Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB26CN10NGATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .026 ohm;
65 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
35 A
.026 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
140 A
Not Qualified
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPD25CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE; Transistor Element Material: SILICON;
.025 ohm
TO-252
IPB34CN10NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Operating Temperature: 175 Cel; No. of Terminals: 2;
47 mJ
27 A
.034 ohm
e3
58 W
108 A
FET General Purpose Powers
MATTE TIN
IPD33CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
.033 ohm
TO-252AA
IPB65R380C6ATMA1
IPB65R380C6ATMA1 by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 650V. It is designed for switching applications, offering a max pulsed drain current of 29A and a max drain-source on resistance of 0.38 ohm.
215 mJ
650 V
10.6 A
.38 ohm
29 A
TIN
IPD65R380C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;
IPB65R310CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11.4 A; Maximum Drain-Source On Resistance: .31 ohm; Terminal Position: SINGLE;
290 mJ
11.4 A
.31 ohm
34.4 A
Tin (Sn)
SPD04N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .95 ohm; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED
130 mJ
600 V
4.5 A
.95 ohm
150 Cel
13.5 A
IPB60R950C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .95 ohm; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
46 mJ
4.4 A
12 A
BSF077N06NT3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .0077 ohm; Case Connection: DRAIN;
150 mJ
60 V
13 A
.0077 ohm
R-MBCC-N3
3
METAL
CHIP CARRIER
224 A
NO LEAD
BOTTOM
BSO080P03NS3GXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3; Transistor Element Material: SILICON;
149 mJ
30 V
.008 ohm
R-PDSO-G8
8
P-CHANNEL
48 A
DUAL
BSB014N04LX3GXUMA1
Infineon Technologies' BSB014N04LX3GXUMA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and can handle a max pulsed drain current of 400A. This transistor is commonly used for switching applications.
260 mJ
40 V
180 A
.0014 ohm
e4
-40 Cel
89 W
400 A
SILVER NICKEL
BSB015N04NX3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; JESD-609 Code: e4;
.0015 ohm
BSC046N10NS3GATMA1
Infineon's BSC046N10NS3GATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 350mJ EAS, and 0.0046 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C. Suitable for high-power circuits due to its 156W Pd rating.
350 mJ
100 A
17 A
.0046 ohm
R-PDSO-N8
156 W
FET General Purpose Power
BSO211PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Elements: 2; Maximum Drain-Source On Resistance: .067 ohm;
LOGIC LEVEL COMPATIBLE
28 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.2 A
.067 ohm
18.4 A
BSO303SPHXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
97 mJ
7.2 A
.021 ohm
36 A
IPD65R250C6XTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-252; JESD-609 Code: e3;
.25 ohm
46 A
IPD65R250E6XTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 650 V;
IPB65R150CFDATMA1
Infineon's IPB65R150CFDATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 72A pulsed drain current, 0.15 ohm max on-resistance, and 614mJ avalanche energy rating. With a temp range of -55 to 150 °C, it's suitable for high-power enhancement mode operations in various electronic systems.
614 mJ
22.4 A
.15 ohm
-55 Cel
72 A
IPB65R099C6ATMA1
IPB65R099C6ATMA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, 0.099 ohm RDS(on), and 115A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 845 mJ.
845 mJ
.099 ohm
115 A
BSB280N15NZ3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Drain Current (Abs) (ID): 30 A; Operating Mode: ENHANCEMENT MODE;
120 mJ
150 V
30 A
9 A
.028 ohm
57 W
120 A
BSL207SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
44 mJ
6 A
.041 ohm
R-PDSO-G6
6
24 A
AEC-Q101
BSL211SPL6327HTSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
26 mJ
4.7 A
18.8 A
IPB65R420CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8.7 A; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
227 mJ
8.7 A
.42 ohm
BSB028N06NN3GXUMA1
Infineon's BSB028N06NN3GXUMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 360A IDM and 0.0028 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C. With SILICON element material and METAL-OXIDE SEMICONDUCTOR technology, this FET offers high performance in a CHIP CARRIER package.
590 mJ
90 A
22 A
.0028 ohm
78 W
360 A
BSC0901NSIATMA1
Infineon's BSC0901NSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and 0.0026 ohm RDS(ON), making it suitable for high-power operations. With a compact SMALL OUTLINE package and DUAL terminal position, it offers efficient performance in various electronic devices.
45 mJ
28 A
.0026 ohm
R-PDSO-F8
FLAT
IPB90R340C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .34 ohm; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 900 V;
678 mJ
900 V
15 A
.34 ohm
34 A
IPD65R1K4CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28.4 W; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
2.8 A
1.4 ohm
28.4 W
8.2 A
BSP135L6327HTSA1
Infineon's BSP135L6327HTSA1 is a N-CHANNEL Power FET with 600V DS breakdown voltage. Ideal for power applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.12A and on-resistance of 45 ohm, this MOSFET can handle up to 0.48A pulsed drain current efficiently at temperatures up to 150°C.
.12 A
45 ohm
R-PDSO-G4
4
DEPLETION MODE
.48 A
BSP149L6327HTSA1
Infineon's BSP149L6327HTSA1 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it offers 2.6A IDM and 1.8Ω RDS(on). With a DUAL terminal position and built-in diode, it suits applications requiring high drain current in small outline packages.
200 V
.66 A
1.8 ohm
2.6 A
BSL307SPL6327HTSA1
Infineon's BSL307SPL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 22A IDM, and 0.043 ohm RDS(on). Ideal for power management applications due to its small outline package, high drain current capacity, and low on-resistance. Operating in enhancement mode with a max temperature of 150°C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
5.5 A
.043 ohm
IPB65R660CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
115 mJ
.66 ohm
IPD65R660CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
SPB08P06PGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
70 mJ
8.8 A
.3 ohm
35.2 A
IPD50R280CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 42.9 A;
231 mJ
500 V
.28 ohm
42.9 A
IPD50R500CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Avalanche Energy Rating (EAS): 129 mJ; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
129 mJ
.5 ohm
BSZ023N04LSATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Drain Current (Abs) (ID): 40 A; Terminal Position: DUAL;
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
40 A
.0032 ohm
S-PDSO-F8
SQUARE
69 W
160 A
IPD50R1K4CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Minimum DS Breakdown Voltage: 500 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
49 mJ
3.1 A
4.8 A
42 W
IPD50R2K0CEBTMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2.4 A
22 W
IPD50R3K0CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Minimum DS Breakdown Voltage: 500 V; JESD-30 Code: R-PSSO-G2;
18 mJ
1.7 A
3 ohm
18 W
4.1 A
IPD50R800CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .8 ohm;
83 mJ
5 A
.8 ohm
40 W
15.5 A
IPD50R650CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Position: SINGLE; Transistor Application: SWITCHING;
102 mJ
6.1 A
.65 ohm
19 A
IPD50R380CEBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 98 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 500 V;
173 mJ
14.1 A
98 W
32.4 A
IPD65R950CFDBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.7 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .95 ohm;
50 mJ
3.9 A
36.7 W
11 A
IPB230N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; No. of Elements: 1;
13 mJ
.023 ohm
SPD02N80C3BTMA1
Infineon's SPD02N80C3BTMA1 is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 6A IDM, 90mJ EAS, and 2A ID. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and RDS(ON) of 2.7Ω for efficient performance in various electronic systems.
AVALANCHE RATED, HIGH VOLTAGE
90 mJ
800 V
2 A
2.7 ohm
SPD04N80C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
170 mJ
4 A
1.3 ohm
BSC020N03LSGATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: FLAT; Maximum Drain-Source On Resistance: .0029 ohm;
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
180 mJ
.0029 ohm
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