Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SK3811-ZP-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 213 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 110 A;
SINGLE
110 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
NOT SPECIFIED
N-CHANNEL
213 W
FET General Purpose Power
YES
2SK3901(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
60 A
64 W
2SK3902(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
30 A
45 W
NP110N03PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
175 Cel
288 W
NP110N04PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
NP52N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 52 A;
52 A
56 W
NP55N055SDG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
55 A
77 W
NP55N055SDG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 55 A;
NP55N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 55 A;
NP60N03KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 60 A;
88 W
NP60N04KUG-E1-AY
NP60N04KUG-E1-AY by Renesas Electronics is a N-CHANNEL FET with 60A max drain current and 88W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
NP70N10KUF-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 70 A;
70 A
120 W
NP70N10KUF-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
NP82N03PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
82 A
143 W
NP82N055PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP88N03KDG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 88 A;
88 A
200 W
NP88N04KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
NP88N055KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP88N055KUG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 88 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA1727G-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Terminal Finish: TIN BISMUTH;
10 A
e6
2 W
TIN BISMUTH
UPA1763G-E1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.5 A;
4.5 A
e3
260
MATTE TIN
UPA1763G-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
UPA1763G-E2-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e6; Maximum Drain Current (ID): 4.5 A; Maximum Drain Current (Abs) (ID): 4.5 A;
UPA1764G-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
7 A
UPA1764G-E2-AZ
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
UPA1803GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
8 A
UPA1890GR-9JG-E1-A
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
6 A
N-CHANNEL AND P-CHANNEL
Other Transistors
NTD4863NAT4G
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
60.5 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
25 V
9.2 A
.014 ohm
R-PSSO-G2
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
98 A
TIN
GULL WING
30
SWITCHING
SILICON
DMN2009LSS-13
Diodes Incorporated
DMN2009LSS-13 by Diodes Inc. is a power FET with N-channel polarity and a built-in diode. It is used for switching applications, has a min DS breakdown voltage of 20V, and can handle a max pulsed drain current of 42A.
LOW THRESHOLD
20 V
12 A
.008 ohm
R-PDSO-G8
8
42 A
Not Qualified
FET General Purpose Powers
DUAL
STB14NM65N
STMicroelectronics
STB14NM65N by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
650 V
.38 ohm
TO-263AB
245
125 W
48 A
STB24NM65N
STB24NM65N by STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 76A pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
500 mJ
19 A
.19 ohm
160 W
76 A
STD10NM65N
STD10NM65N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 36A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
9 A
.48 ohm
TO-252AA
90 W
36 A
Matte Tin (Sn) - annealed
BSC240N12NS3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
50 mJ
120 V
37 A
.024 ohm
R-PDSO-N8
66 W
148 A
NO LEAD
SPB100N03S2-03G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Peak Reflow Temperature (C): 245; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
810 mJ
30 V
100 A
.003 ohm
400 A
SPB10N10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
100 V
10.3 A
.21 ohm
42.2 A
SIHFR430ATR-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHFR430ATR-GE3 is a N-channel FET with 500V DS breakdown voltage, ideal for switching applications. Features include 20A pulsed drain current, 130mJ avalanche energy rating, and 1.7 ohm max drain-source resistance. Its small outline package and high power dissipation make it suitable for enhancement mode operation in various electronic devices.
130 mJ
500 V
5 A
1.7 ohm
TO-252
110 W
20 A
SIHFR430ATRL-GE3
Vishay Intertechnology's SIHFR430ATRL-GE3 is a N-channel Power FET with 500V DS breakdown voltage, ideal for switching applications. It features 20A max pulsed drain current and 1.7ohm max drain-source resistance. With a package style of small outline and operating temperature up to 150°C, it offers high performance in compact designs.
SIHFR430ATRR-GE3
SIHFR430ATRR-GE3 by Vishay Intertechnology is a N-channel power FET with a min DS breakdown voltage of 500V. It is used for switching applications and has a max pulsed drain current of 20A.
FDC642P_F085
Fairchild Semiconductor
FDC642P_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 4A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount assembly.
72 mJ
4 A
.065 ohm
R-PDSO-G6
6
P-CHANNEL
1.2 W
FDS8949_F085
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
26 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
.029 ohm
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
32 mJ
.023 ohm
1.6 W
CSD75211W1723
Texas Instruments
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;
.07 ohm
R-PBGA-B12
e1
12
GRID ARRAY
1.5 W
TIN SILVER COPPER
BALL
BOTTOM
NTD5413NT4G
NTD5413NT4G by Onsemi is an N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 84A and EAS of 135mJ, suitable for high-power operations. With a 0.026 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C, making it versatile for various industrial uses.
135 mJ
60 V
.026 ohm
68 W
84 A
SI7790DP-T1-GE3
Vishay Intertechnology's SI7790DP-T1-GE3 is an N-channel FET with a built-in diode, ideal for switching applications. It features a 40V DS breakdown voltage, 70A max pulsed drain current, and 0.0045 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates at up to 150°C for enhanced performance.
80 mJ
50 A
.0045 ohm
R-XDSO-C5
5
UNSPECIFIED
69 W
Matte Tin (Sn)
C BEND
DMC3036LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR;
HIGH RELIABILITY
6.9 A
.036 ohm
2.5 W
24 A
DMP3035LSS-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; JESD-30 Code: R-PDSO-G8;
.016 ohm
40 A
DMP3100L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
LOW THRESHOLD, HIGH RELIABILITY
2.7 A
.1 ohm
R-PDSO-G3
3
1.08 W
SPB80P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 340 W; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
824 mJ
80 A
e0
220
340 W
320 A
TIN LEAD
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