Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BSZ088N03LSGATMA1
Infineon Technologies
Infineon's BSZ088N03LSGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.013 ohm RDS(on), and 25mJ EAS. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and comes in an 8-terminal SMALL OUTLINE package.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
25 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
40 A
.013 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-N8
e3
1
8
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
160 A
Not Qualified
YES
TIN
NO LEAD
DUAL
SWITCHING
SILICON
BSZ088N03MSGATMA1
Infineon BSZ088N03MSGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0097 ohm RDS(on), and 25mJ EAS. Operating in ENHANCEMENT MODE, it has a max temp of 175°C and comes in an 8-terminal SMALL OUTLINE package.
.0097 ohm
IPB65R280C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 650 V;
290 mJ
650 V
.28 ohm
TO-263AB
R-PSSO-G2
2
150 Cel
39 A
GULL WING
SINGLE
IPB041N04NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G2;
60 mJ
40 V
80 A
.0041 ohm
94 W
400 A
FET General Purpose Power
MATTE TIN
IPD60R520C6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 22 A; No. of Terminals: 2;
153 mJ
600 V
8.1 A
.52 ohm
TO-252
22 A
IPB021N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
634 mJ
60 V
120 A
.0021 ohm
NOT SPECIFIED
480 A
IPB034N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 80 A; Avalanche Energy Rating (EAS): 70 mJ;
70 mJ
.0047 ohm
IPB065N03LGATMA1
Infineon's IPB065N03LGATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 350A IDM, 60mJ EAS, and 0.0095 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and 56W power dissipation.
50 A
.0095 ohm
56 W
350 A
IPB067N08N3GATMA1
Infineon's IPB067N08N3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, 320A IDM, and 0.0067 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with GULL WING terminals ensures reliable performance in various environments.
150 mJ
80 V
.0067 ohm
136 W
320 A
IPD12CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-252AA;
FAST SWITCHING
154 mJ
100 V
67 A
.0124 ohm
TO-252AA
268 A
IPD78CN10NGBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified; Transistor Element Material: SILICON;
17 mJ
13 A
.078 ohm
52 A
IPB049N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-263AB;
LOGIC LEVEL COMPATIBLE
77 mJ
IPB090N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JEDEC-95 Code: TO-263AB; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED
43 mJ
.009 ohm
200 A
IPB260N06N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Avalanche Energy Rating (EAS): 13 mJ; Package Style (Meter): SMALL OUTLINE;
13 mJ
27 A
.0257 ohm
108 A
BSC0908NSATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 34 V; Case Connection: DRAIN; Package Shape: RECTANGULAR;
10 mJ
34 V
14 A
.0127 ohm
R-PDSO-F8
FLAT
BSO303PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 7 A; JESD-609 Code: e3;
97 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
7 A
.021 ohm
R-PDSO-G8
3
P-CHANNEL
32.8 A
IPB65R110CFDATMA1
IPB65R110CFDATMA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99.6A and EAS of 845mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.11 ohm RDS(ON) and can handle up to 31.2A drain current, making it ideal for high-power electronics.
845 mJ
31.2 A
.11 ohm
-55 Cel
99.6 A
Tin (Sn)
IPB147N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
20 mJ
20 A
.0217 ohm
140 A
SPD06N80C3BTMA1
Infineon Technologies' SPD06N80C3BTMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 800V, making it suitable for switching applications. With a max pulsed drain current of 18A and low on-resistance of 0.9 ohm, it offers efficient performance in various electronic devices.
AVALANCHE RATED, HIGH VOLTAGE
230 mJ
800 V
6 A
.9 ohm
260
18 A
40
IPB65R280E6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-G2; Moisture Sensitivity Level (MSL): 1;
IPD50R399CPBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN; Avalanche Energy Rating (EAS): 215 mJ;
215 mJ
500 V
9 A
.399 ohm
IPD65R380E6BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .38 ohm; Avalanche Energy Rating (EAS): 215 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.38 ohm
29 A
BSB008NE2LXXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Maximum Drain-Source On Resistance: .0008 ohm; Package Shape: RECTANGULAR;
ULTRA LOW RESISTANCE
600 mJ
25 V
180 A
.0008 ohm
R-MBCC-N3
e4
-40 Cel
METAL
CHIP CARRIER
89 W
SILVER NICKEL
BOTTOM
BSC016N04LSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 295 mJ; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
295 mJ
100 A
.0023 ohm
BSF024N03LT3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Terminal Form: NO LEAD;
125 mJ
15 A
.0032 ohm
BSF030NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 28 W; No. of Terminals: 2; JESD-30 Code: R-MBCC-N2;
50 mJ
75 A
R-MBCC-N2
28 W
300 A
BSF050N03LQ3GXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: BOTTOM;
.007 ohm
240 A
BSO613SPVGHUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; No. of Elements: 1;
3.44 A
.13 ohm
13.8 A
BSZ165N04NSGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; No. of Terminals: 8; Maximum Pulsed Drain Current (IDM): 124 A;
5 mJ
31 A
.0165 ohm
25 W
124 A
FET General Purpose Powers
IPB023N04NGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .0023 ohm; Minimum DS Breakdown Voltage: 40 V;
90 A
IPB039N04LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Case Connection: DRAIN; Maximum Operating Temperature: 175 Cel;
.0052 ohm
IPB60R299CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
11 A
.299 ohm
34 A
IPB60R385CPATMA1
IPB60R385CPATMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, 27A IDM, and 0.385 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. The transistor features a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
227 mJ
.385 ohm
IPB65R600C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 18 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
142 mJ
.6 ohm
IPD036N04LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 55 mJ; No. of Terminals: 2;
55 mJ
.0049 ohm
IPD038N04NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0038 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 175 Cel;
.0038 ohm
IPD053N08N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
190 mJ
.0053 ohm
360 A
IPD088N04LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 350 A; Minimum DS Breakdown Voltage: 40 V;
47 A
.0088 ohm
IPD105N03LGATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
30 mJ
35 A
.0105 ohm
245 A
IPD105N04LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Avalanche Energy Rating (EAS): 10 mJ; JEDEC-95 Code: TO-252AA;
280 A
IPD160N04LGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 210 A; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 175 Cel;
30 A
.016 ohm
210 A
IPD170N04NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Minimum DS Breakdown Voltage: 40 V; Package Body Material: PLASTIC/EPOXY;
.017 ohm
IPD200N15N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 50 A; Package Style (Meter): SMALL OUTLINE;
170 mJ
150 V
.02 ohm
150 W
IPB530N15N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 84 A;
21 A
.053 ohm
84 A
IPD530N15N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 150 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPD60R385CPBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
IPD60R520CPBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
166 mJ
6.8 A
17 A
IPD640N06LGBTMA1
IPD640N06LGBTMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 72A IDM, and 0.064 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in diode, GULL WING terminals, and operates up to 150°C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
.064 ohm
72 A
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