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AO6402AL

Alpha & Omega Semiconductor

AO6402AL by Alpha & Omega Semiconductor

AO6402AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this MOSFET has 30A IDM and GULL WING terminals.

Median Price

$0.422

Lifecycle Status

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1k+

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Vyrian

USA . 7,048 parts In-Stock

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Bristol Electronics

USA . 4,468 parts In-Stock

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$0.422

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$0.315

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$0.292

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$0.292

Dan-Mar Components

USA . 4,468 parts In-Stock

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VNN

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ACDS - Activité Composants Distribution Service

France . 568 parts In-Stock

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Nova Conductors

Japan . 60 parts In-Stock

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AZTECH Wire

Italy . 319 parts In-Stock

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Kepictronics

USA . 7,018 parts In-Stock

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S.R.D Solutions

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Assy Fe

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Discover the AO6402AL by Alpha & Omega Semiconductor, a top-quality Power FET designed for switching applications. With its N-channel configuration and built-in diode, this transistor offers unmatched performance and reliability. From its 30V minimum breakdown voltage to its low on-resistance of 0.027 ohm, this product is perfect for various power management needs. Trust in Alpha & Omega Semiconductor's expertise in semiconductor technology and choose the AO6402AL for your next project. Unlock the potential of your designs with this high-value component that delivers exceptional benefits and advantages to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient performance and control in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for fast switching operations, making it suitable for a wide range of applications.

Surface Mount: YES

Allows for easy and convenient PCB assembly, saving time and effort.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage for reliable operation in different voltage conditions.

Package Shape: RECTANGULAR

Facilitates efficient placement and mounting on the PCB, optimizing space utilization.

Terminal Form: GULL WING

Enables secure and reliable soldering connections, improving overall performance.

Operating Mode: ENHANCEMENT MODE

Offers better control over the transistor's conductivity, enhancing overall efficiency.

Maximum Pulsed Drain Current (IDM): 30 A

Supports high current handling capabilities, suitable for demanding applications.

No. of Terminals: 6

Provides flexibility in connectivity options and circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact and efficient package style, suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, ensuring stable operation over time.

Transistor Element Material: SILICON

Known for its high efficiency and durability, ensuring long-term performance.

Maximum Drain-Source On Resistance: 0.027 ohm

Low resistance value minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Provides additional connection options, increasing versatility in circuit designs.

Technical Specifications

Power Field Effect Transistors (FET) AO6402AL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AO6402AL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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