Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB6NM60N
STMicroelectronics
STB6NM60N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 4.6A max drain current, and operates at up to 150 °C. Ideal for compact designs with its surface mount configuration.
AVALANCHE ENERGY RATED
65 mJ
SINGLE WITH BUILT-IN DIODE
600 V
4.6 A
.92 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
245
N-CHANNEL
45 W
18.4 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
STD95N3LLH6
STD95N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
150 mJ
DRAIN
30 V
80 A
.007 ohm
TO-252
175 Cel
260
70 W
320 A
STL150N3LLH6
STL150N3LLH6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 150 A, a breakdown voltage of 30 V, and low on-resistance of 0.0035 Ω. Ideal for high-performance power management in compact designs.
150 A
.0035 ohm
R-PDSO-N5
3
5
80 W
132 A
Matte Tin (Sn) - annealed
NO LEAD
DUAL
STL85N6F3
STL85N6F3 by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 85 A, a breakdown voltage of 60 V, and low on-resistance of 0.0057 Ω. This compact surface-mount device excels in power management solutions.
60 V
19 A
85 A
.0057 ohm
NOT SPECIFIED
76 A
IPF09N03LA
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 75 mJ;
LOGIC LEVEL COMPATIBLE
75 mJ
25 V
50 A
.0148 ohm
R-PSSO-G3
e0
63 W
350 A
TIN LEAD
SPD02N50C3
Infineon's SPD02N50C3 is a N-CHANNEL FET with 500V DS Breakdown Voltage, 5.4A IDM, and 25W Power Dissipation. Ideal for power applications requiring high voltage tolerance and current handling capabilities in compact designs.
AVALANCHE RATED
50 mJ
500 V
1.8 A
3 ohm
TO-252AA
25 W
5.4 A
TIN
NID9N05CLT4
Onsemi
NID9N05CLT4 by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max power dissipation of 28.8W. This MOSFET operates in enhancement mode with a max operating temperature of 175 °C, making it suitable for high-power switching applications.
ESD PROTECTED
160 mJ
52 V
9 A
.181 ohm
235
28.8 W
35 A
NID9N05CL
NID9N05CL by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 28.8W and can withstand temperatures up to 175 °C.
SPN01N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
.3 A
6 ohm
R-PDSO-G4
4
1.8 W
1.6 A
FDD8447L_F085
Fairchild Semiconductor
FDD8447L_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0085 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 65W and can withstand temperatures up to 175°C.
40 mJ
40 V
.0085 ohm
-55 Cel
65 W
AEC-Q101
NTD2955G
NTD2955G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 36A IDM, and 0.18 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 55W. The transistor has a SILICON element material and can withstand temperatures up to 175°C.
216 mJ
12 A
.18 ohm
P-CHANNEL
55 W
36 A
Other Transistors
NTD20P06LG
NTD20P06LG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE. With a Drain Current of 15.5A and 0.15 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for various power applications.
304 mJ
15 A
15.5 A
.15 ohm
54 W
STD60NH03LT4
STD60NH03LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Its compact design with gull-wing terminals ensures efficient surface mounting.
LOW THRESHOLD
300 mJ
60 A
.017 ohm
240 A
STD70NH02LT4
STD70NH02LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs.
360 mJ
24 V
.008 ohm
DMP3120L-7
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;
HIGH RELIABILITY
2.8 A
.12 ohm
R-PDSO-G3
1.4 W
IPB097N08N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (Abs) (ID): 70 A; Terminal Finish: MATTE TIN;
90 mJ
80 V
70 A
.0097 ohm
100 W
280 A
NIF9N05CLT1
NIF9N05CLT1 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 150 °C, making it ideal for various power control circuits.
110 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.6 A
.125 ohm
TO-261AA
1.69 W
10 A
Tin/Lead (Sn/Pb)
NIF9N05CLT3
NIF9N05CLT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. Ideal for use in circuits requiring high power dissipation and efficient switching capabilities.
NTR4501NT1
NTR4501NT1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 3.2A, operating in enhancement mode with a max power dissipation of 1.25W. With a small outline package style and peak reflow temperature of 235 °C, it offers efficient performance in various electronic devices.
20 V
3.2 A
.08 ohm
TO-236AB
1.25 W
Tin/Lead (Sn80Pb20)
NTR4501NT3G
NTR4501NT3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in small outline packages where high power dissipation and low on-resistance are required.
NTR4501NT3
NTR4501NT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for various power management tasks.
STB20NK50ZT4
STB20NK50ZT4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 68A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
850 mJ
20 A
17 A
.27 ohm
190 W
68 A
STB70NH03LT4
STB70NH03LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs.
85 W
STB9NK60ZDT4
STB9NK60ZDT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
235 mJ
7 A
.95 ohm
104 W
28 A
STV160NF02LT4
STV160NF02LT4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 160 A, low on-resistance of 0.0035 Ω, and built-in diode for enhanced performance. Ideal for high-efficiency power management in compact designs.
1500 mJ
160 A
R-PDSO-G10
10
250
640 A
STV160NF03LT4
STV160NF03LT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, a breakdown voltage of 30 V, and low on-resistance of 0.0038 Ω. Ideal for power management in compact designs, it comes in a small outline package with gull-wing terminals.
1000 mJ
.0038 ohm
IRFR5505GTRPBF
International Rectifier
IRFR5505GTRPBF by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 64A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a 0.11 ohm RDS(on), it can handle up to 18A drain current and dissipate 57W power at max temp of 175°C.
55 V
18 A
.11 ohm
57 W
64 A
MATTE TIN OVER NICKEL
DMN2040LSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.026 ohm
R-PDSO-G8
8
2 W
30 A
DMN3031LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
.0185 ohm
2.5 W
40 A
DMN3050S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
5.2 A
.035 ohm
DMS2120LFWB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; JESD-609 Code: e4;
2.9 A
.095 ohm
R-PDSO-N8
e4
1.5 W
NICKEL PALLADIUM GOLD
RZQ050P01TR
ROHM
ROHM RZQ050P01TR is a P-CHANNEL FET with 12V DS Breakdown Voltage, 5A Max ID, and 0.026 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it has 20A IDM and operates up to 150°C. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package.
12 V
5 A
R-PDSO-G6
e1
6
TIN SILVER COPPER
STS30N3LLH6
STS30N3LLH6 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact designs, it comes in an 8-terminal surface mount package.
525 mJ
2.7 W
120 A
Nickel/Palladium/Gold (Ni/Pd/Au)
STB75NH02LT4
STB75NH02LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance of just 0.014 Ω.
75 A
.014 ohm
STD100NH03LT4
STD100NH03LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
700 mJ
.0105 ohm
STS5PF20V
STS5PF20V from STMicroelectronics is a P-channel FET designed for efficient switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
.1 ohm
BSC022N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; No. of Terminals: 8; Transistor Element Material: SILICON;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
800 mJ
.0033 ohm
200 A
NTLUS4195PZTBG
NTLUS4195PZTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 17A IDM. Ideal for SWITCHING applications, it features 0.09 ohm RDS(ON) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has SILICON element material and TIN terminal finish.
2 A
.09 ohm
S-PDSO-N3
SQUARE
NTTFS4821NTAG
NTTFS4821NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 171A Pulsed Drain Current, and 0.0108 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 38.5W, making it ideal for high-power switching circuits.
55 mJ
57 A
13.5 A
.0108 ohm
S-PDSO-N5
38.5 W
171 A
NTTFS4821NTWG
NTTFS4821NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 171A IDM, and 0.0108 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in a SQUARE package with 5 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W and can handle up to 150 °C temperature.
Tin (Sn)
BSC032N03S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Avalanche Energy Rating (EAS): 550 mJ; Terminal Finish: TIN LEAD;
550 mJ
23 A
.0049 ohm
78 W
NTHD4502NT1G
NTHD4502NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS breakdown voltage, and 12A max pulsed drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package style. Operating from -55 to 150 °C, this MOSFET has 0.085 ohm max on-resistance and 22ns turn-on time.
2.2 A
.085 ohm
25 pF
R-PDSO-F8
UNSPECIFIED
1.13 W
FLAT
30 ns
22 ns
SI7434DP-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI7434DP-T1-E3 is an N-CHANNEL FET for SWITCHING applications. Features include 250V DS Breakdown Voltage, 40A IDM, and 0.155 ohm RDS(on). With a small outline package style and operating temperature up to 150°C, it is ideal for high-power switching circuits.
8.4 mJ
250 V
2.3 A
.155 ohm
R-PDSO-C8
5.2 W
C BEND
STS9NH3LL
STS9NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 9 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.
100 mJ
.025 ohm
NTD40N03RG
NTD40N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a package style of SMALL OUTLINE and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
32 A
.023 ohm
41.7 W
100 A
NTD40N03RT4G
NTD40N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a Package Style of SMALL OUTLINE and Surface Mount capability, it operates in ENHANCEMENT MODE at up to 175 °C.
NTD70N03RT4G
NTD70N03RT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 140A, Max Operating Temperature of 175°C, and Max Drain Current of 32A. With a low on-resistance of 0.013 ohm, this transistor is ideal for high-power switching circuits in various electronic devices.
71.7 mJ
62.8 A
.013 ohm
1.56 W
140 A
NTD80N02T4G
NTD80N02T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 200A Max Pulsed Drain Current, and 0.0058 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 75W.
733 mJ
.0058 ohm
75 W
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