle up to 150A IDM.
FET General Purpose Powers
MATTE TIN
NTB60N06LG
NTB60N06LG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.016 ohm RDS(on), and 150W Pdiss. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power electronics.
454 mJ
60 A
.016 ohm
150 W
180 A
NTB60N06LT4G
NTB60N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 180A, EAS of 454mJ, and ID of 60A. With a 0.016 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power circuits.
NTB75N03RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74.4 W; Maximum Pulsed Drain Current (IDM): 225 A; No. of Elements: 1;
71.7 mJ
25 V
9.7 A
75 A
.013 ohm
74.4 W
225 A
NTB85N03G
NTB85N03G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 85A Max ID. Ideal for SWITCHING applications, it features a built-in diode, 45A IDM, and 0.0068 ohm RDS(on). Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.
85 A
.0068 ohm
NTB85N03T4G
NTB85N03T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 85A ID, and 0.0068 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, 45A IDM, and 80W Pd. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package.
NTB90N02G
NTB90N02G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. Ideal for SWITCHING applications due to its 85W Pdiss, EAS of 733mJ, and -55 °C to +150°C operating temp range. Package style: SOIC with Gull Wing terminals.
733 mJ
24 V
90 A
.0058 ohm
85 W
200 A
NTB90N02T4G
NTB90N02T4G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. It's used for SWITCHING applications due to its 85W Pdiss, 733mJ EAS, and ENHANCEMENT MODE operation.
NTD18N06G
NTD18N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.5W in a small outline package style.
72 mJ
18 A
.06 ohm
1.5 W
54 A
NTD18N06T4G
NTD18N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and a built-in DIODE in a PLASTIC/EPOXY package.
NTD20N06LG
NTD20N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W.
128 mJ
20 A
.048 ohm
60 W
NTD24N06LG
NTD24N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 24A Drain Current, and 0.045 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 175 °C.
162 mJ
24 A
.045 ohm
-55 Cel
1.36 W
72 A
NTD30N02G
NTD30N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 30A Drain Current, and 0.0145 ohm On Resistance. With a max power dissipation of 75W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
50 mJ
30 A
.0145 ohm
75 W
100 A
NTD32N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93.75 W; Maximum Drain-Source On Resistance: .028 ohm; Avalanche Energy Rating (EAS): 313 mJ;
313 mJ
32 A
.028 ohm
93.75 W
NTMD2C02R2G
NTMD2C02R2G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 5.2A, 0.043 ohm RDS(on), and 48A pulsed drain current. Ideal for switching applications in small outline packages, operating at up to 150 °C peak reflow temp.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5.2 A
.043 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
2 W
48 A
Other Transistors
DUAL
NTMD2P01R2G
NTMD2P01R2G by Onsemi is a P-CHANNEL FET with 16V DS breakdown voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for switching applications in small outline packages with 8 terminals.
350 mJ
16 V
2.3 A
P-CHANNEL
.71 W
9 A
Tin (Sn)
40
NTMSD6N303R2G
NTMSD6N303R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
325 mJ
6 A
.032 ohm
3
NTQD6968NR2G
NTQD6968NR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 18A IDM, and 0.03 ohm RDS(on). Commonly used for SWITCHING applications due to its COMMON DRAIN configuration. It comes in a small outline package with GULL WING terminals.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
7 A
6.2 A
.03 ohm
1.8 W
IXTY1R6N50P
IXYS Corporation
IXYS Corporation's IXTY1R6N50P is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it has 2.5A max pulsed drain current and 6.5 ohm max drain-source resistance. Suitable for enhancement mode operation at up to 150°C, this MOSFET offers high performance in compact small outline package style.
AVALANCHE RATED
75 mJ
500 V
1.6 A
6.5 ohm
TO-252AA
2.5 A
10
SIHF9640S-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHF9640S-GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A Max IDM, 700mJ EAS, and 0.5 ohm RDS(ON). With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150°C.
200 V
11 A
.5 ohm
TO-263AB
44 A
SQJ962EP-T1-GE3
Vishay Intertechnology's SQJ962EP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 32A IDM, and 0.06 ohm RDS(on). Ideal for power management applications requiring high drain current handling in compact designs. Operates in enhancement mode with built-in diode elements, suitable for surface mount assembly with Gull Wing terminals.
5 mJ
8 A
R-PSSO-G4
4
25 W
NTD50N03RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; JESD-609 Code: e3;
20 mJ
7.8 A
.014 ohm
NTD50N03RT4
NTD50N03RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 180A, Min DS Breakdown Voltage of 25V, and Max Drain Current of 7.8A. The transistor has a built-in diode and operates in ENHANCEMENT MODE, making it ideal for high-power switching circuits.
e0
235
TIN LEAD
NTD50N03R
NTD50N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 7.8A, Max Pulsed Drain Current of 180A, and Min DS Breakdown Voltage of 25V. The transistor is in ENHANCEMENT MODE and has a built-in DIODE, making it ideal for high-power switching circuits.
NTD6600NT4G
NTD6600NT4G by Onsemi is an N-CHANNEL Power FET with 100V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a 0.146 ohm Drain-Source Resistance and 72mJ Avalanche Energy Rating. Suitable for ENHANCEMENT MODE operation in various electronic devices.
100 V
12 A
.146 ohm
NTD6600NT4
NTD6600NT4 by Onsemi is an N-channel Power FET with a 100V DS breakdown voltage and 44A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.146 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this MOSFET has a small outline package style.
NTD6600N
NTD6600N by Onsemi is a Power FET with 100V DS Breakdown Voltage, 44A IDM, and 0.146 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in avalanche energy rating of 72mJ. This N-channel transistor is surface mountable with Gull Wing terminals.
STB21NM50N
STMicroelectronics
STB21NM50N by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 72A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
480 mJ
.19 ohm
140 W
STB21NM60N
STB21NM60N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
610 mJ
600 V
17 A
.22 ohm
68 A
STD100N03LT4
STD100N03LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
500 mJ
70 A
80 A
.0055 ohm
TO-251AA
110 W
320 A
Matte Tin (Sn)
STD70N02L
STD70N02L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOW THRESHOLD
280 mJ
.008 ohm
240 A
STD95N04
STD95N04 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
400 mJ
40 V
.0065 ohm
BSC027N03SG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
800 mJ
25 A
.0039 ohm
R-PDSO-F8
89 W
FLAT
NTMFD4C85NT3G
NTMFD4C85NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0043 ohm RDS(ON). It is used for SWITCHING applications in SERIES CONNECTED configuration. The transistor features METAL-OXIDE SEMICONDUCTOR technology and comes in an 8-terminal SMALL OUTLINE package.
34.5 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
15.4 A
.0043 ohm
300 A
NTMFD4C87NT3G
NTMFD4C87NT3G by Onsemi is an N-CHANNEL Power FET with 26.6A max drain current and 3.51W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems operating up to 150 °C.
26.6 A
3.51 W
NTMFS4C01NT1G
NTMFS4C01NT1G by Onsemi is a N-CHANNEL FET with 303A max drain current and 3.2W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
303 A
3.2 W
NVD6495NLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
79 mJ
.054 ohm
83 W
AEC-Q101
NVMFS4C01NT3G
NVMFS4C01NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 900A IDM, and 0.00095 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
862 mJ
319 A
.00095 ohm
R-PDSO-F5
5
3.84 W
900 A
Matte Tin (Sn) - annealed
NVMFS4C01NWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.84 W; Peak Reflow Temperature (C): 260; Minimum Operating Temperature: -55 Cel;
NVMFS4C03NT3G
NVMFS4C03NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
549 mJ
143 A
.0024 ohm
77 W
NVMFS4C03NWFT3G
NVMFS4C03NWFT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
FQD6N60CTM
Fairchild Semiconductor
FQD6N60CTM by Fairchild Semiconductor is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a single configuration with built-in diode and can handle up to 16A of pulsed drain current. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 80W and an on-resistance of 2 ohm.
FAST SWITCHING
300 mJ
4 A
2 ohm
16 A
NTD24N06L-1G
NTD24N06L-1G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 24A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 1.36W at 175 °C.
NTD95N02RG
NTD95N02RG by Onsemi is an N-CHANNEL FET with 32A ID and 0.005 ohm RDS. It's used for SWITCHING applications, featuring a 24V DS Breakdown Voltage and 84mJ EAS. The PLASTIC/EPOXY package with GULL WING terminals is ideal for ENHANCEMENT MODE operations in various electronic devices.
84 mJ
.005 ohm
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