Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMFS5C404NLT3G
Onsemi
NTMFS5C404NLT3G by Onsemi is a single N-channel power FET with a max drain current of 339A and power dissipation of 167W. Utilizes metal-oxide semiconductor technology, operates up to 150 °C, ideal for high-power applications requiring efficient switching and control.
SINGLE
339 A
METAL-OXIDE SEMICONDUCTOR
e3
1
150 Cel
260
N-CHANNEL
167 W
FET General Purpose Power
YES
Matte Tin (Sn) - annealed
30
NTMFS5C646NLT3G
NTMFS5C646NLT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 93A ID, and 0.0063 ohm RDS(ON). It operates in Enhancement Mode with 750A IDM and 185mJ EAS. Ideal for power management applications due to its high power dissipation of 79W and small outline package style.
185 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
93 A
.0063 ohm
R-PDSO-F5
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
79 W
750 A
FLAT
DUAL
SILICON
NVMFS5C612NLT3G
NVMFS5C612NLT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
235 A
NVMFS5C612NLWFT1G
NVMFS5C612NLWFT1G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, ideal for high-power applications requiring efficient switching capabilities.
NVMFS5C612NLWFT3G
NVMFS5C612NLWFT3G by Onsemi is a single N-channel Power FET with 235A max drain current and 167W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology.
IRFH5106TR2PBF
International Rectifier
IRFH5106TR2PBF by International Rectifier is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 96mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface mount transistor has a Drain Current of 21A and 0.0056 ohm On Resistance.
96 mJ
100 A
21 A
.0056 ohm
R-PDSO-N5
114 W
400 A
Not Qualified
MATTE TIN
NO LEAD
SWITCHING
AOD4N60
Alpha & Omega Semiconductor
AOD4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 14A max pulsed drain current, 235mJ avalanche energy rating, and 2.3ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.
235 mJ
600 V
4 A
2.3 ohm
TO-252
R-PSSO-G2
2
NOT SPECIFIED
104 W
14 A
GULL WING
DMJ7N70SK3-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.25 ohm; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;
HIGH RELIABILITY
700 V
3.9 A
1.25 ohm
15.6 A
AEC-Q101
R6020FNJTL
ROHM
ROHM R6020FNJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Features include 80A max pulsed drain current, 0.28 ohm max drain-source resistance, and 26.7mJ avalanche energy rating. Suitable for ENHANCEMENT MODE operation in various electronic devices requiring high power handling capabilities.
26.7 mJ
20 A
.28 ohm
80 A
10
FDB86363_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB86363_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It has 110A Drain Current, 0.0024 ohm On Resistance, and 300W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
512 mJ
80 V
110 A
.0024 ohm
TO-263AB
300 W
MTB3N60ET4
MTB3N60ET4 by Onsemi is a N-CHANNEL FET with 3A max drain current and 75W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
3 A
e0
235
75 W
TIN LEAD
STB45NF06
STMicroelectronics
STB45NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 38A Drain Current, and 0.028 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, with 152A Pulsed Drain Current capability.
260 mJ
38 A
.028 ohm
80 W
152 A
STB80NF55-08T4
STB80NF55-08T4 by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Suitable for surface mount assembly, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
1000 mJ
55 V
.008 ohm
245
320 A
STB80PF55T4
STB80PF55T4 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 80A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications due to its 320A Pulsed Drain Current and 1.4mJ Avalanche Energy Rating in a small outline package.
1.4 mJ
.018 ohm
P-CHANNEL
Other Transistors
Matte Tin (Sn)
STB85NF3LLT4
STB85NF3LLT4 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 85A Drain Current, and 0.0095 ohm On Resistance. Ideal for SWITCHING applications due to its 340A Pulsed Drain Current capability. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
30 V
85 A
.0095 ohm
110 W
340 A
STD4NS25T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR;
120 mJ
250 V
1.1 ohm
50 W
16 A
STD60NF3LLT4
STD60NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 60A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 240A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 100W and can withstand temperatures up to 175 °C.
700 mJ
60 A
.0105 ohm
TO-252AA
100 W
240 A
STSJ25NF3LL
STMicroelectronics' STSJ25NF3LL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 100A IDM and 0.013 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
12 A
.013 ohm
R-PDSO-G8
e4
8
70 W
NICKEL PALLADIUM GOLD
STS5DNF20V
STS5DNF20V by STMicroelectronics is an N-CHANNEL FET with 20V DS Breakdown Voltage and 5A Drain Current. Ideal for SWITCHING applications, it features a dual-element configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5 A
.045 ohm
2 W
Nickel/Palladium/Gold (Ni/Pd/Au)
STT3PF30L
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
LOW THRESHOLD
2.4 A
.2 ohm
R-PDSO-G6
6
1.6 W
10 A
NDBA180N10BT4H
NDBA180N10BT4H by Onsemi is a Power FET with 100V DS Breakdown Voltage, 600A IDM, and 0.0033 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals.
ULTRA LOW RESISTANCE
451 mJ
100 V
.0033 ohm
600 A
TIN
STH245N75F3-6
STH245N75F3-6 by STMicroelectronics is a N-channel Power FET with 75V DS breakdown voltage, 720A IDM, and 0.003 ohm RDS(on). It is used for switching applications in automotive industry due to AEC-Q101 standard compliance.
600 mJ
75 V
180 A
.003 ohm
R-PSSO-G6
720 A
STH80N10F7-2
STH80N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 320A IDM, and 0.0095 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 175 °C, with 110W Pdiss and GULL WING terminals.
ULTRA LOW-ON RESISTANCE
FDB7030BLS
Fairchild Semiconductor's FDB7030BLS is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 0.0105 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 100°C. Suitable for surface mount with GULL WING terminals, this transistor offers a max power dissipation of 65W in a RECTANGULAR package.
56 A
100 Cel
65 W
160 A
Tin/Lead (Sn85Pb15)
DMN2104L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Minimum DS Breakdown Voltage: 20 V; Peak Reflow Temperature (C): 260;
4.3 A
.053 ohm
R-PDSO-G3
3
1.4 W
15 A
DMN3052LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; No. of Elements: 1;
7.1 A
.03 ohm
2.5 W
28 A
DMS2220LFW-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e4; Additional Features: HIGH RELIABILITY;
2.9 A
.095 ohm
R-PDSO-N8
1.5 W
STB12NM50ND
STB12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. Features include 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. Suitable for high-power switching circuits in various electronic devices.
350 mJ
500 V
11 A
.38 ohm
44 A
STD12NM50ND
STD12NM50ND by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features a 500V DS Breakdown Voltage, 44A Pulsed Drain Current, and 0.38 ohm On Resistance. With a max power dissipation of 100W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
STD3NK60ZD
STD3NK60ZD by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 9.6A Pulsed Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, operating in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
150 mJ
3.6 ohm
45 W
9.6 A
STD40N2LH5
STD40N2LH5 by STMicroelectronics is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0155 ohm RDS(on), and 35W Pdiss in a PLASTIC/EPOXY package.
110 mJ
25 V
40 A
.0155 ohm
35 W
DMC3018LSD-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .02 ohm;
9.1 A
.02 ohm
N-CHANNEL AND P-CHANNEL
32 A
NTMFS4823NT1G
NTMFS4823NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 85A IDM and 0.018 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power management in various electronic devices.
28.8 mJ
30 A
6.9 A
85 pF
R-PDSO-F6
32.5 W
NTMFS4823NT3G
NTMFS4823NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 85A IDM, 28.8mJ EAS, and 0.018 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 32.5W in a SMALL OUTLINE package.
IPB100N06S3-04
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (Abs) (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
450 mJ
.0041 ohm
214 W
IPB100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 214 W; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 450 mJ;
LOGIC LEVEL COMPATIBLE
.0059 ohm
IPB45N06S3-16
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
95 mJ
45 A
.0154 ohm
IPB45N06S3L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0131 ohm
IPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
.0062 ohm
IPB80N06S3L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; JEDEC-95 Code: TO-263AB; Peak Reflow Temperature (C): 245;
345 mJ
.0077 ohm
165 W
IPD30N06S2-15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Maximum Operating Temperature: 175 Cel; Maximum Drain-Source On Resistance: .0147 ohm;
240 mJ
.0147 ohm
136 W
120 A
40
IPD30N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; Case Connection: DRAIN; No. of Terminals: 2;
.017 ohm
200 A
FDB2532_F085
FDB2532_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, 79A Drain Current, and 0.016 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a built-in DIODE. This transistor operates at up to 175°C and has a power dissipation of 310W in a small outline package.
400 mJ
150 V
79 A
8 A
.016 ohm
310 W
FDD4243_F085
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
ULTRA-LOW RESISTANCE
84 mJ
40 V
24 A
.044 ohm
42 W
FDD6637_F085
FDD6637_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 55A, 0.0116 ohm On Resistance, and operates in ENHANCEMENT MODE. This METAL-OXIDE SEMICONDUCTOR transistor has a max power dissipation of 57W and can withstand temperatures up to 175°C.
61 mJ
35 V
55 A
.0116 ohm
57 W
DMP3025LK3-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
16.1 A
10.6 A
.025 ohm
10 W
41.9 A
IPD50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Maximum Drain Current (Abs) (ID): 7.1 A; JESD-609 Code: e3;
166 mJ
.52 ohm
66 W
NTMFS5844NLT1G
NTMFS5844NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 243A IDM, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W Pdiss, EAS of 48mJ, and operating temp up to 150°C. Suitable for surface mount designs with small outline package style.
48 mJ
61 A
107 W
243 A
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