Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FDPF2710T by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.0425 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 62.5W and can handle up to 150 °C temperature.
Median Price
$6.150
Lifecycle Status
Suppliers In-Stock
6
In-Stock Inventory
1k+
DigiKey
1+ parts
100+ parts
$2.978
1k+ parts
$2.418
10k+ parts
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Mouser Electronics
$2.970
$2.770
Rochester
$2.410
$2.160
$2.030
Digiode
Vyrian
Chip Stock
Native Components
$10.340
Northwest PG Solutions
$11.374
$10.237
Microchip USA
$14.476
Ampacity Inc.
$51.050
iodParts Technologies Inc.
TANS Electronics
SupplyDigital Components
Problanco Electronics
A-Z Elektronik GmbH
Perfect Parts
Supply Digital
Authorized Procurement Solutions
Corphita
Component Stockers USA
Kulean Microsystems
UHIMA Technologies
Corohmni
Ensures durability and resistance to environmental factors, making the product suitable for a variety of applications.
Offers efficient current handling and control, enhancing performance in switching applications.
Provides a high level of voltage protection, ensuring reliability in high-power circuits.
Simplifies circuit design and offers added functionality with the built-in diode.
Allows for high current handling capabilities, suitable for demanding applications.
Ensures efficient power handling and heat dissipation, enhancing overall performance.
Can operate at high temperatures without compromising performance, suitable for harsh environments.
Power Field Effect Transistors (FET) FDPF2710T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
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Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
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Surface Mount:
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Transistor Application:
Transistor Element Material:
FDPF2710T Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ABS10-32.768KHZ-T
Abracon
Abracon's ABS10-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and wearables due to its compact size and low power consumption.
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
1N4148W-7-F
1N4148W-7-F by Diodes Inc. is a single rectifier diode with 0.715V max forward voltage and 100V max reverse voltage. Ideal for applications requiring fast switching speeds, it has a small outline package style and matte tin terminal finish, making it suitable for surface mount PCB designs.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
Diotec Semiconductor Ag
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
Pro-an Electronic
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
SISS71DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SISS71DN-T1-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. Featuring 40A max pulsed drain current and 0.082 ohm max on-resistance, it operates in enhancement mode with -50 to 150°C temperature range. Suitable for surface mount designs, this transistor offers high performance in a compact square package.
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
IRFP460LCPBF
Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
IRF7425TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
IRF530NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 17 A;
AO4490L
Alpha & Omega Semiconductor
AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
IRFP250NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain Current (ID): 30 A; No. of Terminals: 3;
IRF9540NPBF
Infineon Technologies
IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
DMG2301L-7
DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.
IPT020N10N3ATMA1
IPT020N10N3ATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 1200A IDM, and 0.02 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation capability.
IRLML6246TRPBF
IRLML6246TRPBF by Infineon is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 16A and ID of 4.1A, with 0.046 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
2N7000
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
AUIRF540Z
AUIRF540Z by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0265 ohm max drain-source resistance. Operating in enhancement mode, it has a 175°C max temp rating and 92W power dissipation capability.
SI7149ADP-T1-GE3
SI7149ADP-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0052 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with DUAL terminals and DRAIN case connection.
FDS8858CZ
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
FDD4243_F085
Fairchild Semiconductor's FDD4243_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 24A Drain Current, and 0.044 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 42W and wide operating temperature range (-55 to 175 °C).
IPB120P04P4L03ATMA2
IPB120P04P4L03ATMA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0049 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRLL024NTRPBF
IRLL024NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 3.1A Max Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 12A Pulsed Drain Current, and 0.065 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
G3R160MT12J
Genesic Semiconductor
AUIRF7759L2TR1
AUIRF7759L2TR1 by International Rectifier is a N-CHANNEL Power FET with 375A ID and 125W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR transistor offers robust performance in demanding environments.
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FDPF10N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (ID): 10 A; Minimum DS Breakdown Voltage: 600 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
FDPF12N50NZ
FDPF12N50NZ by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 46A and 0.52 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 42W.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Drain-Source On Resistance: .52 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDPF44N25T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
FDPF5N50UT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Drain-Source On Resistance: 2 ohm; Maximum Pulsed Drain Current (IDM): 16 A;
FDPF5N50UT by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 16A and EAS of 216mJ, suitable for SWITCHING applications. With a package style of FLANGE MOUNT and operating temperature up to 150°C, it offers high power dissipation at 28W in an ENHANCEMENT MODE configuration.
FDPF5N50NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Case Connection: ISOLATED; Maximum Drain Current (ID): 4.5 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDPF18N20FT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
FDPF18N20FT by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 72A and a max power dissipation of 41W.
FDPF3N50NZ
FDPF3N50NZ by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 12A and EAS of 113mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features a max power dissipation of 27W and an RDS(on) of 2.5 ohm, making it ideal for high-power requirements.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3;
FDPF4N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; JEDEC-95 Code: TO-220AB; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 3.8 A;
FDPF20N50T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38.5 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
FDPF20N50T by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.23 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W at 150°C temperature.
FDPF7N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
FDPF7N60NZ by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 600V. It is used for switching applications and has a max pulsed drain current of 26A.
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