Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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AO3414L
Alpha & Omega Semiconductor
AO3414L by Alpha & Omega Semiconductor is an N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 0.05 ohm RDS(on), and ENHANCEMENT MODE operation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount designs.
SINGLE WITH BUILT-IN DIODE
20 V
4.2 A
.05 ohm
METAL-OXIDE SEMICONDUCTOR
TO-236
R-PDSO-G3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
30 A
YES
GULL WING
DUAL
SWITCHING
SILICON
STH320N4F6-2
STMicroelectronics
STH320N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 200A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
SINGLE
200 A
175 Cel
300 W
FET General Purpose Powers
STL11N4LLF5
STL11N4LLF5 by STMicroelectronics is a N-CHANNEL FET with 40V DS breakdown voltage, 44A IDM, and 0.012 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 50W power dissipation. The transistor features a built-in diode, small outline package style, and can withstand temperatures up to 150 °C.
DRAIN
40 V
11 A
.012 ohm
S-PDSO-N8
8
150 Cel
SQUARE
50 W
44 A
NO LEAD
BSP299H6327XUSA1
Infineon Technologies
Infineon's BSP299H6327XUSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, 1.6A IDM, and 130mJ EAS. Ideal for power applications in automotive (AEC-Q101) and industrial sectors due to its small outline package, built-in diode, and low on-resistance of 4 ohm.
AVALANCHE RATED
130 mJ
500 V
.4 A
4 ohm
R-PDSO-G4
e3
4
260
1.6 A
AEC-Q101
TIN
40
NVF2955PT1G
Onsemi
NVF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A IDM, 225mJ EAS, and 0.185 ohm Drain-Source Resistance. With ENHANCEMENT MODE operation and AEC-Q101 standard compliance, it offers reliable performance in automotive electronics.
225 mJ
60 V
1.7 A
.185 ohm
TO-261AA
P-CHANNEL
17 A
Tin (Sn)
30
BSP123L6327HTSA1
Infineon's BSP123L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for automotive applications (AEC-Q101). Features include 1.48A max pulsed drain current, 6Ω max on resistance, and built-in diode in a small outline package.
LOGIC LEVEL COMPATIBLE
100 V
.37 A
6 ohm
1.48 A
MATTE TIN
BSP300H6327XUSA1
Infineon's BSP300H6327XUSA1 is a N-CHANNEL FET with 800V DS Breakdown Voltage, 0.76A IDM, and 20 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include built-in diode, small outline package style, and metal-oxide semiconductor technology.
36 mJ
800 V
.19 A
20 ohm
.76 A
BSP373L6327HTSA1
Infineon's BSP373L6327HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage and 6.8A IDM, suitable for power applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.8W. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.
45 mJ
.3 ohm
105 pF
-55 Cel
1.8 W
6.8 A
195 ns
60 ns
BSP603S2LHUMA1
Infineon's BSP603S2LHUMA1 is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for automotive applications. Featuring 21A IDM and 0.04 ohm RDS(on), this MOSFET in PLASTIC/EPOXY package offers high performance in small outline design. Enhanced mode operation and built-in diode make it suitable for various power management needs.
55 V
5.2 A
.04 ohm
21 A
DMP1018UCB9-7
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Terminal Finish: TIN SILVER COPPER;
12 V
7.6 A
5.5 A
.022 ohm
120 pF
S-PBGA-B9
e1
9
GRID ARRAY
60 A
Other Transistors
TIN SILVER COPPER
BALL
BOTTOM
BSP295L6327HTSA1
Infineon's BSP295L6327HTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 7.2A IDM, 0.5 ohm RDS(on), and AEC-Q101 compliance, suitable for automotive applications. The transistor has a built-in diode, operates in enhancement mode, and comes in a small outline package with gull wing terminals.
1.8 A
.5 ohm
7.2 A
BSP316PL6327HTSA1
Infineon's BSP316PL6327HTSA1 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 2.72A IDM, and 1.8Ω RDS(on). Ideal for power management applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals.
.68 A
1.8 ohm
2.72 A
Matte Tin (Sn)
BSP296L6327HTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.1 A; Case Connection: DRAIN;
1.1 A
.7 ohm
4.4 A
BSP298H6327XUSA1
Infineon's BSP298H6327XUSA1 is a N-CHANNEL FET with 400V DS breakdown voltage, ideal for power applications. Featuring a built-in diode, it has 2A max pulsed drain current and 130mJ avalanche energy rating. This MOSFET in small outline package is suitable for automotive and industrial uses.
400 V
.5 A
3 ohm
2 A
SIHB23N60E-GE3
Vishay Intertechnology
SIHB23N60E-GE3 by Vishay Intertechnology is a N-channel Power FET with 600V DS breakdown voltage, 23A max drain current, and 0.158 ohm max on-resistance. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode.
353 mJ
600 V
23 A
.158 ohm
TO-263AB
R-PSSO-G2
2
63 A
SIHB33N60ET1-GE3
SIHB33N60ET1-GE3 by Vishay Intertechnology is a power FET with N-channel polarity. It has a min DS breakdown voltage of 600V and can handle a max pulsed drain current of 88A. This transistor is commonly used for switching applications due to its high performance and small outline package style.
793 mJ
33 A
.099 ohm
88 A
2SK3820-DL-1E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
26 A
NVMFS4841NWFT1G
NVMFS4841NWFT1G by Onsemi is a single N-channel Power FET with 89A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
89 A
112 W
FET General Purpose Power
NVMFS5826NLWFT1G
NVMFS5826NLWFT1G by Onsemi is a N-CHANNEL FET with 26A max drain current and 39W power dissipation. Ideal for power management applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration and matte tin finish, it offers efficient performance in various electronic devices.
39 W
NVMFS5826NLWFT3G
NVMFS5826NLWFT3G by Onsemi is a single N-channel Power FET with 26A max drain current and 39W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 175 °C makes it suitable for demanding environments.
NVMFS5830NLWFT1G
NVMFS5830NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). It's used in power applications due to its 158W Power Dissipation, 1012A IDM, and 361mJ EAS rating. Ideal for automotive industry with AEC-Q101 standard compliance.
361 mJ
185 A
.0036 ohm
R-PDSO-F5
5
158 W
1012 A
Matte Tin (Sn) - annealed
FLAT
NVMFS5830NLWFT3G
NVMFS5830NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5832NLWFT1G
NVMFS5832NLWFT1G by Onsemi is a single N-channel Power FET with 120A max drain current and 127W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features metal-oxide semiconductor technology. Suitable for surface mount assembly with matte tin finish, it offers reliable performance in demanding environments.
120 A
127 W
NVMFS5834NLWFT1G
NVMFS5834NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
48 mJ
75 A
14 A
.0136 ohm
107 W
276 A
NVMFS5834NLWFT3G
NVMFS5834NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5844NLWFT1G
NVMFS5844NLWFT1G by Onsemi is a N-CHANNEL FET with 61A max drain current and 107W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation.
61 A
NVMFS5844NLWFT3G
NVMFS5844NLWFT3G by Onsemi is a single N-channel power FET with 61A max drain current and 107W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface-mount configurations.
NVMFS5885NLWFT1G
NVMFS5885NLWFT1G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration in various power systems.
39 A
54 W
NVMFS5885NLWFT3G
NVMFS5885NLWFT3G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for power applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration, it offers efficient performance in various electronic devices.
NVTFS4823NWFTAG
NVTFS4823NWFTAG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
21 W
NVTFS4823NWFTWG
NVTFS4823NWFTWG by Onsemi is a single N-channel Power FET with 30A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems or industrial equipment.
NVTFS4824NWFTAG
NVTFS4824NWFTAG by Onsemi is a single N-channel Power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
46 A
NVTFS4824NWFTWG
NVTFS4824NWFTWG by Onsemi is a single N-channel power FET with 46A max drain current and 21W max power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive systems and industrial controls.
NVTFS5124PLWFTWG
NVTFS5124PLWFTWG by Onsemi is a P-CHANNEL power FET with a max drain current of 6A and max power dissipation of 18W. It is suitable for applications requiring high power handling in surface mount configurations, such as automotive electronics or industrial control systems.
6 A
18 W
NVTFS5811NLWFTWG
NVTFS5811NLWFTWG by Onsemi is a N-CHANNEL FET with 40A max drain current and 21W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration into various electronic systems.
40 A
NVTFS5820NLWFTAG
NVTFS5820NLWFTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 247A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
.0115 ohm
S-PDSO-F5
247 A
NVTFS5820NLWFTWG
NVTFS5820NLWFTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 0.0115 ohm RDS(on), and 247A IDM. Ideal for automotive applications due to AEC-Q101 compliance, it features an N-CHANNEL configuration with built-in diode in a small outline package.
NVTFS5826NLWFTWG
NVTFS5826NLWFTWG by Onsemi is a single N-channel Power FET with 20A max drain current and 22W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface mount configurations.
20 A
22 W
R6004ENJTL
ROHM
ROHM R6004ENJTL is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 8A max pulsed drain current, 0.98 ohm max drain-source resistance, and 46mJ avalanche energy rating. Suitable for enhancement mode operation in surface mount configurations.
46 mJ
4 A
.98 ohm
e2
8 A
TIN COPPER
10
RDD023N50TL
ROHM RDD023N50TL is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 8A max pulsed drain current and 5.5 ohm max drain-source resistance. The transistor operates in enhancement mode and has a built-in diode, suitable for surface mount configurations.
21 mJ
5.5 ohm
IPD60R600P6
Infineon's IPD60R600P6 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 18A IDM, 0.6 ohm RDS(on), and 133mJ EAS rating. Its GULL WING terminals and ENHANCEMENT MODE operation make it suitable for surface mount designs.
133 mJ
7.3 A
.6 ohm
TO-252
18 A
ECH8672-TL-H
ECH8672-TL-H by Onsemi is a P-CHANNEL FET with 3.5A max drain current and 1.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as power management systems in automotive or industrial settings.
3.5 A
e6
1.5 W
TIN BISMUTH
EMH2411R-TL-H
EMH2411R-TL-H by Onsemi is a N-CHANNEL FET with 5A max drain current and 1.4W power dissipation. Ideal for applications requiring high efficiency in power management systems, it operates at up to 150 °C with surface mount capability.
5 A
1.4 W
CSD15571Q2
Texas Instruments
CSD15571Q2 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a Max Pulsed Drain Current of 52A, Min DS Breakdown Voltage of 20V, and Max Drain Current of 22A. With an Operating Temperature range from -55 to 150 °C, it offers high performance in a SMALL OUTLINE package suitable for various electronic devices.
18 mJ
22 A
10 A
.0192 ohm
42 pF
S-PDSO-N6
e4
6
2.5 W
52 A
NICKEL PALLADIUM GOLD
SIR670DP-T1-GE3
Vishay Intertechnology's SIR670DP-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage and 200A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm max RDS(on), and 31.2mJ EAS rating in a small outline package.
31.2 mJ
.0048 ohm
R-PDSO-C5
C BEND
NVMFD5489NLT1G
NVMFD5489NLT1G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes Metal-Oxide Semiconductor tech, operates up to 175 °C, ideal for high-power applications in surface mount designs.
12 A
23.4 W
NVMFD5489NLT3G
NVMFD5489NLT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount technology for easy installation in various electronic devices.
NVMFD5489NLWFT3G
NVMFD5489NLWFT3G by Onsemi is an N-CHANNEL Power FET with 12A max drain current and 23.4W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C, suitable for surface mount applications in various electronic devices.
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