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UPA1763G-E1-AT

Renesas Electronics

UPA1763G-E1-AT by Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.5 A;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 4,289 parts In-Stock

1+ parts

$3.931

100+ parts

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10k+ parts

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4,289

$3.931

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AZTECH Wire

Italy . 429 parts In-Stock

1+ parts

$9.100

100+ parts

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1k+ parts

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10k+ parts

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429

$9.100

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Component Stockers USA

USA . 261 parts In-Stock

1+ parts

$99.990

100+ parts

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1k+ parts

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10k+ parts

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261

$99.990

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Technical Specifications

Power Field Effect Transistors (FET) UPA1763G-E1-AT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

UPA1763G-E1-AT Transistors trade compliance attributes, and parameters.

ECCN

5A002

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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