Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPD230N06NGBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Additional Features: AVALANCHE RATED; No. of Terminals: 2;
AVALANCHE RATED
150 mJ
SINGLE WITH BUILT-IN DIODE
60 V
30 A
.023 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
120 A
Not Qualified
YES
GULL WING
SINGLE
SWITCHING
SILICON
IPD250N06N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
13 mJ
DRAIN
28 A
.025 ohm
112 A
IPD400N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED;
80 mJ
27 A
.04 ohm
TO-252
e3
108 A
TIN
IPD60R2K0C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Terminals: 2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
11 mJ
600 V
2 ohm
6 A
IPD60R450E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: SINGLE; Qualification: Not Qualified;
185 mJ
.45 ohm
150 Cel
26 A
IPD60R750E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Transistor Application: SWITCHING;
72 mJ
.75 ohm
15.7 A
IPD65R600E6ATMA1
Infineon's IPD65R600E6ATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 18A and 0.6 ohm RDS(on). Operating in enhancement mode, it has an EAS of 142mJ and can withstand temperatures from -55 to 150 °C.
142 mJ
650 V
.6 ohm
-55 Cel
18 A
BSC014N03LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e3; Case Connection: DRAIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
290 mJ
30 V
34 A
.0021 ohm
R-PDSO-F8
8
400 A
FLAT
DUAL
BSC014N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; Avalanche Energy Rating (EAS): 340 mJ; Terminal Form: FLAT;
340 mJ
.00175 ohm
BSC016N03LSGATMA1
BSC016N03LSGATMA1 by Infineon is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.0023 ohm RDS(ON), and 32A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 400A IDM, and operates in ENHANCEMENT MODE. Suitable for surface mount with a rectangular package style and SILICON transistor element material.
32 A
.0023 ohm
BSC017N04NSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 40 V;
295 mJ
40 V
100 A
.0017 ohm
139 W
BSC050N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 30 V;
35 mJ
16 A
.0063 ohm
320 A
BSC072N03LDGATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
90 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
11.5 A
.0094 ohm
80 A
BSC090N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; No. of Terminals: 8; Package Shape: RECTANGULAR;
10 mJ
12 A
.0112 ohm
192 A
BSC100N03LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; No. of Elements: 1;
13 A
.0142 ohm
176 A
BSC130P03LSGAUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 8; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 30 V;
148 mJ
.013 ohm
3
P-CHANNEL
90 A
BSC152N10NSFGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
155 mJ
100 V
9.4 A
.0152 ohm
252 A
BSC159N10LSFGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
LOGIC LEVEL COMPATIBLE
63 A
.0159 ohm
114 W
FET General Purpose Powers
BSC200P03LSGAUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
98 mJ
9.9 A
.02 ohm
50 A
BSC750N10NDGATMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 17 mJ; No. of Terminals: 8; No. of Elements: 2;
17 mJ
3.2 A
.075 ohm
52 A
BSZ058N03MSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; Case Connection: DRAIN;
55 mJ
40 A
.0064 ohm
R-PDSO-N8
160 A
NO LEAD
BSZ105N04NSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Case Connection: DRAIN; JESD-30 Code: S-PDSO-N8;
20 mJ
11 A
.0105 ohm
S-PDSO-N8
SQUARE
IPB009N03LGATMA1
Infineon's IPB009N03LGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1260A IDM and 0.0013 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor with BUILT-IN DIODE is designed for high-power, surface-mount circuits.
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
610 mJ
180 A
.0013 ohm
TO-263AA
R-PSSO-G6
6
1260 A
MATTE TIN
IPB020NE7N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;
1100 mJ
75 V
.002 ohm
TO-263AB
480 A
IPB022N04LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 167 W; Terminal Position: SINGLE; Transistor Element Material: SILICON;
.0029 ohm
167 W
FET General Purpose Power
IPB023N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: PLASTIC/EPOXY;
330 mJ
140 A
TO-263
560 A
IPB031NE7N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE;
640 mJ
.0031 ohm
IPB034N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
149 mJ
.0034 ohm
IPB049NE7N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Terminal Position: SINGLE; JESD-30 Code: R-PSSO-G2;
370 mJ
.0049 ohm
150 W
IPB052N04NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
70 A
.0052 ohm
79 W
IPB075N04LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
350 A
IPB093N04LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 47 W; Maximum Drain-Source On Resistance: .0093 ohm; Case Connection: DRAIN;
46 A
.0093 ohm
47 W
IPB048N06LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 100 A;
810 mJ
.0044 ohm
IPB050N06NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Case Connection: DRAIN;
.0047 ohm
300 W
IPD042P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
269 mJ
.0068 ohm
280 A
IPD127N06LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 240 mJ; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
240 mJ
.0127 ohm
200 A
IPD800N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 43 mJ; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
43 mJ
.08 ohm
64 A
IPB60R380C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 600 V;
HIGH VOLTAGE
210 mJ
10.6 A
.38 ohm
IPB042N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2; JESD-609 Code: e3;
60 mJ
.006 ohm
IPB055N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1; Avalanche Energy Rating (EAS): 60 mJ;
.0078 ohm
IPD082N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
110 mJ
.0082 ohm
IPB096N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0141 ohm;
40 mJ
35 A
.0141 ohm
245 A
IPB60R099C6ATMA1
Infineon's IPB60R099C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 112A IDM, 796mJ EAS, and 0.099 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a small outline package.
796 mJ
37.9 A
.099 ohm
IPB60R280C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 284 mJ; Transistor Application: SWITCHING;
284 mJ
13.8 A
.28 ohm
IPB60R600C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .6 ohm; Avalanche Energy Rating (EAS): 133 mJ; JESD-30 Code: R-PSSO-G2;
133 mJ
7.3 A
19 A
IPD60R600C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Drain Current (ID): 7.3 A;
BSC080N03LSGATMA1
BSC080N03LSGATMA1 by Infineon is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. Features include 212A max pulsed drain current, 0.012 ohm max drain-source resistance, and 15mJ avalanche energy rating. Suitable for enhancement mode operation in high-power electronics due to its small outline package and high operating temperature of 150°C.
15 mJ
14 A
.012 ohm
212 A
BSZ042N04NSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 40 V; No. of Elements: 1; JESD-30 Code: R-PDSO-N8;
AVALANCHE RATED, HIGH VOLTAGE
.0042 ohm
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