Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB77N06S212ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 308 A; Maximum Drain Current (ID): 77 A; JEDEC-95 Code: TO-263AB;
280 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
55 V
77 A
.0117 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
308 A
YES
GULL WING
SINGLE
SILICON
IPB80N03S4L02ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA LOW RESISTANCE; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-263AB;
ULTRA LOW RESISTANCE
260 mJ
30 V
80 A
.0024 ohm
e3
320 A
TIN
IPB80N04S303ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 320 A; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
526 mJ
40 V
.0035 ohm
IPB80N04S304ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;
290 mJ
.0042 ohm
IPB80N04S306ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: ULTRA LOW RESISTANCE; Maximum Pulsed Drain Current (IDM): 320 A;
125 mJ
.0054 ohm
IPB80N04S403ATMA1
Infineon's IPB80N04S403ATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage and 320A IDM. Ideal for power applications, it features 0.003 ohm max RDS(on) and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic devices.
200 mJ
.003 ohm
IPB80N06S2H5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Transistor Element Material: SILICON; Case Connection: DRAIN;
700 mJ
.0052 ohm
IPB80N06S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Case Connection: DRAIN;
LOGIC LEVEL COMPATIBLE
450 mJ
.0097 ohm
IPB80N06S2L09ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
370 mJ
.011 ohm
IPB80N06S2L11ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0147 ohm; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE;
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
.0147 ohm
IPB80P04P405ATMA1
Infineon's IPB80P04P405ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0049 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
64 mJ
.0049 ohm
NOT SPECIFIED
P-CHANNEL
AEC-Q101
Tin (Sn)
IPB80P04P407ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): 1;
31 mJ
.0077 ohm
IPB80P04P4L04ATMA1
IPB80P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 320A and a max drain-source on resistance of 0.0071 ohm. This transistor is suitable for applications requiring high power and low resistance.
60 mJ
.0071 ohm
IPB80P04P4L06ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 320 A;
.0064 ohm
IPB90N04S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PSSO-G2; Terminal Finish: TIN;
475 mJ
90 A
.0021 ohm
360 A
IPD26N06S2L35ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 55 V;
80 mJ
30 A
.047 ohm
TO-252
120 A
IPD50N10S3L16ATMA1
IPD50N10S3L16ATMA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 100V and max pulsed drain current of 200A. It is commonly used in applications requiring high power and efficiency, such as automotive systems and industrial equipment.
330 mJ
100 V
50 A
.0199 ohm
260
200 A
IPD50P04P413ATMA1
Infineon's IPD50P04P413ATMA1 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 20A IDM, and 0.0126 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
18 mJ
.0126 ohm
20 A
IPD70P04P409ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Avalanche Energy Rating (EAS): 24 mJ; Terminal Form: GULL WING;
24 mJ
73 A
.0089 ohm
292 A
IPD80N04S306ATMA1
Infineon's IPD80N04S306ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 0.0052 ohm RDS(on), and 320A IDM. Ideal for automotive applications due to AEC-Q101 compliance and 125mJ EAS rating.
IPD85P04P407ATMA1
IPD85P04P407ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 85A ID, and 0.0073 ohm RDS(ON). It's used in automotive applications due to AEC-Q101 standard compliance and high IDM of 340A.
30 mJ
85 A
.0073 ohm
340 A
IPD85P04P4L06ATMA1
IPD85P04P4L06ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 85A Max Drain Current, and 0.0064 ohm RDS(ON). It's used in automotive applications due to AEC-Q101 standard compliance and 340A IDM for high-power requirements.
IPD90P04P405ATMA1
IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.
.0047 ohm
IPD90P04P4L04ATMA1
IPD90P04P4L04ATMA1 by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 360A and a max drain-source on resistance of 0.0043 ohm. This transistor is commonly used in applications requiring high power and low resistance.
.0043 ohm
IPG20N04S412ATMA1
Infineon's IPG20N04S412ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.0122 ohm RDS(on). Ideal for power applications requiring high current handling in a compact SMALL OUTLINE package.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
.0122 ohm
R-PDSO-F8
8
FLAT
DUAL
IPG20N06S415ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 90 mJ;
90 mJ
60 V
.0155 ohm
IPG20N06S4L14ATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Minimum DS Breakdown Voltage: 60 V; Moisture Sensitivity Level (MSL): 1;
.0137 ohm
SPB80N06S08ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 80 A; Case Connection: DRAIN;
BTS7904BATMA1
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0202 ohm; Transistor Element Material: SILICON; Terminal Position: SINGLE;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
40 A
.0202 ohm
TO-263
R-PSSO-G5
5
N-CHANNEL AND P-CHANNEL
160 A
IPB100N04S204ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 100 A; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
AVALANCHE RATED
810 mJ
100 A
.0033 ohm
400 A
IPB100N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: DRAIN; Transistor Element Material: SILICON;
IPB100N06S205ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 810 mJ; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 400 A;
IPB100N08S207ATMA1
IPB100N08S207ATMA1 by Infineon is a N-CHANNEL Power FET with 75V DS Breakdown Voltage and 0.0068 ohm Max RDS(on). It's used in applications requiring high pulsed drain current up to 400A, such as power supplies and motor control systems.
75 V
.0068 ohm
IPB100N08S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1; Case Connection: DRAIN;
.0087 ohm
IPB120N06S402ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .0024 ohm; Terminal Position: SINGLE;
560 mJ
480 A
IPB120N06S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JEDEC-95 Code: TO-263AB; Terminal Form: GULL WING;
392 mJ
.0028 ohm
IPB120N06S4H1ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: GULL WING; JEDEC-95 Code: TO-263AB;
1060 mJ
IPB160N04S203ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0029 ohm; Minimum DS Breakdown Voltage: 40 V; Package Body Material: PLASTIC/EPOXY;
ULTRA-LOW RESISTANCE
.0029 ohm
R-PSSO-G6
6
640 A
IPB160N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 160 A; Minimum DS Breakdown Voltage: 40 V; Maximum Pulsed Drain Current (IDM): 640 A;
.0037 ohm
IPB180N03S4LH0ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN;
980 mJ
180 A
.00095 ohm
720 A
IPB180N04S401ATMA1
Infineon's IPB180N04S401ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 0.0013 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance, it features 720A IDM and 550mJ EAS.
550 mJ
.0013 ohm
IPB180N06S4H1ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Avalanche Energy Rating (EAS): 700 mJ; Transistor Element Material: SILICON;
.0017 ohm
IPB45N06S4L08ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 180 A; Package Body Material: PLASTIC/EPOXY;
97 mJ
45 A
.0079 ohm
IPB45P03P4L11ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
110 mJ
.0111 ohm
IPB50N10S3L16ATMA1
IPB50N10S3L16ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 50A ID, and 0.0206 ohm RDS. It's used in power applications due to its 200A IDM and 330mJ EAS ratings, making it ideal for high-power systems requiring efficient switching capabilities.
.0206 ohm
245
MATTE TIN
IPB80N04S204ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 40 V;
.0034 ohm
IPB80N04S2H4ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 660 mJ; Additional Features: AVALANCHE RATED; No. of Terminals: 2;
660 mJ
IPB80N04S2L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.0031 ohm
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