Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPD20N03LG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOGIC LEVEL COMPATIBLE; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
LOGIC LEVEL COMPATIBLE
15 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
30 A
.031 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252
R-PSSO-G2
3
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
120 A
Not Qualified
YES
GULL WING
SINGLE
SWITCHING
SILICON
FDD5810_F085
Fairchild Semiconductor
FDD5810_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 37A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.022 ohm.
45 mJ
60 V
37 A
7.4 A
.022 ohm
TO-252AA
e3
175 Cel
-55 Cel
72 W
AEC-Q101
FET General Purpose Power
MATTE TIN
30
FDB5800_F085
FDB5800_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80A ID and 242W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This single configuration FET has a max operating temperature of 175°C, making it ideal for demanding environments.
80 A
242 W
FDD26AN06A0_F085
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
35 mJ
36 A
7 A
.026 ohm
75 W
PHN210,118
NXP Semiconductors
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 3.4 A;
3.4 A
e4
150 Cel
2 W
Nickel/Palladium/Gold (Ni/Pd/Au)
BSP030,115
NXP Semiconductors' BSP030,115 is a N-CHANNEL FET with 30V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at 150°C max temp, it has 0.03 ohm Drain-Source On Resistance.
10 A
.03 ohm
R-PDSO-G4
4
1.25 W
40 A
TIN
DUAL
BUK7605-30A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING;
500 mJ
75 A
.005 ohm
400 A
BUK7614-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Avalanche Energy Rating (EAS): 125 mJ; Case Connection: DRAIN;
125 mJ
55 V
73 A
.014 ohm
245
166 W
266 A
BUK7615-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 240 A; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
120 mJ
100 V
.015 ohm
240 A
BUK7616-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; No. of Terminals: 2;
65.7 A
.016 ohm
263 A
BUK7624-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V; Case Connection: DRAIN;
80 mJ
45 A
.024 ohm
180 pF
103 W
180 A
60 ns
53 ns
BUK78150-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Drain Current (Abs) (ID): 5.5 A; Maximum Drain Current (ID): 5.5 A;
25 mJ
5.5 A
.15 ohm
8 W
22 A
BUK78150-55A,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; JESD-609 Code: e3; Case Connection: DRAIN;
BUK7880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
30 mJ
7.5 A
.08 ohm
85 pF
8.3 W
45 ns
39 ns
BUK9222-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 103 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
160 mJ
48 A
193 A
BUK9608-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 187 W; Maximum Turn Off Time (toff): 435 ns; No. of Terminals: 2;
.008 ohm
480 pF
187 W
435 ns
230 ns
BUK9610-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Avalanche Energy Rating (EAS): 333 mJ; Peak Reflow Temperature (C): 245;
333 mJ
.075 A
100 A
.011 ohm
200 W
Tin (Sn)
BUK9611-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
330 mJ
.012 ohm
BUK9618-55A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 127 mJ;
127 mJ
61 A
.019 ohm
136 W
246 A
BUK9620-100A,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
420 mJ
63 A
253 A
BUK9635-100A,118
NXP Semiconductors' BUK9635-100A,118 is a N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a built-in diode, 0.039 ohm RDS(on), and 175°C max operating temp.
41 A
.039 ohm
150 W
165 A
BUK9635-55,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum DS Breakdown Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
34 A
.035 ohm
85 W
136 A
FET General Purpose Powers
BUK98150-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .15 ohm;
2.6 A
1.8 W
BUK9832-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 47 A;
100 mJ
12 A
.036 ohm
47 A
BUK9840-55,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Avalanche Energy Rating (EAS): 60 mJ; Operating Mode: ENHANCEMENT MODE;
60 mJ
10.7 A
5 A
.04 ohm
BUK9880-55,135
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Additional Features: ESD PROTECTED, LOGIC LEVEL COMPATIBLE; Maximum Drain Current (ID): 3.5 A;
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
3.5 A
BUK9880-55A,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
36 mJ
.089 ohm
PHB11N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
10.3 A
PHB78NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
185 mJ
25 V
.0135 ohm
160 A
PHD23NQ10T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON; Qualification: Not Qualified;
93 mJ
23 A
.07 ohm
NOT SPECIFIED
92 A
PHD3055E,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;
33 W
PHD37N06LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 37 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
148 A
PHD45N03LTA,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Avalanche Energy Rating (EAS): 40 mJ; Transistor Application: SWITCHING;
40 mJ
PHD55N03LTA,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 55 A; No. of Terminals: 2;
55 A
.018 ohm
220 A
PHD96NQ03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252AA; Package Shape: RECTANGULAR;
.0075 ohm
PHD98N03LT,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Form: GULL WING; Maximum Pulsed Drain Current (IDM): 240 A;
183 mJ
.0073 ohm
PHK4NQ10T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 4 A; Maximum Pulsed Drain Current (IDM): 16 A;
4 A
R-PDSO-G8
8
16 A
PSMN004-36B,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Form: GULL WING; No. of Terminals: 2;
36 V
.0054 ohm
PSMN005-25D,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2; Additional Features: LOGIC LEVEL COMPATIBLE;
PSMN005-55B,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
268 mJ
.0067 ohm
SI4800,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: NICKEL PALLADIUM GOLD; JEDEC-95 Code: MS-012AA;
9 A
.0185 ohm
MS-012AA
NICKEL PALLADIUM GOLD
SI9936DY,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; No. of Terminals: 8; Package Style (Meter): SMALL OUTLINE;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.05 ohm
FDC2612_F095
FDC2612_F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.1A ID and 1.6W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for low-power electronic devices requiring efficient power management.
1.1 A
1.6 W
AO6402AL
Alpha & Omega Semiconductor
AO6402AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this MOSFET has 30A IDM and GULL WING terminals.
.027 ohm
R-PDSO-G6
6
AO6402A
AO6402A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 30A IDM and built-in DIODE. Ideal for surface mount designs due to GULL WING terminals and SMALL OUTLINE package style.
NTMFD4901NFT3G
Onsemi
NTMFD4901NFT3G by Onsemi is an N-channel Power FET for switching applications. It features a max pulsed drain current of 100A, avalanche energy rating of 115mJ, and max operating temperature of 150 °C. With a package style of small outline and terminal finish of matte tin, it is ideal for high-power electronic circuits.
115 mJ
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
23.4 A
13.5 A
.0035 ohm
R-PDSO-F8
3.45 W
FLAT
NVD4804NT4G
NVD4804NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 230A, avalanche energy rating of 450mJ, and max power dissipation of 107W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and enhanced performance capabilities.
450 mJ
124 A
14.5 A
.0055 ohm
107 W
230 A
NVF3055L108T3G
NVF3055L108T3G by Onsemi is a N-CHANNEL FET with 3A max drain current and 2.1W power dissipation. Ideal for power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
3 A
2.1 W
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