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IPB600N25N3GATMA1

Infineon Technologies

IPB600N25N3GATMA1 by Infineon Technologies

IPB600N25N3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style make it suitable for surface mount designs.

Median Price

$3.075

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,000 parts In-Stock

1+ parts

$2.570

100+ parts

$1.650

1k+ parts

$1.070

10k+ parts

-

1,000

$2.570

$1.650

$1.070

-

Chip1Stop

Japan . 2,608 parts In-Stock

1+ parts

$3.580

100+ parts

$2.320

1k+ parts

-

10k+ parts

-

2,608

$3.580

$2.320

-

-

DigiKey

USA . 8,927 parts In-Stock

1+ parts

$3.590

100+ parts

$1.641

1k+ parts

$1.241

10k+ parts

$1.172

8,927

$3.590

$1.641

$1.241

$1.172

Mouser Electronics

USA . 347 parts In-Stock

1+ parts

$3.870

100+ parts

$1.810

1k+ parts

$1.350

10k+ parts

-

347

$3.870

$1.810

$1.350

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Newark

USA . 431 parts In-Stock

1+ parts

$4.680

100+ parts

$2.440

1k+ parts

-

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431

$4.680

$2.440

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Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.209

10k+ parts

$1.201

3,000

-

-

$1.209

$1.201

Verical

USA . 2,608 parts In-Stock

1+ parts

-

100+ parts

$1.687

1k+ parts

$1.370

10k+ parts

-

2,608

-

$1.687

$1.370

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Rochester

USA . 347 parts In-Stock

1+ parts

-

100+ parts

$1.590

1k+ parts

$1.320

10k+ parts

$1.180

347

-

$1.590

$1.320

$1.180

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 47 parts In-Stock

1+ parts

$1.121

100+ parts

-

1k+ parts

-

10k+ parts

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47

$1.121

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$2.297

100+ parts

-

1k+ parts

-

10k+ parts

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50

$2.297

-

-

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Vyrian

USA . 6,753 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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6,753

-

-

-

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IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$4.446

10k+ parts

$4.390

2,000

-

-

$4.446

$4.390

Rutronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.740

10k+ parts

$1.340

1,000

-

-

$1.740

$1.340

Rotakorn

Sweden . 556 parts In-Stock

1+ parts

-

100+ parts

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556

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 24,146 parts In-Stock

1+ parts

$0.549

100+ parts

$0.527

1k+ parts

$0.505

10k+ parts

-

24,146

$0.549

$0.527

$0.505

-

Aztec Data Supply Inc.

USA . 1,354 parts In-Stock

1+ parts

$0.950

100+ parts

-

1k+ parts

-

10k+ parts

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1,354

$0.950

-

-

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Ampacity Inc.

Singapore . 6,705 parts In-Stock

1+ parts

$0.970

100+ parts

-

1k+ parts

-

10k+ parts

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6,705

$0.970

-

-

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Semicontronic

India . 2,264 parts In-Stock

1+ parts

$0.970

100+ parts

$0.946

1k+ parts

$0.941

10k+ parts

-

2,264

$0.970

$0.946

$0.941

-

Corphita

USA . 406 parts In-Stock

1+ parts

$1.062

100+ parts

-

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-

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406

$1.062

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Corohmni

South Africa . 359 parts In-Stock

1+ parts

$1.701

100+ parts

-

1k+ parts

-

10k+ parts

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359

$1.701

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-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$2.251

100+ parts

-

1k+ parts

$2.161

10k+ parts

-

2,000

$2.251

-

$2.161

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Argo Parts USA

USA . 3,532 parts In-Stock

1+ parts

$2.297

100+ parts

-

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10k+ parts

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3,532

$2.297

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Continental Prestige Electronics

USA . 1,741 parts In-Stock

1+ parts

$2.920

100+ parts

$1.910

1k+ parts

$1.290

10k+ parts

-

1,741

$2.920

$1.910

$1.290

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Component Stockers USA

USA . 1,883 parts In-Stock

1+ parts

$3.010

100+ parts

$2.080

1k+ parts

$1.860

10k+ parts

-

1,883

$3.010

$2.080

$1.860

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Microchip USA

USA . 6,217 parts In-Stock

1+ parts

$10.975

100+ parts

-

1k+ parts

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6,217

$10.975

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Robosynatics

Brazil . 25,211 parts In-Stock

1+ parts

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25,211

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Lucentia Tech

USA . 25,211 parts In-Stock

1+ parts

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100+ parts

$1.142

1k+ parts

$1.118

10k+ parts

$1.118

25,211

-

$1.142

$1.118

$1.118

Perfect Parts

USA . 6,218 parts In-Stock

1+ parts

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6,218

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RC Electronics

USA . 5,000 parts In-Stock

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5,000

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A-Z Elektronik GmbH

Germany . 2,801 parts In-Stock

1+ parts

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2,801

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-

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GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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1,000

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Overview

Unleash the power of efficiency with the Infineon Technologies IPB600N25N3GATMA1 Power Field Effect Transistor. Designed with precision and expertise, this N-CHANNEL transistor offers unparalleled performance in switching applications. With a maximum drain current of 25A and a minimal drain-source on resistance of 0.06 ohm, this transistor provides reliable and smooth operation. Whether you're looking to enhance your system's performance or optimize energy consumption, the IPB600N25N3GATMA1 is the perfect solution for your needs. Upgrade to excellence with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have high conductivity and fast switching speeds, making this transistor efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to protect the transistor from voltage spikes and reverse polarity, enhancing its reliability in a circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable operation in various electronic circuits.

Surface Mount: YES

The surface mount feature allows for easy and compact installation on circuit boards, making it suitable for space-constrained applications.

Minimum DS Breakdown Voltage: 250 V

With a high minimum breakdown voltage, this transistor can handle high voltage applications with ease.

Package Shape: RECTANGULAR

The rectangular package shape is versatile and allows for easy integration into different types of circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering onto circuit boards for reliable operation.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation ensures improved performance and efficiency in controlling the flow of current.

Maximum Pulsed Drain Current (IDM): 100 A

With a high maximum pulsed drain current, this transistor can handle sudden spikes in current without damage, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 210 mJ

The high avalanche energy rating allows the transistor to withstand high-energy transient events, ensuring reliability in demanding conditions.

No. of Terminals: 2

With two terminals, this transistor is easy to install and connect in a circuit, simplifying the overall design process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on a circuit board, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high efficiency and low power consumption for energy-efficient operation.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without degradation, ensuring reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing good performance and durability for various applications.

Terminal Finish: TIN

The tin terminal finish offers corrosion resistance and reliable solder connections, ensuring long-term stability in a circuit.

Maximum Drain Current (ID): 25 A

With a high maximum drain current rating, this transistor can handle significant current loads, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.06 ohm

The low drain-source on resistance minimizes power loss and heat generation, improving efficiency in circuit operation.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection in a circuit, making it easy to integrate into electronic systems.

Case Connection: DRAIN

The drain connection allows for efficient current flow and heat dissipation, ensuring optimal performance and reliability in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) IPB600N25N3GATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

210 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPB600N25N3GATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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