Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVMFS5833NWFT1G
Onsemi
NVMFS5833NWFT1G by Onsemi is a single N-channel Power FET with 86A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching and thermal performance.
SINGLE
86 A
METAL-OXIDE SEMICONDUCTOR
e3
1
175 Cel
260
N-CHANNEL
112 W
FET General Purpose Power
YES
TIN
30
NVMFS5833NWFT3G
NVMFS5833NWFT3G by Onsemi is an N-CHANNEL FET with 86A max drain current and 112W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features a metal-oxide semiconductor technology. Suitable for surface mount configurations, this transistor is designed for robust performance in demanding environments.
NVTFS4C06NWFTAG
NVTFS4C06NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 71A Drain Current, and 0.0061 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance, it operates in Enhancement Mode with 175°C max temperature and features a built-in diode.
34 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
71 A
.0061 ohm
S-PDSO-F5
5
ENHANCEMENT MODE
-55 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
37 W
367 A
AEC-Q101
Matte Tin (Sn) - annealed
FLAT
DUAL
SILICON
NVTFS4C06NWFTWG
NVTFS4C06NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 367A IDM, and 0.0061 ohm RDS(on). It is an N-CHANNEL MOSFET suitable for automotive applications due to its AEC-Q101 reference standard certification.
NVTFS4C08NWFTAG
NVTFS4C08NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 standard compliance.
20 mJ
55 A
.0059 ohm
31 W
253 A
NVTFS4C08NWFTWG
NVTFS4C08NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in enhancement mode, it offers high power dissipation of 31W and can withstand temperatures from -55 to 175 °C.
VNB20N07
STMicroelectronics
VNB20N07 by STMicroelectronics is an N-channel Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm on-resistance, making it suitable for high-power applications. The transistor features a fast turn-on time of 580ns and turn-off time of 1100ns, ideal for efficient switching operations.
COMPLEX
.07 ohm
TO-263
R-PSSO-G2
2
RECTANGULAR
83 W
MATTE TIN
GULL WING
1100 ns
580 ns
STN2NE10L
STN2NE10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 7.2A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 20mJ EAS rating. Package: PLASTIC/EPOXY, GULL WING terminals, suitable for surface mount with DUAL terminal position.
LOW THRESHOLD
100 V
2 A
1.8 A
.45 ohm
R-PDSO-G4
4
150 Cel
2.5 W
7.2 A
Not Qualified
SWITCHING
STB50NE10T4
STB50NE10T4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 200A IDM, and 0.027 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
300 mJ
50 A
.027 ohm
TO-263AB
150 W
200 A
STB80NE03L-06T4
STB80NE03L-06T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. Package: PLASTIC/EPOXY, GULL WING terminals, and small outline style.
600 mJ
80 A
.008 ohm
320 A
IRLML6402TR
International Rectifier
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
HIGH RELIABILITY
11 mJ
20 V
3.7 A
.065 ohm
TO-236AB
R-PDSO-G3
e0
3
P-CHANNEL
1.3 W
22 A
Other Transistors
TIN LEAD
BSP613P
Infineon Technologies
BSP613P by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 11.6A and an avalanche energy rating of 150mJ. With a 0.13 ohm max drain-source resistance, this MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
AVALANCHE RATED
150 mJ
60 V
2.9 A
.13 ohm
1.8 W
11.6 A
STN1N20
STN1N20 by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 4A IDM, and 10mJ EAS. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 2.9W in a SMALL OUTLINE package suitable for surface mount assembly.
10 mJ
200 V
1 A
1.5 ohm
2.9 W
4 A
STN2NE10
STN2NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 8A IDM, 20mJ EAS, and 0.4 ohm RDS(on). With a max operating temperature of 150 °C, it's suitable for various power management tasks in electronic devices.
.4 ohm
8 A
STS3DNE60L
STS3DNE60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 12A IDM and 0.1 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for high-power circuits.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3 A
.1 ohm
R-PDSO-G8
e4
8
2 W
12 A
NICKEL PALLADIUM GOLD
STS12NF30L
STS12NF30L by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, 48A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in diode and operates at up to 150 °C.
.011 ohm
48 A
Nickel/Palladium/Gold (Ni/Pd/Au)
SPB18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Additional Features: AVALANCHE RATED; Package Shape: RECTANGULAR;
151 mJ
18.6 A
18.7 A
220
80 W
74.8 A
STB10N60M2
STB10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 110mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 85W and operates b/w -55 to 150 °C.
110 mJ
600 V
7.5 A
.6 ohm
.84 pF
NOT SPECIFIED
85 W
30 A
R6002ENDTL
ROHM
ROHM R6002ENDTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 4A IDM, 6mJ EAS, and 3.4Ω max RDS(on). Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs requiring high drain current capabilities.
6 mJ
1.7 A
3.4 ohm
10
FDZ5047N
Fairchild Semiconductor
Fairchild Semiconductor's FDZ5047N is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.0029 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package has a RECTANGULAR shape with BALL terminals, making it suitable for surface mount installations.
.0029 ohm
R-PBGA-B36
36
GRID ARRAY
2.8 W
75 A
BALL
BOTTOM
STS11NF30L
STS11NF30L by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 11 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
11 A
.019 ohm
44 A
IRF7901D1
IRF7901D1 by International Rectifier is an N-CHANNEL FET for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 24A, and max operating temperature of 150°C. With a package style of small outline and surface mount capability, it offers efficient power management in various electronic devices.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.038 ohm
MS-012AA
24 A
IRFR13N20DTRL
IRFR13N20DTRL by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 130mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a 0.235 ohm Drain-Source On Resistance and can handle up to 110W power dissipation.
130 mJ
13 A
.235 ohm
TO-252AA
240
110 W
52 A
Tin/Lead (Sn/Pb)
IRFR13N20DTR
IRFR13N20DTR by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A Max Pulsed Drain Current and 0.235 ohm Max Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates at up to 175°C and has a power dissipation of 110W.
NDT451ANJ23Z
Fairchild Semiconductor's NDT451ANJ23Z is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 25A Max Pulsed Drain Current, and 0.035 ohm Max Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 3W at 150°C.
.035 ohm
3 W
25 A
IRF7901D1TR
IRF7901D1TR by International Rectifier is an N-CHANNEL FET with 2 SERIES CONNECTED elements and a built-in diode. It operates in ENHANCEMENT MODE for SWITCHING applications, with a Max Pulsed Drain Current of 24A. This PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C operating temperature.
BSO215C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PDSO-G8;
LOGIC LEVEL
26 mJ
N-CHANNEL AND P-CHANNEL
14.8 A
BSO612CV
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 3 A; JESD-30 Code: R-PDSO-G8;
47 mJ
.12 ohm
235
BSO613SPV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; JESD-30 Code: R-PDSO-G8; Peak Reflow Temperature (C): 235;
3.44 A
13.8 A
STD5NM50T4
STD5NM50T4 by STMicroelectronics is an N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features a max IDM of 30A and EAS of 300mJ, operating in enhancement mode. With a package style of small outline and matte tin terminal finish, it offers high power dissipation up to 50W at a max temp of 150°C.
500 V
5 A
.8 ohm
50 W
STB55NF03LT4
STB55NF03LT4 by STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOGIC LEVEL COMPATIBLE
.02 ohm
220 A
STB70NFS03LT4
STB70NFS03LT4 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
500 mJ
70 A
.0095 ohm
245
100 W
280 A
STB80NF03L-04T4
STB80NF03L-04T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.0055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 320A pulsed drain current. Package style is small outline with gull wing terminals.
2300 mJ
.0055 ohm
300 W
STD40NF03LT4
STD40NF03LT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
850 mJ
40 A
55 W
160 A
STD30NF03LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): 260; Qualification: Not Qualified;
100 mJ
TO-252
40 W
120 A
SPN02N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Case Connection: DRAIN; JESD-30 Code: R-PDSO-G4;
HIGH VOLTAGE
50 mJ
.4 A
3 ohm
255
2.2 A
SPN03N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .7 A;
.7 A
1.4 ohm
CSD17576Q5BT
Texas Instruments
CSD17576Q5BT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. With a temperature range of -55 to 150 °C, it's ideal for high-power switching circuits in various electronic devices.
115 mJ
196 pF
R-PDSO-N8
400 A
NO LEAD
NVMFS5C404NLT1G
NVMFS5C404NLT1G by Onsemi is a N-CHANNEL FET with 352A max drain current and 200W power dissipation. Ideal for high-power applications, it operates at up to 175°C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration.
352 A
200 W
NVMFS5C404NLT3G
NVMFS5C404NLT3G by Onsemi is a single N-channel Power FET with 352A max drain current and 200W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, making it ideal for high-power applications in automotive and industrial sectors.
NVMFS5C410NLT1G
NVMFS5C410NLT1G by Onsemi is a N-CHANNEL FET with 315A ID and 167W power dissipation. Ideal for high-power applications, it operates up to 175 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for surface mount designs, it features matte tin finish and peak reflow temp of 260°C.
315 A
167 W
NVMFS5C410NLT3G
NVMFS5C410NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0013 ohm RDS(on). It is used in automotive applications due to AEC-Q101 standard compliance and 175 °C operating temperature.
706 mJ
40 V
.0013 ohm
R-PDSO-F5
900 A
NVMFS5C410NLWFT1G
NVMFS5C410NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0012 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
330 A
.0012 ohm
116 pF
NVMFS5C442NLT1G
NVMFS5C442NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
265 mJ
130 A
.0037 ohm
37 pF
NVMFS5C442NLT3G
NVMFS5C442NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A ID, and 0.0037 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVMFS5C442NLWFT1G
NVMFS5C442NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 130A Drain Current, and 0.0037 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance and high power dissipation of 83W in small outline package.
NVMFS5C442NLWFT3G
NVMFS5C442NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0037 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C646NLT1G
NVMFS5C646NLT1G by Onsemi is a N-CHANNEL FET with 93A max drain current and 79W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
93 A
79 W
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