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IPB60R099CPAATMA1

Infineon Technologies

IPB60R099CPAATMA1 by Infineon Technologies

Infineon's IPB60R099CPAATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, 93A IDM, and 0.105 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temperature of 175°C.

Median Price

$6.316

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 100 parts In-Stock

1+ parts

$5.892

100+ parts

$4.470

1k+ parts

$4.073

10k+ parts

-

100

$5.892

$4.470

$4.073

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Element14

Singapore . 642 parts In-Stock

1+ parts

$6.098

100+ parts

$4.853

1k+ parts

$4.757

10k+ parts

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642

$6.098

$4.853

$4.757

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Farnell

UK . 642 parts In-Stock

1+ parts

$6.533

100+ parts

$4.714

1k+ parts

$4.624

10k+ parts

-

642

$6.533

$4.714

$4.624

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Chip1Stop

Japan . 737 parts In-Stock

1+ parts

$7.730

100+ parts

$4.450

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-

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737

$7.730

$4.450

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Newark

USA . 274 parts In-Stock

1+ parts

$8.340

100+ parts

$4.480

1k+ parts

$3.990

10k+ parts

-

274

$8.340

$4.480

$3.990

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Mouser Electronics

USA . 465 parts In-Stock

1+ parts

$8.480

100+ parts

$4.230

1k+ parts

$3.890

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465

$8.480

$4.230

$3.890

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DigiKey

USA . 129 parts In-Stock

1+ parts

$10.240

100+ parts

$5.123

1k+ parts

$4.359

10k+ parts

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129

$10.240

$5.123

$4.359

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Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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$5.027

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2,000

-

-

$5.027

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Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.889

10k+ parts

$3.851

1,000

-

-

$3.889

$3.851

EBV Elektronik

Germany . 1,000 parts In-Stock

1+ parts

-

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1,000

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Rochester

USA . 751 parts In-Stock

1+ parts

-

100+ parts

$3.380

1k+ parts

$3.030

10k+ parts

$2.850

751

-

$3.380

$3.030

$2.850

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 482 parts In-Stock

1+ parts

$3.658

100+ parts

-

1k+ parts

-

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482

$3.658

-

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$7.393

100+ parts

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1,000

$7.393

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$6.390

10k+ parts

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1,000

-

-

$6.390

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Vyrian

USA . 241 parts In-Stock

1+ parts

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241

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Distributors (Availability)

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Corohmni

South Africa . 326 parts In-Stock

1+ parts

$0.640

100+ parts

-

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-

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326

$0.640

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Aztec Data Supply Inc.

USA . 936 parts In-Stock

1+ parts

$0.670

100+ parts

-

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936

$0.670

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Modulus Dynamics

Lithuania . 2,073 parts In-Stock

1+ parts

$0.761

100+ parts

$0.731

1k+ parts

$0.700

10k+ parts

-

2,073

$0.761

$0.731

$0.700

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Ampacity Inc.

Singapore . 453 parts In-Stock

1+ parts

$3.270

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453

$3.270

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Semicontronic

India . 380 parts In-Stock

1+ parts

$3.310

100+ parts

$3.227

1k+ parts

$3.211

10k+ parts

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380

$3.310

$3.227

$3.211

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Corphita

USA . 713 parts In-Stock

1+ parts

$3.465

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713

$3.465

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Continental Prestige Electronics

USA . 639 parts In-Stock

1+ parts

$6.410

100+ parts

$4.790

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639

$6.410

$4.790

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Microchip USA

USA . 7,230 parts In-Stock

1+ parts

$14.672

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7,230

$14.672

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A-Z Elektronik GmbH

Germany . 10,000 parts In-Stock

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RC Electronics

USA . 7,704 parts In-Stock

1+ parts

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100+ parts

$6.720

1k+ parts

$6.130

10k+ parts

$5.950

7,704

-

$6.720

$6.130

$5.950

Perfect Parts

USA . 6,721 parts In-Stock

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6,721

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$6.847

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3,000

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$6.847

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$7.246

1k+ parts

$7.024

10k+ parts

$6.876

2,000

-

$7.246

$7.024

$6.876

Argo Parts USA

USA . 53 parts In-Stock

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53

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Overview

Transform the way you power your devices with the IPB60R099CPAATMA1 from Infineon Technologies. This high-quality Power FET boasts a wide range of applications in switching, offering enhanced performance and reliability. With its N-CHANNEL configuration and built-in diode, this transistor ensures efficient operation while maximizing energy savings. Trust in the expertise of Infineon Technologies to deliver cutting-edge technology that meets your needs. Upgrade to the IPB60R099CPAATMA1 and experience superior power control like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the FET, ensuring reliability and durability.

Minimum DS Breakdown Voltage: 600 V

Allows for high voltage switching applications, making it suitable for a wide range of power electronics projects.

Maximum Pulsed Drain Current (IDM): 93 A

Capable of handling high current pulses, ideal for applications where short bursts of high power are required.

Avalanche Energy Rating (EAS): 800 mJ

Ability to withstand high-energy spikes, ensuring the FET can operate reliably in harsh environments.

Maximum Operating Temperature: 175 °C

Has a high temperature rating, allowing it to operate efficiently even in demanding thermal conditions.

Technical Specifications

Power Field Effect Transistors (FET) IPB60R099CPAATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

800 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

31 A

Maximum Drain-Source On Resistance:

.105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

93 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IPB60R099CPAATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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