Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Case Connection: ISOLATED; Maximum Drain Current (ID): 4.5 A;
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Power Field Effect Transistors (FET) FDPF5N50NZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
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FDPF5N50NZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Obsolescence/ EOL - Multiple Parts obs 30/Jun/2022
PCN Design/Specification - Logo 17/Aug/2017
PCN Assembly/Origin - Assembly/Test 17/Nov/2023
PCN Packaging - Mult Devices 24/Oct/2017
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
1N4148
Good-ark Electronics
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
STM32H743XIH6
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
LM107H
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;
BSS84PH6327XTSA2
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
IRF5305PBF
IRF5305PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.06 ohm RDS(ON), suitable for high-power circuits. With a max power dissipation of 110W and operating temperature up to 175°C, it ensures reliable performance in various environments.
FDS4465
FDS4465 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 13.5A and max power dissipation of 2.5W.
G3R160MT12J
Genesic Semiconductor
Power Field-Effect Transistors;
BSP318SH6327XTSA1
Infineon's BSP318SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 10.4A Pulsed Drain Current. Ideal for automotive applications, it features a built-in diode, 0.15 ohm On Resistance, and 260°C Peak Reflow Temperature.
IRF840SPBF
Vishay Intertechnology
Vishay Intertechnology's IRF840SPBF is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 510mJ EAS, and 0.85 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W and can withstand up to 150°C.
IPB180P04P4L02ATMA2
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IRLML2502TR
International Rectifier
IRLML2502TR by International Rectifier is a N-CHANNEL FET for switching applications. It has a 20V DS breakdown voltage, 4.2A max drain current, and 0.045 ohm max on-resistance. With a built-in diode, it operates in enhancement mode with 33A pulsed drain current ideal for power management in compact electronic devices.
SIS413DN-T1-GE3
Vishay Intertechnology's SIS413DN-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 70A max pulsed drain current, 0.0094 ohm max RDS(on), and 20mJ avalanche energy rating. Suitable for enhancement mode operation in small outline packages with drain case connection.
AUIRF7759L2TR
AUIRF7759L2TR by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage and 640A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.0023 ohm On Resistance, and operates in ENHANCEMENT MODE.
JANTX2N6796
Omnirel
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; JESD-30 Code: O-MBCY-W3; Terminal Finish: Tin/Lead (Sn/Pb);
IRLML6401
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
BSC067N06LS3GXT
BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
IRF9530PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 12 A;
BSC160N15NS5ATMA1
BSC160N15NS5ATMA1 by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 224A and 0.016 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material make it reliable for high-power operations.
2N7002DW
Diodes Incorporated
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
IRF740APBF
Vishay Intertechnology's IRF740APBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 630mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 125W, making it suitable for high-power electronic circuits.
IRF9530
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Maximum Drain Current (ID): 12 A;
SQJ459EP-T1_GE3
The Vishay Intertechnology SQJ459EP-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 200A IDM. Ideal for power applications, it features a built-in diode, 0.018 ohm RDS(on), and 80mJ EAS rating. Suitable for enhancement mode operation in various electronic systems requiring high current handling capabilities.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
FDS2582
FDS2582 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a built-in diode, 4.1A Drain Current, and 0.066 ohm On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with an EAS of 252mJ and can handle up to 2.5W power dissipation.
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FDPF10N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Drain Current (ID): 10 A; Minimum DS Breakdown Voltage: 600 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
FDPF12N50NZ
FDPF12N50NZ by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 46A and 0.52 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 42W.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Drain-Source On Resistance: .52 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDPF44N25T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
FDPF5N50UT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Drain-Source On Resistance: 2 ohm; Maximum Pulsed Drain Current (IDM): 16 A;
FDPF5N50UT by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 16A and EAS of 216mJ, suitable for SWITCHING applications. With a package style of FLANGE MOUNT and operating temperature up to 150°C, it offers high power dissipation at 28W in an ENHANCEMENT MODE configuration.
FDPF5N50NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDPF18N20FT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
FDPF18N20FT by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 72A and a max power dissipation of 41W.
FDPF3N50NZ
FDPF3N50NZ by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 12A and EAS of 113mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features a max power dissipation of 27W and an RDS(on) of 2.5 ohm, making it ideal for high-power requirements.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSFM-T3;
FDPF4N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; JEDEC-95 Code: TO-220AB; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 3.8 A;
FDPF20N50T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38.5 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
FDPF20N50T by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.23 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W at 150°C temperature.
FDPF7N60NZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33 W; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
FDPF7N60NZ by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 600V. It is used for switching applications and has a max pulsed drain current of 26A.
FDPF5N50NZU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
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