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NP82N055PUG-E1-AY

Renesas Electronics

NP82N055PUG-E1-AY by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

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Vyrian

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2,717

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AZTECH Wire

Italy . 839 parts In-Stock

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839

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QUARKTWIN TECHNOLOGY LTD

USA . 22,988 parts In-Stock

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22,988

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Perfect Parts

USA . 896 parts In-Stock

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896

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Technical Specifications

Power Field Effect Transistors (FET) NP82N055PUG-E1-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

82 A

Maximum Drain Current (ID):

82 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NP82N055PUG-E1-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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