Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRLR024NTRR
International Rectifier
IRLR024NTRR by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage and 17A Drain Current. Ideal for power applications, it operates in Enhancement Mode with 0.065 ohm On Resistance, offering high efficiency in small outline packages.
LOGIC LEVEL COMPATIBLE
DRAIN
SINGLE
55 V
17 A
.065 ohm
METAL-OXIDE SEMICONDUCTOR
TO-252AA
R-PSSO-G2
e0
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
38 W
45 W
Not Qualified
FET General Purpose Powers
YES
TIN LEAD
GULL WING
SILICON
IRLR2905TRR
IRLR2905TRR by International Rectifier is an N-CHANNEL FET with a 55V DS breakdown voltage and 0.03 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode, 160A IDM, and 210mJ EAS. This MOSFET operates in enhancement mode, has GULL WING terminals, and comes in a small outline package.
ULTRA LOW RESISTANCE, AVALANCHE RATED
210 mJ
SINGLE WITH BUILT-IN DIODE
42 A
.03 ohm
160 A
SWITCHING
IRLZ44NSTRR
IRLZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.025 ohm Drain-Source On Resistance and 210mJ Avalanche Energy Rating.
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
47 A
.025 ohm
TO-263AB
225
30
IRFR6215TR
IRFR6215TR is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 110W and can withstand up to 175°C temperature.
AVALANCHE RATED
310 mJ
150 V
13 A
.295 ohm
240
P-CHANNEL
110 W
44 A
Other Transistors
Tin/Lead (Sn/Pb)
DMP2066LSD-13
Diodes Incorporated
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5.8 A
.04 ohm
R-PDSO-G8
e3
8
150 Cel
260
2 W
20 A
MATTE TIN
DUAL
STB60NE06L-16T4
STMicroelectronics
STB60NE06L-16T4 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
LOW THRESHOLD
400 mJ
60 V
60 A
.016 ohm
150 W
240 A
FET General Purpose Power
BUK204-50Y,118
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
.1 ohm
R-PSSO-G4
4
BUK205-50Y118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Terminal Position: SINGLE; No. of Terminals: 4;
.06 ohm
IRF7413A
IRF7413A by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58A IDM, 260mJ EAS, and 0.0135 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
260 mJ
30 V
11 A
12 A
.0135 ohm
MS-012AA
2.5 W
58 A
VNV35N07
VNV35N07 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.035 ohm Max RDS. It operates in Enhancement Mode, has 10 terminals, and can handle up to 125W power dissipation. Ideal for applications requiring high power handling in compact spaces like automotive electronics.
COMPLEX
.035 ohm
R-PDSO-G10
3
10
250
125 W
1350 ns
800 ns
VNB35N07
VNB35N07 by STMicroelectronics is an N-channel Power FET with 60V DS breakdown voltage, 0.035 ohm RDS(on), and 125W power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and fast switching such as power supplies and motor control systems.
TO-263
STD5N20T4
STD5N20T4 by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.8 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 50W and can handle up to 5A drain current.
130 mJ
200 V
5 A
.8 ohm
50 W
NTD4970NT4G
Onsemi
NTD4970NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 130A and EAS of 18mJ, suitable for high-power operations. With a 0.021 ohm Drain-Source On Resistance, it offers efficient performance in ENHANCEMENT MODE operation at up to 175 °C.
18 mJ
36 A
8.5 A
.021 ohm
24.6 W
130 A
TIN
NTMFS5834NLT1G
NTMFS5834NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 276A pulsed drain current. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies and motor control systems.
48 mJ
40 V
75 A
.0136 ohm
R-PDSO-F5
5
NOT SPECIFIED
107 W
276 A
Tin (Sn)
FLAT
NTTFS4929NTAG
NTTFS4929NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 69A Max Pulsed Drain Current, and 0.017 ohm Max RDS(on). With a small outline package style and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
34 A
10.6 A
.017 ohm
S-PDSO-F5
SQUARE
22.3 W
69 A
Matte Tin (Sn) - annealed
NTTFS5826NLTAG
NTTFS5826NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 133A IDM, and 0.032 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include N-CHANNEL polarity, built-in DIODE, and METAL-OXIDE SEMICONDUCTOR technology.
20 mJ
8 A
.032 ohm
133 A
NTTFS5826NLTWG
NTTFS5826NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 133A IDM, and 0.032 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 175 °C suitable for various electronic devices.
NVD5862NT4G
NVD5862NT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 367A IDM, and 0.0057 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.
205 mJ
98 A
18 A
.0057 ohm
115 W
367 A
NVD5863NLT4G
NVD5863NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 442A IDM, and 0.011 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high current handling capabilities.
320 mJ
82 A
.011 ohm
96 W
442 A
NVD5865NLT4G
NVD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 203A IDM, and 0.019 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
36 mJ
38 A
10 A
.019 ohm
-55 Cel
49 W
203 A
AEC-Q101
NVD5867NLT4G
NVD5867NLT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 85A IDM, and 0.05 ohm RDS(ON). Ideal for power applications due to its 43W Pdiss, 175°C max temp, and built-in diode. Suitable for surface mount designs with GULL WING terminals in a RECTANGULAR package.
22 A
6 A
.05 ohm
43 W
85 A
NVMFS4841NT1G
NVMFS4841NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 336A IDM, and 0.0114 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
180 mJ
89 A
16 A
.0114 ohm
112 W
336 A
NVTFS4823NTAG
NVTFS4823NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for power applications requiring high current handling in a compact form factor. Operating in enhancement mode, it offers efficient performance up to 175°C with a max power dissipation of 21W.
28.8 mJ
30 A
.0175 ohm
21 W
198 A
NVTFS4823NTWG
NVTFS4823NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 198A IDM, and 0.0175 ohm RDS(on). Ideal for applications requiring high drain current handling in enhancement mode operation. Suitable for power management systems due to its high power dissipation of 21W and small outline package style.
NVTFS5811NLTAG
NVTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 354A pulsed drain current. It is used in applications requiring high power dissipation, such as automotive systems and industrial equipment due to its 21W max power dissipation and small outline package style.
65 mJ
40 A
.01 ohm
354 A
NVTFS5811NLTWG
NVTFS5811NLTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 354A IDM, and 0.01 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Enhances performance in electronic devices operating at up to 175 °C.
NVTFS5826NLTAG
NVTFS5826NLTAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
7.6 A
3.2 W
127 A
NVTFS5826NLTWG
NVTFS5826NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 127A IDM, and 0.032 ohm RDS(on). Ideal for applications requiring high power dissipation in a compact form factor. Suitable for use in enhancement mode operation at temperatures up to 175 °C.
STB155N3LH6
STB155N3LH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.004 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W.
ULTRA-LOW RESISTANCE
525 mJ
80 A
.004 ohm
TO-252
245
320 A
MTD6N20ET5G
MTD6N20ET5G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage and 18A IDM. Ideal for SWITCHING applications, it features a 0.7 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and can withstand up to 150 °C operating temperature.
54 mJ
.7 ohm
ZXMN2AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
3.7 A
2.9 A
.12 ohm
R-PDSO-N8
e4
2.45 W
NICKEL PALLADIUM GOLD
NO LEAD
ZXMN3AMCTA
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 150 Cel;
STD30NE06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 60 V;
100 mJ
55 W
120 A
STD30NE06L
STD30NE06L by STMicroelectronics is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has a max ID of 30A and 0.03 ohm Drain-Source On Resistance, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package features an ENHANCEMENT MODE and built-in DIODE, making it ideal for high-current operations.
FDB8860_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB8860_F085 is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 31A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0027 ohm On Resistance, and operates in ENHANCEMENT MODE.
947 mJ
31 A
.0027 ohm
254 W
SIR882DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR882DP-T1-GE3 is a N-channel Power FET with 100V DS breakdown voltage and 80A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0087 ohm max on-resistance, and operates in enhancement mode.
45 mJ
100 V
.0087 ohm
R-XDSO-C5
UNSPECIFIED
83 W
C BEND
CPH6445-TL-W
CPH6445-TL-W by Onsemi is a N-CHANNEL FET with 3.5A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems or motor control circuits.
3.5 A
e6
1.6 W
TIN BISMUTH
SPD18P06P
Infineon Technologies
Infineon's SPD18P06P is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.4A IDM, and 0.13 ohm RDS(on). Ideal for power applications, it operates in Enhancement Mode with 80W Power Dissipation and can handle up to 175°C.
150 mJ
18.6 A
.13 ohm
80 W
74.4 A
DMN3053L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;
4 A
.045 ohm
42 pF
R-PDSO-G3
1.2 W
35 A
IPB180N03S4L01ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;
530 mJ
180 A
.00105 ohm
R-PSSO-G6
6
720 A
ZXMN4A06GQTA
ZXMN4A06GQTA by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 22A max pulsed drain current, and 0.05 ohm max drain-source resistance. Suitable for enhancement mode operation in automotive (AEC-Q101) and military (MIL-STD-202) environments.
60 pF
R-PDSO-G4
AEC-Q101; MIL-STD-202
DMP2006UFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Transistor Application: SWITCHING; No. of Elements: 1;
28 mJ
17.5 A
.0055 ohm
900 pF
S-PDSO-N5
41 W
370 ns
55 ns
DMP2006UFG-7
DMP2006UFG-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 28mJ EAS, and 0.0055 ohm RDS(ON). Operating from -55 to 150 °C, it has a compact SQUARE package with NO LEAD terminals for surface mount assembly.
DMP2033UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 63 pF; Package Style (Meter): SMALL OUTLINE;
4.2 A
63 pF
R-PDSO-G6
1.7 W
DMP3065LVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: .042 ohm; Terminal Form: GULL WING;
.042 ohm
130 pF
MIL-STD-202
75 ns
32 ns
DMP3065LVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Reference Standard: MIL-STD-202; Maximum Operating Temperature: 150 Cel;
NVMFS5833NT1G
NVMFS5833NT1G by Onsemi is a N-CHANNEL FET with 86A ID and 112W power dissipation. Ideal for high-power applications, it operates at up to 175 °C with surface mount configuration. Suitable for various industrial and automotive uses due to its robust metal-oxide semiconductor technology.
86 A
NVMFS5833NT3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 112 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;
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