Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NVB6411ANT4G
Onsemi
NVB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 285A IDM. Ideal for applications requiring high power dissipation, such as automotive electronics due to AEC-Q101 standard compliance.
470 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
77 A
.014 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
217 W
285 A
AEC-Q101
FET General Purpose Power
YES
MATTE TIN
GULL WING
SINGLE
30
SILICON
NVB6412ANT4G
NVB6412ANT4G by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
300 mJ
58 A
.0182 ohm
167 W
240 A
TIN
NVB6413ANT4G
NVB6413ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 178A IDM. Ideal for applications requiring high power dissipation up to 136W, such as automotive systems due to AEC-Q101 standard compliance.
200 mJ
42 A
.028 ohm
136 W
178 A
NVB5860NT4G
NVB5860NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 660A IDM, and 0.003 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
735 mJ
60 V
220 A
.003 ohm
283 W
660 A
IPD320N20N3GBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 136 A; Transistor Element Material: SILICON; JESD-609 Code: e3;
190 mJ
200 V
34 A
.032 ohm
TO-252AA
136 A
SWITCHING
NTMFS4982NFT1G
NTMFS4982NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(on). With a max power dissipation of 89.3W and operating temperature of 150 °C, it offers high performance in a small outline package.
125 mJ
30 V
36 A
26.5 A
.0019 ohm
R-PDSO-F5
5
150 Cel
89.3 W
350 A
Other Transistors
FLAT
DUAL
NTMFS4982NFT3G
NTMFS4982NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 350A IDM, and 0.0019 ohm RDS(ON). Ideal for SWITCHING applications, it has a max power dissipation of 89.3W and operates at temperatures up to 150 °C.
NVMFD5852NLT1G
NVMFD5852NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 329A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 175 °C max operating temp and AEC-Q101 reference standard compliance.
80 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
44 A
15 A
.012 ohm
R-PDSO-F6
6
27 W
329 A
NVMFD5853NLT1G
NVMFD5853NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 165A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
40 mJ
12 A
.015 ohm
24 W
165 A
UPA2813T1L-E2-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 30 V;
27 A
.0062 ohm
P-CHANNEL
52 W
NTMFS4C05NT3G
NTMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 174A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.005 ohm RDS(on), and operates in the -55 to 150 °C temperature range.
84 mJ
21.7 A
11.9 A
.005 ohm
59 pF
-55 Cel
33 W
174 A
STD24N06LT4G
STD24N06LT4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.045 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount designs with a max power dissipation of 62.5W at 175 °C.
162 mJ
24 A
.045 ohm
62.5 W
72 A
STD25P03LT4G
The Onsemi STD25P03LT4G is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM and 0.08 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. This MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals, meeting AEC-Q101 standards.
25 A
.08 ohm
75 A
STH240N75F3-2
STMicroelectronics
STH240N75F3-2 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 180A ID, and 3Ω RDS(on). Ideal for SWITCHING applications due to its 720A IDM and 300W Pd. The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C.
600 mJ
75 V
180 A
3 ohm
NOT SPECIFIED
300 W
720 A
FET General Purpose Powers
NVD5890NLT4G
NVD5890NLT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 123A max drain current. Ideal for switching applications, it features a built-in diode, 320mJ avalanche energy rating, and 0.0055 ohm max on-resistance. Suitable for high-power operations in automotive electronics due to AEC-Q101 compliance.
320 mJ
123 A
.0055 ohm
107 W
400 A
STB15N65M5
STB15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 44A IDM, and 0.34 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 85W Power Dissipation and -55 to 150 °C Temperature Range.
160 mJ
650 V
11 A
.34 ohm
TO-263AB
245
85 W
Matte Tin (Sn) - annealed
STB31N65M5
STB31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount configurations, this MOSFET is designed for efficient power management in various electronic devices.
22 A
150 W
UPA2379T1P-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: TIN BISMUTH; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 8 A;
8 A
e6
1.8 W
TIN BISMUTH
NVD4856NT4G
NVD4856NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Max Pulsed Drain Current, and 0.0068 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its 60W Power Dissipation capability.
180.5 mJ
25 V
89 A
13.3 A
.0068 ohm
60 W
179 A
SPD07N20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
AVALANCHE RATED
120 mJ
7 A
.4 ohm
TO-252
28 A
FDB3632_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
338 mJ
.009 ohm
310 W
UPA2670T1R-E2-AX
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; JESD-609 Code: e4; Maximum Drain Current (Abs) (ID): 3 A; Terminal Finish: NICKEL PALLADIUM GOLD;
3 A
e4
2.3 W
NICKEL PALLADIUM GOLD
UPA2735GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
16 A
2.5 W
UPA2736GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 14 A;
14 A
UPA2737GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 11 A;
UPA2738GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
10 A
UPA2812T1L-E2-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .0048 ohm;
30 A
.0048 ohm
UPA2820T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
16 W
UPA2821T1L-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
26 A
UPA2822T1L-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 34 A; Minimum DS Breakdown Voltage: 30 V;
.0026 ohm
UPA2825T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
16.5 W
DMN3025LFG-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 30 V; No. of Elements: 1;
HIGH RELIABILITY
7.5 A
.018 ohm
S-PDSO-N5
SQUARE
60 A
NO LEAD
NTMFS4C13NT3G
NTMFS4C13NT3G by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 106A and EAS of 22mJ, making it suitable for high-power operations. With a low 0.0091 ohm RDS(on), this MOSFET offers efficient performance in various electronic devices.
22 mJ
38 A
7.2 A
.0091 ohm
127 pF
21.6 W
106 A
NVB5404NT4G
NVB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 670A IDM, 1000mJ EAS, and 0.0045 ohm RDS(on). Package: PLASTIC/EPOXY, GULL WING terminals, and operates up to 175°C. AEC-Q101 compliant for automotive use.
1000 mJ
167 A
.0045 ohm
254 W
670 A
NVB5860NLT4G
NVB5860NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 660A IDM, 735mJ EAS, and 0.0036 ohm RDS(ON). With a max power dissipation of 283W and operating temperature of 175 °C, it is suitable for high-power electronic systems.
130 A
.0036 ohm
NVB60N06T4G
NVB60N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. Suitable for surface mount with GULL WING terminals, it has an EAS of 454mJ and AEC-Q101 standard compliance.
454 mJ
NVD3055L170T4G
NVD3055L170T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 27A IDM, and 0.17 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 175 °C Max Operating Temp and 30mJ EAS.
30 mJ
9 A
.17 ohm
28.5 W
STB32NM50N
STB32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 190W max power dissipation. The transistor features a built-in diode, GULL WING terminals, and can withstand up to 150 °C operating temperature.
340 mJ
500 V
.13 ohm
190 W
88 A
STH260N6F6-6
STH260N6F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
STH400N4F6-2
STH400N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring robust performance.
STH400N4F6-6
STH400N4F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. This single configuration transistor is surface mountable, utilizing metal-oxide semiconductor technology.
NDD01N60T4G
NDD01N60T4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 46W in enhancement mode operation. Suitable for use in various electronic devices due to its N-channel configuration and built-in diode.
13 mJ
600 V
1.5 A
8.5 ohm
3
46 W
6 A
NDD02N40T4G
NDD02N40T4G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for power applications requiring high drain current handling capabilities.
400 V
1.7 A
39 W
6.9 A
NDT01N60T1G
Onsemi's NDT01N60T1G is a Power FET with 600V DS Breakdown Voltage, 1.5A IDM, and 8.5 ohm RDS(on). Ideal for applications requiring high power dissipation up to 2.5W in enhancement mode operation at temperatures up to 150 °C.
.4 A
TO-261AA
R-PDSO-G4
4
NVMD6N03R2G
NVMD6N03R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.032 ohm RDS(ON). It's used for SWITCHING applications in automotive (AEC-Q101) due to its 30A IDM and 325mJ EAS ratings.
ULTRA LOW ON RESISTANCE
325 mJ
R-PDSO-G8
8
Tin (Sn)
NVMFD5873NLT1G
NVMFD5873NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 190A pulsed drain current, and 0.013 ohm max on-resistance. It is used in automotive applications due to its AEC-Q101 reference standard compliance and 175°C max operating temperature.
.013 ohm
190 A
STD30NF04LT
STD30NF04LT by STMicroelectronics is a N-CHANNEL FET with 30A max drain current and 50W max power dissipation. Ideal for power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
50 W
STH110N10F7-2
STH110N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
110 A
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