Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPB03N60S5ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V;
AVALANCHE RATED
100 mJ
SINGLE WITH BUILT-IN DIODE
600 V
3.2 A
1.4 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
5.7 A
Not Qualified
YES
GULL WING
SINGLE
SILICON
SPB04N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-263AB; Terminal Finish: TIN;
130 mJ
4.5 A
.95 ohm
e3
9 A
TIN
SPB02N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 3.2 A;
50 mJ
1.8 A
3 ohm
SWITCHING
BSO615NGHUMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
2.6 A
.15 ohm
R-PDSO-G8
3
8
10.4 A
DUAL
IPB60R520CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 17 A;
166 mJ
DRAIN
6.8 A
.52 ohm
17 A
IPB60R600CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 15 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;
144 mJ
6.1 A
.6 ohm
15 A
SPD02N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 50 mJ; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED;
500 V
TO-252AA
5.4 A
SPD08N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 10; Maximum Pulsed Drain Current (IDM): 22.8 A;
AVALANCHE RATED, HIGH VOLTAGE
230 mJ
7.6 A
260
22.8 A
10
SPD02N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPD03N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
9.6 A
SPD04N60S5BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Additional Features: AVALANCHE RATED, HIGH VOLTAGE; Package Shape: RECTANGULAR;
SPD03N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPD01N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .8 A;
20 mJ
.8 A
6 ohm
1.6 A
SPD06N60C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 1; Package Shape: RECTANGULAR;
HIGH VOLTAGE
200 mJ
6.2 A
.75 ohm
18.6 A
IPD90R1K2C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
68 mJ
900 V
5.1 A
1.2 ohm
10 A
BSP372L6327HTSA1
Infineon's BSP372L6327HTSA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage and 6.8A IDM. Ideal for power applications, it features a built-in diode, 0.31 ohm RDS(on), and 45mJ EAS rating. Suitable for surface mount designs in enhancement mode operation up to 150°C.
45 mJ
100 V
1.7 A
.31 ohm
R-PDSO-G4
4
BSP296L6433HTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
LOGIC LEVEL COMPATIBLE
1.1 A
.7 ohm
4.4 A
BSO615CGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
47 mJ
3.1 A
.11 ohm
N-CHANNEL AND P-CHANNEL
12.4 A
BUZ32H3045AATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
120 mJ
200 V
9.5 A
.4 ohm
TO-263AA
38 A
BSO207PHXUMA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Maximum Drain-Source On Resistance: .045 ohm; Terminal Position: DUAL;
44 mJ
20 V
5 A
.045 ohm
P-CHANNEL
BSO330N02KGFUMA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: GULL WING;
19 mJ
4.2 A
.03 ohm
26 A
BUZ30AH3045AATMA1
Infineon's BUZ30AH3045AATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, 84A IDM, and 0.13 ohm RDS. Ideal for power applications in small outline packages, it operates in enhancement mode with 150°C max temp.
450 mJ
21 A
.13 ohm
84 A
BSZ076N06NS3GATMA1
Infineon BSZ076N06NS3GATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 80A max pulsed drain current, 0.0076 ohm max RDS(on), and 118mJ avalanche energy rating. Suitable for enhancement mode operation in high temperature environments up to 150°C.
118 mJ
14 A
.0076 ohm
S-PDSO-N8
SQUARE
80 A
NO LEAD
SPD04N50C3BTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 130 mJ; JEDEC-95 Code: TO-252; Maximum Drain-Source On Resistance: .95 ohm;
TO-252
13.5 A
BSZ120P03NS3EGATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ESD PROTECTED; Terminal Finish: TIN; Terminal Position: DUAL;
ESD PROTECTED
73 mJ
30 V
11 A
.02 ohm
160 A
IPB65R190CFDATMA1
Infineon's IPB65R190CFDATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(on). Operating from -55 to 150 °C, it has GULL WING terminals in a RECTANGULAR package.
484 mJ
650 V
17.5 A
.19 ohm
-55 Cel
57.2 A
Tin (Sn)
IPB65R190C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 650 V; Terminal Form: GULL WING; Case Connection: DRAIN;
485 mJ
66 A
BSO200P03SHXUMA1
Infineon's BSO200P03SHXUMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 36.4A IDM. Ideal for power applications, it features a built-in diode, 0.02 ohm RDS(on), and 98mJ EAS rating. Suitable for enhancement mode operation in various electronic devices due to its small outline package and GULL WING terminals.
98 mJ
7.4 A
36.4 A
BSO203SPHXUMA1
Infineon BSO203SPHXUMA1 is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35.6A IDM, and 0.021 ohm RDS(on). Ideal for power management applications due to its small outline package style and high drain current capability. Operating in enhancement mode, it offers efficient performance in various electronic devices.
97 mJ
.021 ohm
35.6 A
BSO080P03NS3EGXUMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 149 mJ; Moisture Sensitivity Level (MSL): 3;
149 mJ
9.8 A
.008 ohm
48 A
IPB50R140CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 56 A; Transistor Element Material: SILICON; Terminal Form: GULL WING;
616 mJ
23 A
.14 ohm
56 A
30
IPB50R199CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 500 V; Package Body Material: PLASTIC/EPOXY;
436 mJ
.199 ohm
40 A
IPB50R250CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 500 V; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): SMALL OUTLINE;
345 mJ
13 A
.25 ohm
31 A
IPB60R199CPAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Drain Current (ID): 16 A; Avalanche Energy Rating (EAS): 436 mJ;
16 A
175 Cel
51 A
Matte Tin (Sn)
IPD035N06L3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: .0035 ohm; Qualification: Not Qualified;
165 mJ
162 A
.0035 ohm
360 A
IPD048N06L3GBTMA1
Infineon's IPD048N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, 90A max drain current, and 0.0048 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
90 A
.0048 ohm
IPD053N06N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .0053 ohm; Maximum Drain Current (ID): 90 A;
.0053 ohm
IPD068N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 130 mJ;
.0068 ohm
IPD068P03L3GBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .0068 ohm;
70 A
280 A
IPD079N06L3GBTMA1
Infineon's IPD079N06L3GBTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 200A IDM, 43mJ EAS, and 0.0079 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a small outline package.
43 mJ
50 A
.0079 ohm
200 A
IPD088N06N3GBTMA1
Infineon Technologies' IPD088N06N3GBTMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 60V, max pulsed drain current of 200A, and low on-resistance of 0.0088 ohm. This transistor is suitable for switching applications in various industries.
.0088 ohm
IPD096N08N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 90 mJ; Case Connection: DRAIN;
90 mJ
80 V
73 A
.0096 ohm
292 A
IPD110N12N3GBUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 136 W; No. of Terminals: 2; Avalanche Energy Rating (EAS): 120 mJ;
120 V
75 A
.011 ohm
136 W
300 A
IPD122N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
70 mJ
59 A
.0122 ohm
236 A
IPD135N08N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE;
45 A
.0135 ohm
180 A
IPD144N06NGBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 240 mJ; JESD-30 Code: R-PSSO-G2;
240 mJ
.0144 ohm
IPD180N10N3GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING; No. of Elements: 1;
43 A
.018 ohm
172 A
IPD220N06L3GBTMA1
IPD220N06L3GBTMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 120A IDM, and 0.022 ohm RDS(on). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for high-power switching in various electronic devices.
13 mJ
30 A
.022 ohm
120 A
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