Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .95 ohm; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
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Power Field Effect Transistors (FET) IPB60R950C6ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
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JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
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IPB60R950C6ATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
LM2931Z-5.0RPG
Onsemi
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
SMBJ18CA
General Instrument
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBT2907ALT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
SS14
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520LT1
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Microsemi
MBRA340T3G
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
FDS9926A
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
SI4946BEY-T1-GE3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
IRFZ44NSTRL
International Rectifier
IRFZ44NSTRL by International Rectifier is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
PSMN4R8-100BSEJ
NXP Semiconductors
PSMN4R8-100BSEJ by NXP is a single N-channel power FET with 120A max drain current and 405W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as automotive systems or industrial equipment.
IRF640PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
FDD6685
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
PMV100EPAR
Nexperia
The Nexperia PMV100EPAR is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 9A IDM and 33mJ EAS, operating in ENHANCEMENT MODE at -55 to 175 °C. With a 0.13 ohm RDS(on), this transistor is suitable for various power management tasks in automotive and industrial sectors.
IRLML0100TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;
IRF9640STRLPBF
Vishay Intertechnology
Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.
IPB180P04P4L02ATMA2
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
2N7002PV,115
2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IRF540ZLPBF
IRF540ZLPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 92W and 0.0265 ohm Drain-Source On Resistance. Operating at up to 175°C, it features a METAL-OXIDE SEMICONDUCTOR technology in an IN-LINE package style.
BSP716NH6327XTSA1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
FDMS86300DC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
IRLML5203TRPBF
Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
IRF7103TRPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
AUIRF5210STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
RJK0651DPB-00-J5
Renesas Electronics
Renesas Electronics RJK0651DPB-00-J5 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.018 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks.
BSS138BKS,115
NXP Semiconductors' BSS138BKS,115 is an N-CHANNEL Power FET with 0.32A max drain current and 0.99W power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C.
IRF9Z34NSTRLPBF
IRF9Z34NSTRLPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 68A and 0.1 ohm RDS(ON), suitable for ENHANCEMENT MODE operation in various electronic devices. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, making it easy to mount on PCBs.
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IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
IPB65R110CFDAATMA1
Infineon's IPB65R110CFDAATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, 99.6A IDM, and 0.11 ohm RDS(on). Ideal for switching applications in automotive (AEC-Q101) due to its high current handling and low on-resistance.
IPB600N25N3GATMA1
IPB600N25N3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style make it suitable for surface mount designs.
IPB65R110CFDATMA1
IPB65R110CFDATMA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99.6A and EAS of 845mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.11 ohm RDS(ON) and can handle up to 31.2A drain current, making it ideal for high-power electronics.
IPB60R099CPAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
IPB65R150CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 150 Cel;
IPB60R099CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 800 mJ;
IPB65R190CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain Current (ID): 17.5 A; Maximum Operating Temperature: 150 Cel;
IPB65R065C7ATMA2
IPB60R060P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 151 A; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .06 ohm;
IPB65R190C7ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN; No. of Elements: 1;
IPB65R190CFDAATMA1
Infineon's IPB65R190CFDAATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Suitable for automotive use (AEC-Q101) with a max operating temperature of 150°C.
IPB60R160C6ATMA1
Infineon's IPB60R160C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 70A IDM, 0.16 ohm RDS(on), and 497mJ EAS rating. Its small outline package and GULL WING terminals make it suitable for surface mount designs in high-power systems.
IPB60R099C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Terminal Form: GULL WING;
IPB60R120P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IPB60R165CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
IPB65R099C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
IPB60R080P7ATMA1
IPB60R080P7ATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a built-in diode for switching applications, with 110A IDM and 0.08 ohm RDS(on). Ideal for enhancement mode operation in various power electronics systems.
IPB65R045C7ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 249 mJ;
IPB60R160C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 176 W; JEDEC-95 Code: TO-263AB; Maximum Drain-Source On Resistance: .16 ohm;
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