Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STH110N10F7-6
STMicroelectronics
STH110N10F7-6 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount designs, this MOSFET offers efficient power management in various electronic systems.
SINGLE
110 A
METAL-OXIDE SEMICONDUCTOR
1
175 Cel
NOT SPECIFIED
N-CHANNEL
150 W
FET General Purpose Power
YES
STH270N8F7-2
STH270N8F7-2 by STMicroelectronics is a N-channel Power FET with 80V DS breakdown voltage, 180A max drain current, and 0.0021 ohm RDS(on). It is used for switching applications in enhancement mode with 720A pulsed drain current.
ULTRA LOW RESISTANCE
1160 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
80 V
180 A
.0021 ohm
R-PSSO-G2
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
315 W
720 A
FET General Purpose Powers
GULL WING
SWITCHING
SILICON
STL20DN10F7
STL20DN10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features 20A max drain current, 0.067 ohm RDS(on), and operates in the -55 to 150 °C temperature range. Suitable for high-power switching circuits requiring efficient performance.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
100 V
20 A
12.3 A
.067 ohm
R-PDSO-F6
6
150 Cel
-55 Cel
62.5 W
FLAT
DUAL
STL51N3LLH5
STL51N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 51A max drain current and 62.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
51 A
UPA2630T1R-E2-AX
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
7 A
e4
260
P-CHANNEL
2.5 W
Other Transistors
NICKEL PALLADIUM GOLD
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
6 A
NVD3055-150T4G
Onsemi
NVD3055-150T4G by Onsemi is a N-channel FET with 60V DS breakdown voltage, 27A pulsed drain current, and 30mJ avalanche energy rating. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 28.8W at 175 °C.
30 mJ
60 V
9 A
.15 ohm
40 pF
e3
28.8 W
27 A
AEC-Q101
MATTE TIN
30
75 ns
105 ns
DMG4406LSS-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: HIGH RELIABILITY; Terminal Position: DUAL;
HIGH RELIABILITY
30 V
10.3 A
9.3 A
.011 ohm
R-PDSO-G8
8
2 W
90 A
STD80N6F6
STD80N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 120W max power dissipation. Utilizes metal-oxide semiconductor technology, suitable for high-power applications in surface mount configurations. Operating temperature up to 175°C makes it ideal for industrial use.
80 A
120 W
STL40N75LF3
STL40N75LF3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 160A IDM, and 0.022 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with DUAL terminals.
75 V
40 A
.022 ohm
R-PDSO-F5
5
62 W
160 A
IPD600N25N3GBTMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 210 mJ; Transistor Application: SWITCHING; Terminal Form: GULL WING;
210 mJ
250 V
25 A
.06 ohm
TO-252AA
100 A
2SK3510-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 83 A;
83 A
125 W
RSS050P03FU6TB
ROHM
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
5 A
10
DMN2028UFDH-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 6.8 A;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
6.8 A
.036 ohm
R-PDSO-N8
1.5 W
NO LEAD
NTDV5804NT4G
NTDV5804NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 125A Max Pulsed Drain Current, and 0.0075 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and high current handling capabilities.
195 mJ
40 V
69 A
.0075 ohm
71 W
125 A
NVD4805NT4G
NVD4805NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 175A Max Pulsed Drain Current, and 0.0074 ohm Max RDS(on). Ideal for high-power switching circuits in automotive and industrial electronics due to its AEC-Q101 compliance.
288 mJ
95 A
12.7 A
.0074 ohm
79 W
175 A
TIN
STDLED656
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
650 V
1.3 ohm
TO-252
30 W
24 A
STH270N4F3-2
STH270N4F3-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID, 300W power dissipation, and operates up to 175°C. Ideal for high-power applications requiring efficient switching capabilities in surface-mount configurations.
300 W
NDD60N360U1T4G
NDD60N360U1T4G by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS. Ideal for power applications, it operates in Enhancement Mode with 114W Power Dissipation and 150 °C Max Temp.
64 mJ
600 V
11 A
.36 ohm
114 W
44 A
NTMFD4C20NT1G
NTMFD4C20NT1G by Onsemi is an N-CHANNEL Power FET with 27.4A max drain current and 4.6W max power dissipation. Ideal for applications requiring high power handling in a compact form factor, such as power supplies and motor control systems. Operating temperature up to 150°C ensures reliable performance in demanding environments.
27.4 A
4.6 W
Matte Tin (Sn) - annealed
NDT02N40T1G
Onsemi's NDT02N40T1G is a Power FET with 400V DS Breakdown Voltage, 1.6A IDM, and 0.0055 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for power management applications requiring high efficiency and low power dissipation.
120 mJ
400 V
.4 A
.0055 ohm
TO-261AA
R-PDSO-G4
4
1.6 A
NTBV75N06T4G
NTBV75N06T4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 225A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
844 mJ
75 A
.0095 ohm
214 W
225 A
NVD3055-094T4G
NVD3055-094T4G by Onsemi is an N-channel Power FET with a 60V DS breakdown voltage and 45A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.094 ohm max drain-source resistance, and operates in enhancement mode.
61 mJ
12 A
.094 ohm
48 W
45 A
NVMFD5852NLWFT1G
NVMFD5852NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, 329A IDM, and 0.012 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.
80 mJ
15 A
.012 ohm
27 W
329 A
NVMFD5853NLWFT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 24 W; Maximum Operating Temperature: 175 Cel; Package Style (Meter): SMALL OUTLINE;
40 mJ
34 A
.015 ohm
24 W
165 A
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 190A IDM, and 0.013 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
58 A
10 A
.013 ohm
107 W
190 A
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 74A IDM, and 0.06 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
17 A
23 W
74 A
NVMFD5877NLWFT3G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
DMC4028SSDQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.16 W; Package Shape: RECTANGULAR; No. of Elements: 2;
7.2 A
5.4 A
.028 ohm
N-CHANNEL AND P-CHANNEL
2.16 W
27.3 A
STH360N4F6-2
STH360N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates at up to 175 °C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
RS1E130GNTB
ROHM RS1E130GNTB is a N-CHANNEL FET with 30V DS Breakdown Voltage and 13A ID. Ideal for SWITCHING applications, it features a built-in diode, 0.0152 ohm RDS(on), and 52A IDM. Suitable for surface mount with small outline package style.
13 A
.0152 ohm
52 A
UPA2600T1R-E2-AX
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain-Source On Resistance: .0191 ohm;
.0191 ohm
2.4 W
UPA2660T1R-E2-AX
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: NICKEL PALLADIUM GOLD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4 A
.062 ohm
2.3 W
UPA2690T1R-E2-AX
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 4 A; JESD-609 Code: e4;
UPA2739T1A-E2-AY
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 160 mJ; Package Style (Meter): SMALL OUTLINE;
160 mJ
85 A
.0028 ohm
83 W
UPA2764T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; No. of Elements: 1;
130 A
UPA2765T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA2766T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; JESD-609 Code: e3;
.00088 ohm
SPB07N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 230 mJ; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
230 mJ
7.3 A
.6 ohm
TO-263AB
21.9 A
Not Qualified
SPB12N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY;
340 mJ
500 V
11.6 A
.38 ohm
34.8 A
SPB16N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; JESD-30 Code: R-PSSO-G2; Terminal Form: GULL WING;
460 mJ
16 A
.28 ohm
48 A
SPB04N50C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 13.5 A; Moisture Sensitivity Level (MSL): 1;
130 mJ
4.5 A
.95 ohm
13.5 A
SPB11N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 11 A; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
22 A
SPB07N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified;
14.6 A
SPB20N60S5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 40 A; Terminal Form: GULL WING; No. of Elements: 1;
690 mJ
.19 ohm
SPB03N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 1.4 ohm; Maximum Pulsed Drain Current (IDM): 9.6 A; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, HIGH VOLTAGE
100 mJ
3.2 A
1.4 ohm
9.6 A
SPB02N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Form: GULL WING; Transistor Application: SWITCHING;
50 mJ
1.8 A
3 ohm
SPB04N60C3ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; JEDEC-95 Code: TO-263AB;
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