Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPB80N04S3H4ATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
370 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
80 A
.0048 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263AB
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
320 A
YES
TIN
GULL WING
SINGLE
SILICON
IPB80N06S205ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 320 A;
ULTRA-LOW RESISTANCE
810 mJ
55 V
AEC-Q101
IPB80N06S208ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 320 A;
450 mJ
.0077 ohm
IPB80N06S209ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 80 A; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING;
.0088 ohm
IPB80N06S2L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
LOGIC LEVEL COMPATIBLE
800 mJ
.0057 ohm
MATTE TIN
SWITCHING
IPB80N06S2L06ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Additional Features: LOGIC LEVEL COMPATIBLE; Operating Mode: ENHANCEMENT MODE;
530 mJ
.0084 ohm
IPB80N06S405ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 152 mJ; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;
152 mJ
60 V
IPB80N06S407ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 71 mJ;
71 mJ
.0071 ohm
IPB80N06S4L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0048 ohm; JESD-30 Code: R-PSSO-G2; No. of Elements: 1;
IPB80N06S4L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; No. of Elements: 1;
.0064 ohm
IPB80N08S207ATMA1
IPB80N08S207ATMA1 by Infineon Technologies is a N-CHANNEL FET with 75V DS Breakdown Voltage and 320A IDM. It is used in power applications due to its 0.0071 ohm Drain-Source On Resistance, making it suitable for high current loads. The device features a built-in diode and operates in Enhancement Mode, ideal for efficient power management systems.
75 V
IPB80N08S2L07ATMA1
IPB80N08S2L07ATMA1 by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). It's used in power applications due to its 300W Pdiss, -55 to 175°C operating temp range, and AEC-Q101 standard compliance.
.009 ohm
590 pF
175 Cel
-55 Cel
260
300 W
IPB80P03P405ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 320 A; Case Connection: DRAIN; Peak Reflow Temperature (C): NOT SPECIFIED;
410 mJ
30 V
.0047 ohm
NOT SPECIFIED
P-CHANNEL
Tin (Sn)
IPB80P03P4L04ATMA1
Infineon's IPB80P03P4L04ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 80A ID, and 0.007 ohm RDS(on). Ideal for power applications due to its 320A IDM rating and 410mJ EAS. Features GULL WING terminals in a SMALL OUTLINE package.
.007 ohm
IPB80P03P4L07ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;
135 mJ
.0069 ohm
IPB90N06S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
331 mJ
90 A
.0037 ohm
360 A
IPB90N06S4L04ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A; Operating Mode: ENHANCEMENT MODE;
.0034 ohm
IPD100N06S403ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0035 ohm; No. of Elements: 1; Avalanche Energy Rating (EAS): 300 mJ;
300 mJ
100 A
.0035 ohm
TO-252
400 A
IPD14N06S280ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .08 ohm; Avalanche Energy Rating (EAS): 43 mJ;
43 mJ
17 A
.08 ohm
68 A
IPD15N06S2L64ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Additional Features: ULTRA LOW RESISTANCE; Package Shape: RECTANGULAR;
ULTRA LOW RESISTANCE
19 A
.085 ohm
76 A
IPD25N06S240ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Minimum DS Breakdown Voltage: 55 V; JESD-30 Code: R-PSSO-G2;
80 mJ
29 A
.04 ohm
116 A
IPD30N03S2L10ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Terminal Finish: TIN; Package Style (Meter): SMALL OUTLINE;
150 mJ
30 A
.0146 ohm
120 A
IPD30N06S223ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 150 mJ; Maximum Drain Current (ID): 30 A; Operating Mode: ENHANCEMENT MODE;
.023 ohm
IPD30N06S4L23ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain-Source On Resistance: .023 ohm;
18 mJ
IPD50N06S214ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Reference Standard: AEC-Q101; Transistor Element Material: SILICON;
240 mJ
50 A
.0144 ohm
200 A
IPD50N06S2L13ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 50 A; Terminal Form: GULL WING; Terminal Position: SINGLE;
.0167 ohm
IPD50N06S409ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .009 ohm; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 50 A;
87 mJ
IPD50N06S4L12ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Maximum Drain-Source On Resistance: .012 ohm;
33 mJ
.012 ohm
IPD50P03P4L11ATMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Avalanche Energy Rating (EAS): 100 mJ; No. of Terminals: 2;
100 mJ
.0105 ohm
IPD80P03P4L07ATMA1
Infineon's IPD80P03P4L07ATMA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.0068 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capability and low on-resistance.
.0068 ohm
IPD90N06S404ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; No. of Terminals: 2; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
IPD90N06S407ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;
67 mJ
70 pF
79 W
IPD90N06S4L03ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Maximum Drain Current (ID): 90 A; Additional Features: ULTRA LOW RESISTANCE;
IPD90N06S4L05ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V; Transistor Element Material: SILICON;
.0046 ohm
IPD90N06S4L06ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: ULTRA-LOW RESISTANCE; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 90 A;
.0063 ohm
IPD90P03P4L04ATMA1
IPD90P03P4L04ATMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 360A IDM, and 0.0068 ohm RDS(on). It's used for SWITCHING applications in automotive (AEC-Q101) due to its high current handling capabilities and low on-resistance.
IPP70N04S307AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
145 mJ
82 A
.006 ohm
130 pF
280 A
IPB65R225C7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Avalanche Energy Rating (EAS): 48 mJ; JESD-609 Code: e3;
48 mJ
650 V
11 A
.225 ohm
41 A
SPD30N03S2L07GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Avalanche Energy Rating (EAS): 250 mJ; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
250 mJ
.0098 ohm
SPD30N03S2L10GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-252; Terminal Finish: TIN;
SPD30N03S2L20GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 30 A;
70 mJ
.031 ohm
SPD50N03S207GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
.0073 ohm
TO-252AA
SPD50N03S2L06GBTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 250 mJ; Package Body Material: PLASTIC/EPOXY;
.0092 ohm
BSF035NE2LQXUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 22 A; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 25 V;
50 mJ
25 V
22 A
R-MBCC-N3
e4
3
METAL
CHIP CARRIER
276 A
SILVER NICKEL
NO LEAD
BOTTOM
IPL65R340CFDAUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104.2 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
290 mJ
10.9 A
.34 ohm
S-PSSO-N4
2A
4
150 Cel
-40 Cel
SQUARE
104.2 W
32 A
FQD9N25TM_F080
Fairchild Semiconductor
FQD9N25TM_F080 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 7.4A Max Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a 0.42 ohm Max RDS(on) and 29.6A IDM rating for high-performance requirements.
165 mJ
250 V
7.4 A
.42 ohm
TO-252AB
29.6 A
30
BSO612CVGHUMA1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD SILVER; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
47 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
3 A
.12 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
12 A
NICKEL PALLADIUM GOLD SILVER
DUAL
IPD30N03S2L07ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
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