Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BLF3G21-6,135
NXP Semiconductors
BLF3G21-6,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.3 A and operates up to 200 °C, making it ideal for high-performance applications in electronics. Its surface mount configuration ensures easy integration into compact designs.
SINGLE
2.3 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
200 Cel
N-CHANNEL
FET General Purpose Power
YES
BLF1043,135
BLF1043,135 by NXP Semiconductors is an N-channel enhancement mode FET designed for efficient power management. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for high-temperature applications in electronics. This surface-mount transistor excels in power amplification and switching tasks.
2.2 A
FET General Purpose Powers
VNB20N07-E
STMicroelectronics
VNB20N07-E by STMicroelectronics is an N-CHANNEL Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm RDS(on). Ideal for applications requiring fast switching, it features a max turn on time of 580ns and turn off time of 1100ns.
COMPLEX
.07 ohm
TO-263
R-PSSO-G2
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
83 W
GULL WING
SILICON
1100 ns
580 ns
SSM5H12TU(TE85L,F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 1.9 A;
1.9 A
125 Cel
.8 W
EFC6602R-A-TR
Onsemi
EFC6602R-A-TR by Onsemi is an N-channel Power FET with 18A max drain current and 2W max power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150 °C. With surface mount capability, it suits various electronic designs needing reliable performance.
18 A
150 Cel
260
2 W
30
IRFH7921TR2PBF
International Rectifier
IRFH7921TR2PBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.1W. This surface mount transistor has a package style of SMALL OUTLINE and can handle temperatures from -55 to 150°C.
29 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
34 A
15 A
.0085 ohm
120 pF
R-PDSO-F5
5
-55 Cel
3.1 W
120 A
FLAT
DUAL
SWITCHING
BLF8G20LS-400PVQ
N-CHANNEL; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel;
225 Cel
AOD2N100
Alpha & Omega Semiconductor
AOD2N100 by Alpha & Omega Semiconductor is a single N-channel power FET with 2A max drain current and 83W max power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power supplies and motor control systems.
2 A
NVMFD5853NT1G
NVMFD5853NT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as power supplies and motor control systems.
53 A
e3
175 Cel
58 W
MATTE TIN
NVMFD5853NWFT1G
NVMFD5853NWFT1G by Onsemi is an N-CHANNEL Power FET with 53A max drain current and 58W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as motor control and power supplies.
TIN
NTTFS4965NFTWG
NTTFS4965NFTWG by Onsemi is a single N-channel Power FET with 64A max drain current and 22.73W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as automotive electronics and industrial control systems.
64 A
22.73 W
NTMFS4965NFT3G
NTMFS4965NFT3G by Onsemi is a N-CHANNEL FET with 65A max drain current and 22.73W power dissipation. Ideal for power applications, it operates in enhancement mode with a max temp of 150 °C. Suitable for surface mount configurations, this MOSFET is widely used in high-power electronic devices.
65 A
NTLLD4951NFTWG
NTLLD4951NFTWG by Onsemi is an N-CHANNEL Power FET with 13A max drain current and 3.2W max power dissipation. Ideal for applications requiring high power efficiency in a compact form factor, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with surface mount capability for easy integration.
13 A
3.2 W
PMZ290UNYL
PMZ290UNYL by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 1 A, power dissipation of 2.7 W, and operates up to 150 °C. Its surface mount design enhances versatility in circuit integration.
1 A
2.7 W
NTMFS4C09NT1G-001
NTMFS4C09NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 150 °C. Suitable for surface mount configurations, this MOSFET is commonly used in power management systems.
52 A
25.5 W
BLC6G22LS-75,112
BLC6G22LS-75,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and operates up to 150 °C, making it ideal for high-performance power applications in compact designs.
BLF404,115
NXP Semiconductors BLF404,115 is a single N-CHANNEL FET with 1.5A max drain current and 8.3W power dissipation. Ideal for applications requiring high-power amplification in enhancement mode operation up to 200°C, utilizing metal-oxide semiconductor technology for efficient performance.
1.5 A
8.3 W
BUK1M200-50SDLD,51
BUK1M200-50SDLD,51 from NXP Semiconductors is an N-channel power FET ideal for efficient switching applications. It supports a max drain current of 1.7 A and power dissipation of 9.4 W, operating up to 150 °C. This MOSFET is perfect for compact electronic designs requiring reliable performance.
1.7 A
9.4 W
BUK7619-100B,118
BUK7619-100B,118 from NXP is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 64 A and power dissipation of 200 W, operating up to 175 °C. Perfect for efficient switching in power management systems.
245
200 W
BUK763R4-30B,118
BUK763R4-30B,118 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.
75 A
255 W
PHD18NQ10T,118
PHD18NQ10T,118 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and power dissipation of 79 W, making it ideal for high-efficiency power applications. With an operating temp up to 175 °C, it's perfect for demanding environments.
79 W
SFT1443-TL-W
The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
9 A
e6
19 W
TIN BISMUTH
BUK7Y9R9-80E/CX
BUK7Y9R9-80E/CX from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 89 A, power dissipation up to 195 W, and operates at temperatures up to 175 °C, ideal for high-performance applications.
89 A
195 W
NTMKB4895NT1G
The Onsemi NTMKB4895NT1G is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features 0.006 ohm Drain-Source Resistance and 80mJ EAS rating. This ENHANCEMENT MODE transistor in CHIP CARRIER package is suitable for high-power circuit designs.
80 mJ
.006 ohm
R-XBCC-N2
UNSPECIFIED
CHIP CARRIER
NOT SPECIFIED
Not Qualified
NO LEAD
BOTTOM
NTMKE4891NT1G
NTMKE4891NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 210A IDM and 0.0026 ohm RDS(ON), suitable for high-power operations. With METAL-OXIDE SEMICONDUCTOR technology and SILICON material, it offers efficient performance in ENHANCEMENT MODE operation.
184 mJ
25 V
26.7 A
.0026 ohm
R-XBCC-N3
3
210 A
RSD050N06TL
ROHM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
60 V
5 A
.14 ohm
e2
15 W
TIN COPPER
10
RSD150N06TL
ROHM RSD150N06TL is a N-CHANNEL FET with 60V DS breakdown voltage, 15A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 20W.
.051 ohm
20 W
30 A
FDD14AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD14AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 55mJ and can handle up to 125W power dissipation at temperatures ranging from -55°C to 175°C.
55 mJ
9.5 A
.0116 ohm
TO-252AA
125 W
AEC-Q101
NTMD5838NLR2G
NTMD5838NLR2G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 35A IDM, and 0.0308 ohm RDS(on). It is used in applications requiring high power dissipation up to 3W, such as power management systems and motor control circuits.
20 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
8.9 A
7.4 A
.0308 ohm
R-PDSO-G8
8
3 W
35 A
NTMFS5832NLT1G
NTMFS5832NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 443A pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in small outline packages.
134 mJ
111 A
20 A
.0065 ohm
96 W
443 A
NVMFD5877NLT1G
NVMFD5877NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS. It's used for SWITCHING applications due to its 2 ELEMENTS WITH BUILT-IN DIODE configuration. Operating at 175°C max temp, it's ideal for high-power requirements in various electronic devices.
10.5 mJ
17 A
6 A
.06 ohm
R-PDSO-F6
6
23 W
74 A
NVMFD5877NLT3G
NVMFD5877NLT3G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Pulsed Drain Current, 10.5mJ Avalanche Energy Rating, and 0.06ohm Max Drain-Source Resistance. This METAL-OXIDE SEMICONDUCTOR FET operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power switching circuits.
NP160N04TUJ-E1-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .002 ohm;
160 A
.002 ohm
R-PSSO-G6
250 W
640 A
NP80N04PLG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Peak Reflow Temperature (C): NOT SPECIFIED; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
80 A
.0045 ohm
TO-263AB
115 W
300 A
NP80N04PUG-E1B-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 80 A;
NP80N06PLG-E1B-AY
NP80N06PLG-E1B-AY by Renesas Electronics is a N-channel FET with 60V DS breakdown voltage and 180A IDM. Ideal for switching applications, it features 0.0083 ohm max RDS(on) and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation up to 175°C.
.0083 ohm
180 A
NP90N04VUG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; JEDEC-95 Code: TO-252; Transistor Element Material: SILICON;
90 A
.004 ohm
TO-252
105 W
NP90N06VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
.0078 ohm
CSD16323Q3C
Texas Instruments
CSD16323Q3C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0072 ohm Drain-Source On Resistance.
AVALANCHE RATED
125 mJ
60 A
21 A
.0072 ohm
R-PDSO-N8
112 A
CSD17506Q5A
CSD17506Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 150A IDM, and 0.0053 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
259 mJ
100 A
23 A
.0053 ohm
65 pF
150 A
NP180N055TUJ-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 348 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
55 V
.0023 ohm
348 W
720 A
NP90N03VHG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 360 A;
.0032 ohm
360 A
NP90N03VLG-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 90 A; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SIA444DJT-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIA444DJT-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 12A max Drain Current and 0.017 ohm max On Resistance. This MOSFET operates in enhancement mode at up to 150°C, making it suitable for high-power applications.
12 A
.017 ohm
S-PDSO-N3
SQUARE
40 A
SIS478DN-T1-GE3
Vishay Intertechnology's SIS478DN-T1-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage. Ideal for switching applications, it features 40A IDM and 0.02 ohm RDS(on). With a max power dissipation of 15.6W and operating temperature up to 150°C, this MOSFET is suitable for various high-power electronic designs.
5 mJ
.02 ohm
S-PDSO-C5
15.6 W
Matte Tin (Sn)
C BEND
40
SQM120N03-1M5L_GE3
Vishay Intertechnology's SQM120N03-1M5L_GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A ID. Ideal for applications requiring high pulsed drain current up to 480A, such as power management systems. Features include built-in diode, 0.0015 ohm RDS(on), and EAS of 336mJ for robust performance in enhancement mode operation.
336 mJ
.0015 ohm
480 A
FQD3P50TM_F085
FQD3P50TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 8.4A and EAS of 250mJ, operating in ENHANCEMENT MODE at up to 150°C.
250 mJ
500 V
2.1 A
4.9 ohm
P-CHANNEL
50 W
8.4 A
Other Transistors
NP180N04TUJ-E1-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSSO-G6;
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