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FDC2612_F095

Fairchild Semiconductor

FDC2612_F095 by Fairchild Semiconductor

FDC2612_F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.1A ID and 1.6W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for low-power electronic devices requiring efficient power management.

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Vyrian

USA . 5,215 parts In-Stock

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Digiode

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Nova Conductors

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550

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Aztec Data Supply Inc.

USA . 1,580 parts In-Stock

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$1.019

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Corohmni

South Africa . 166 parts In-Stock

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Semicontronic

India . 482 parts In-Stock

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AZTECH Wire

Italy . 430 parts In-Stock

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Ampacity Inc.

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Decca Corp

Germany . 228 parts In-Stock

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$29.449

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Continental Prestige Electronics

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Advanced Electronics

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Supply Digital

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Argo Parts USA

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Bastille Electronics

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Overview

Experience the power and reliability of the FDC2612_F095 by Fairchild Semiconductor, a leading manufacturer in the industry. This N-CHANNEL Power Field Effect Transistor (FET) offers single configuration and operates in enhancement mode, making it ideal for a wide range of applications. With a maximum drain current of 1.1A and maximum power dissipation of 1.6W, this high-quality product ensures optimal performance and efficiency. Trust Fairchild Semiconductor to deliver cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your projects with the FDC2612_F095 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, ensuring the product can withstand challenging environments.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and efficient power management.

Minimum DS Breakdown Voltage: 80 V

Suitable for high voltage applications, ensuring reliable performance under demanding conditions.

Maximum Pulsed Drain Current (IDM): 1440 A

Ability to handle high current pulses, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 250 W

Efficiently dissipates power, helping to prevent overheating and ensuring long-term reliability.

Maximum Operating Temperature: 175 °C

Can operate in high temperature environments, making it versatile for various applications.

Technical Specifications

Power Field Effect Transistors (FET) FDC2612_F095 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.1 A

Maximum Drain Current (ID):

1.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

FDC2612_F095 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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